IXTQ102N20T

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Mfr.Part #
IXTQ102N20T
Manufacturer
Littelfuse
Package / Case
TO-3P-3, SC-65-3
Datasheet
Download
Description
MOSFET N-CH 200V 102A TO3P
Stock
32,129
In Stock :
32,129

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Gate Charge (Qg) (Max) @ Vgs :
114nC @ 10V
Operating Temperature :
-55°C~175°C TJ
Configuration :
SINGLE WITH BUILT-IN DIODE
Rds On (Max) @ Id, Vgs :
23m Ω @ 500mA, 10V
Published :
2008
Additional Feature :
AVALANCHE RATED
Gate to Source Voltage (Vgs) :
30V
Package Shape :
RECTANGULAR
Pin Count :
3
Element Configuration :
Single
Drain to Source Voltage (Vdss) :
200V
Input Capacitance (Ciss) (Max) @ Vds :
6800pF @ 25V
Power Dissipation-Max (Abs) :
750 W
Terminal Finish :
Matte Tin (Sn)
Transistor Application :
SWITCHING
Rise Time :
26ns
Series :
TrenchHV™
Current - Continuous Drain (Id) @ 25°C :
102A Tc
Reach Compliance Code :
Compliant
Pbfree Code :
yes
Avalanche Energy Rating (Eas) :
1200 mJ
Continuous Drain Current (ID) :
102A
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Package / Case :
TO-3P-3, SC-65-3
Terminal Position :
Single
Pulsed Drain Current-Max (IDM) :
250A
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Power Dissipation (Max) :
750W (Tc)
JESD-30 Code :
R-PSFM-T3
Number of Elements :
1
Manufacturer :
IXYS Corporation
Power Dissipation :
750W
Terminal Form :
THROUGH-HOLE
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Drain Current-Max (Abs) (ID) :
102 A
Mount :
Through Hole
RoHS Status :
ROHS3 Compliant
JESD-609 Code :
e3
Supplier Device Package :
TO-3P
Surface Mount :
No
Product Status :
Active
FET Feature :
--
Drain to Source Breakdown Voltage :
200V
Drain-source On Resistance-Max :
0.023 Ω
ECCN Code :
EAR99
Polarity/Channel Type :
N-Channel
FET Type :
N-Channel
Packaging :
Tube
Qualification Status :
Not Qualified
Factory Lead Time :
10 Weeks
Turn-Off Delay Time :
50 ns
Vgs(th) (Max) @ Id :
4.5V @ 1mA
Fall Time (Typ) :
25 ns
DS Breakdown Voltage-Min :
200 V
Transistor Element Material :
SILICON
Operating Mode :
ENHANCEMENT MODE
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Number of Pins :
3
Package :
Tube
Number of Terminals :
3
Power Dissipation-Max :
750W Tc
Case Connection :
DRAIN
Base Product Number :
IXTQ102
Number of Terminations :
3
Mounting Type :
Through Hole
Datasheets
IXTQ102N20T
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTQ102N20T from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~175°C TJ, Package / Case:TO-3P-3, SC-65-3, Number of Pins:3, Number of Terminations:3, Mounting Type:Through Hole, IXTQ102N20T pinout, IXTQ102N20T datasheet PDF, IXTQ102N20T amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTQ102N20T ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTQ102N20T


N-Channel Tube 23m Ω @ 500mA, 10V 6800pF @ 25V 114nC @ 10V 200V TO-3P-3, SC-65-3

IXTQ102N20T Overview


In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 1200 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 6800pF @ 25V.This device conducts a continuous drain current (ID) of 102A, which is the maximum continuous current transistor can conduct.Using VGS=200V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 200V (that is, no charge flow from drain to source).The drain current is the maximum continuous current this device can conduct, which is 102 A.When the device is turned off, a turn-off delay time of 50 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 250A.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 30V.A normal operation of the DS requires keeping the breakdown voltage above 200 V.This transistor requires a drain-source voltage (Vdss) of 200V.

IXTQ102N20T Features


the avalanche energy rating (Eas) is 1200 mJ
a continuous drain current (ID) of 102A
a drain-to-source breakdown voltage of 200V voltage
the turn-off delay time is 50 ns
based on its rated peak drain current 250A.
a 200V drain to source voltage (Vdss)


IXTQ102N20T Applications


There are a lot of IXYS
IXTQ102N20T applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
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