IXTQ140N10P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Minimum Operating Temperature :

- 55 C

Configuration :

Single

Package :

Tube

Surface Mount :

No

Pin Count :

3

Supplier Device Package :

TO-3P

Pbfree Code :

yes

Mounting Style :

Through Hole

Mount :

Through Hole

Drain to Source Voltage (Vdss) :

100V

Power Dissipation-Max :

600W Tc

Length :

15.8 mm

Base Product Number :

IXTQ140

ECCN Code :

EAR99

Product Status :

Active

Avalanche Energy Rating (Eas) :

2500 mJ

Number of Pins :

3

Factory Lead Time :

24 Weeks

Drain to Source Breakdown Voltage :

100V

Reach Compliance Code :

Compliant

Power Dissipation-Max (Abs) :

600 W

Transistor Polarity :

N-Channel

Turn-Off Delay Time :

85 ns

Vgs(th) (Max) @ Id :

5V @ 250μA

Brand :

IXYS

Drive Voltage (Max Rds On,Min Rds On) :

10V

Radiation Hardening :

No

Terminal Form :

THROUGH-HOLE

Polarity/Channel Type :

N-Channel

Gate to Source Voltage (Vgs) :

20V

Power Dissipation :

600W

Width :

4.9 mm

Mounting Type :

Through Hole

Terminal Position :

Single

RoHS Status :

ROHS3 Compliant

Fall Time (Typ) :

26 ns

DS Breakdown Voltage-Min :

100 V

Type :

PolarHT Power MOSFET

FET Feature :

--

Transistor Type :

1 N-Channel

Terminal Finish :

Matte Tin (Sn)

Tradename :

PolarHT

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Channel Mode :

Enhancement

Package / Case :

TO-3P-3, SC-65-3

Operating Mode :

ENHANCEMENT MODE

Height :

20.3 mm

Transistor Application :

SWITCHING

Lead Free :

Lead Free

Drain-source On Resistance-Max :

0.011 Ω

Resistance :

11mOhm

Rise Time :

50ns

Drain Current-Max (Abs) (ID) :

140 A

Number of Channels :

1 Channel

Number of Terminations :

3

FET Type :

N-Channel

JESD-609 Code :

e3

Packaging :

Tube

JESD-30 Code :

R-PSFM-T3

Maximum Operating Temperature :

+ 175 C

Vgs (Max) :

±20V

Current - Continuous Drain (Id) @ 25°C :

140A Tc

Published :

2006

Pulsed Drain Current-Max (IDM) :

300 A

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Transistor Element Material :

SILICON

Additional Feature :

AVALANCHE RATED

Series :

PolarHT™

Number of Elements :

1

Power Dissipation (Max) :

600W (Tc)

Product Type :

MOSFET

Number of Terminals :

3

Product Category :

MOSFET

Rds On (Max) @ Id, Vgs :

11m Ω @ 70A, 10V

Operating Temperature :

-55°C~175°C TJ

Manufacturer :

IXYS

Input Capacitance (Ciss) (Max) @ Vds :

4700pF @ 25V

Gate Charge (Qg) (Max) @ Vgs :

155nC @ 10V

Continuous Drain Current (ID) :

140A

Package Shape :

RECTANGULAR

Case Connection :

DRAIN

Qualification Status :

Not Qualified

FET Technology :

METAL-OXIDE SEMICONDUCTOR

RoHS :

Details

Element Configuration :

Single