IXTQ120N15P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Surface Mount :

No

Type :

PolarHT Power MOSFET

Continuous Drain Current (ID) :

120A

Qualification Status :

Not Qualified

Number of Channels :

1 Channel

Polarity/Channel Type :

N-Channel

Lead Free :

Lead Free

Channel Mode :

Enhancement

Package Shape :

RECTANGULAR

Terminal Finish :

Matte Tin (Sn)

Pin Count :

3

Rds On (Max) @ Id, Vgs :

16m Ω @ 500mA, 10V

Drain to Source Breakdown Voltage :

150V

Drain to Source Voltage (Vdss) :

150V

Power Dissipation (Max) :

600W (Tc)

Rds On Max :

16 mΩ

Mounting Type :

Through Hole

FET Type :

N-Channel

Rise Time :

42ns

Vgs(th) (Max) @ Id :

5V @ 250μA

Configuration :

Single

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Supplier Device Package :

TO-3P

Input Capacitance (Ciss) (Max) @ Vds :

4900pF @ 25V

Manufacturer :

IXYS

Reach Compliance Code :

Compliant

Drain to Source Resistance :

16 mΩ

Product Category :

MOSFET

Power Dissipation-Max :

600W Tc

Number of Elements :

1

Drain-source On Resistance-Max :

0.016Ohm

Number of Pins :

3

Subcategory :

MOSFETs

Operating Temperature :

-55°C~175°C TJ

Min Operating Temperature :

-55 °C

Current - Continuous Drain (Id) @ 25°C :

120A Tc

Brand :

IXYS

ECCN Code :

EAR99

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

FET Feature :

--

Case Connection :

DRAIN

Fall Time (Typ) :

26 ns

Additional Feature :

AVALANCHE RATED

Product Type :

MOSFET

Packaging :

Tube

Height :

20.1 mm

Width :

4.9 mm

Drive Voltage (Max Rds On,Min Rds On) :

10V

Published :

2006

Operating Mode :

ENHANCEMENT MODE

Terminal Form :

THROUGH-HOLE

Maximum Operating Temperature :

+ 175 C

Tradename :

PolarHT

Number of Terminations :

3

DS Breakdown Voltage-Min :

150 V

Mounting Style :

Through Hole

Series :

PolarHT™

Transistor Element Material :

SILICON

RoHS :

Compliant

Pulsed Drain Current-Max (IDM) :

260A

Turn-Off Delay Time :

85 ns

Avalanche Energy Rating (Eas) :

2000 mJ

Base Product Number :

IXTQ120

Transistor Application :

SWITCHING

Transistor Polarity :

N-Channel

Vgs (Max) :

±20V

Power Dissipation :

600W

Number of Terminals :

3

Gate to Source Voltage (Vgs) :

20V

RoHS Status :

ROHS3 Compliant

Max Power Dissipation :

600 W

Input Capacitance :

4.9 nF

JESD-30 Code :

R-PSFM-T3

Terminal Position :

Single

Minimum Operating Temperature :

- 55 C

Product Status :

Active

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Length :

15.8 mm

Element Configuration :

Single

Transistor Type :

1 N-Channel

Package / Case :

TO-3P-3, SC-65-3

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Max Operating Temperature :

175 °C

Pbfree Code :

yes

Gate Charge (Qg) (Max) @ Vgs :

150nC @ 10V

Mount :

Through Hole

JESD-609 Code :

e3

Package :

Tube