IXTQ96N20P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Published :

2006

Turn-Off Delay Time :

75 ns

Minimum Operating Temperature :

- 55 C

ECCN Code :

EAR99

Number of Channels :

1 Channel

Power Dissipation :

600W

Terminal Finish :

Matte Tin (Sn)

Package :

Tube

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Mounting Style :

Through Hole

Supplier Device Package :

TO-3P

Qualification Status :

Not Qualified

Number of Terminals :

3

Number of Terminations :

3

Input Capacitance (Ciss) (Max) @ Vds :

4800pF @ 25V

Transistor Type :

1 N-Channel

Transistor Element Material :

SILICON

Polarity/Channel Type :

N-Channel

DS Breakdown Voltage-Min :

200 V

Product Type :

MOSFET

Channel Mode :

Enhancement

Drain-source On Resistance-Max :

0.024Ohm

Pbfree Code :

yes

FET Feature :

--

Power Dissipation-Max :

600W Tc

Pulsed Drain Current-Max (IDM) :

225A

JESD-609 Code :

e3

Package / Case :

TO-3P-3, SC-65-3

Avalanche Energy Rating (Eas) :

1500 mJ

Operating Mode :

ENHANCEMENT MODE

Continuous Drain Current (ID) :

96A

Packaging :

Tube

Reach Compliance Code :

Compliant

Drain to Source Voltage (Vdss) :

200V

Maximum Operating Temperature :

+ 175 C

Vgs(th) (Max) @ Id :

5V @ 250μA

Current - Continuous Drain (Id) @ 25°C :

96A Tc

Terminal Position :

Single

Lead Free :

Lead Free

Package Shape :

RECTANGULAR

Additional Feature :

AVALANCHE RATED

Surface Mount :

No

RoHS :

Details

Mount :

Through Hole

JESD-30 Code :

R-PSFM-T3

RoHS Status :

ROHS3 Compliant

Drive Voltage (Max Rds On,Min Rds On) :

10V

Terminal Form :

THROUGH-HOLE

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Series :

PolarHT™

Product Category :

MOSFET

Product Status :

Active

Manufacturer :

IXYS

Gate Charge (Qg) (Max) @ Vgs :

145nC @ 10V

Pin Count :

3

Number of Pins :

3

Fall Time (Typ) :

30 ns

Brand :

IXYS

Rise Time :

30ns

Configuration :

Single

Operating Temperature :

-55°C~175°C TJ

Rds On (Max) @ Id, Vgs :

24m Ω @ 500mA, 10V

Drain to Source Breakdown Voltage :

200V

Vgs (Max) :

±20V

Transistor Application :

SWITCHING

Transistor Polarity :

N-Channel

FET Type :

N-Channel

Factory Lead Time :

24 Weeks

Base Product Number :

IXTQ96

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Case Connection :

DRAIN

Gate to Source Voltage (Vgs) :

20V

Power Dissipation (Max) :

600W (Tc)

Subcategory :

MOSFETs

Mounting Type :

Through Hole

Element Configuration :

Single

Number of Elements :

1