IXTQ96N15P
- Mfr.Part #
- IXTQ96N15P
- Manufacturer
- Littelfuse
- Package / Case
- TO-3P-3, SC-65-3
- Datasheet
- Download
- Description
- MOSFET N-CH 150V 96A TO3P
- Stock
- 12,221
- In Stock :
- 12,221
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Product Status :
- Active
- Gate to Source Voltage (Vgs) :
- 20V
- Turn-Off Delay Time :
- 66 ns
- Type :
- PolarHT Power MOSFET
- Operating Temperature :
- -55°C~175°C TJ
- Qualification Status :
- Not Qualified
- Drain-source On Resistance-Max :
- 0.024Ohm
- Mount :
- Through Hole
- Polarity/Channel Type :
- N-Channel
- Number of Channels :
- 1 Channel
- Additional Feature :
- AVALANCHE RATED
- Power Dissipation :
- 480W
- Vgs (Max) :
- ±20V
- Reach Compliance Code :
- Compliant
- Maximum Operating Temperature :
- + 175 C
- Drain to Source Breakdown Voltage :
- 150V
- Rds On (Max) @ Id, Vgs :
- 24m Ω @ 500mA, 10V
- Base Product Number :
- IXTQ96
- Terminal Position :
- Single
- Mounting Type :
- Through Hole
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Minimum Operating Temperature :
- - 55 C
- Package :
- Tube
- RoHS Status :
- ROHS3 Compliant
- FET Feature :
- --
- Manufacturer :
- IXYS
- Subcategory :
- MOSFETs
- DS Breakdown Voltage-Min :
- 150 V
- Terminal Finish :
- Matte Tin (Sn)
- Packaging :
- Tube
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Channel Mode :
- Enhancement
- Terminal Form :
- THROUGH-HOLE
- Element Configuration :
- Single
- Operating Mode :
- ENHANCEMENT MODE
- Product Category :
- MOSFET
- Rise Time :
- 33ns
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Transistor Type :
- 1 N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 110nC @ 10V
- JESD-30 Code :
- R-PSFM-T3
- FET Type :
- N-Channel
- Avalanche Energy Rating (Eas) :
- 1000 mJ
- Package / Case :
- TO-3P-3, SC-65-3
- Pbfree Code :
- yes
- Number of Elements :
- 1
- JESD-609 Code :
- e3
- RoHS :
- Details
- Current - Continuous Drain (Id) @ 25°C :
- 96A Tc
- Published :
- 2006
- Tradename :
- PolarHT
- Product Type :
- MOSFET
- Width :
- 4.9 mm
- Height :
- 20.3 mm
- Number of Terminations :
- 3
- ECCN Code :
- EAR99
- Brand :
- IXYS
- Transistor Application :
- SWITCHING
- Surface Mount :
- No
- Input Capacitance (Ciss) (Max) @ Vds :
- 3500pF @ 25V
- Configuration :
- Single
- Series :
- PolarHT™
- Length :
- 15.8 mm
- Number of Terminals :
- 3
- Drain to Source Voltage (Vdss) :
- 150V
- Pulsed Drain Current-Max (IDM) :
- 250A
- Lead Free :
- Lead Free
- Power Dissipation (Max) :
- 480W (Tc)
- Factory Lead Time :
- 24 Weeks
- Power Dissipation-Max :
- 480W Tc
- Mounting Style :
- Through Hole
- Package Shape :
- RECTANGULAR
- Supplier Device Package :
- TO-3P
- Fall Time (Typ) :
- 18 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Polarity :
- N-Channel
- Pin Count :
- 3
- Number of Pins :
- 3
- Case Connection :
- DRAIN
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Transistor Element Material :
- SILICON
- Continuous Drain Current (ID) :
- 96A
- Datasheets
- IXTQ96N15P

N-Channel Tube 24m Ω @ 500mA, 10V ±20V 3500pF @ 25V 110nC @ 10V 150V TO-3P-3, SC-65-3
IXTQ96N15P Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 1000 mJ.A device's maximal input capacitance is 3500pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 96A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 150V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 66 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 250A, which is its maximum rated peak drain current.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.To maintain normal operation, it is recommended that the DS breakdown voltage be above 150 V.This transistor requires a 150V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
IXTQ96N15P Features
the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 96A
a drain-to-source breakdown voltage of 150V voltage
the turn-off delay time is 66 ns
based on its rated peak drain current 250A.
a 150V drain to source voltage (Vdss)
IXTQ96N15P Applications
There are a lot of IXYS
IXTQ96N15P applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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