IXTQ96N15P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

ECCN Code :

EAR99

Power Dissipation (Max) :

480W (Tc)

Gate to Source Voltage (Vgs) :

20V

Maximum Operating Temperature :

+ 175 C

Number of Elements :

1

Manufacturer :

IXYS

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Tradename :

PolarHT

Case Connection :

DRAIN

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Product Status :

Active

Number of Terminals :

3

Surface Mount :

No

Type :

PolarHT Power MOSFET

Terminal Position :

Single

Additional Feature :

AVALANCHE RATED

Package / Case :

TO-3P-3, SC-65-3

Fall Time (Typ) :

18 ns

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Terminations :

3

Configuration :

Single

Subcategory :

MOSFETs

Package Shape :

RECTANGULAR

Terminal Form :

THROUGH-HOLE

Polarity/Channel Type :

N-Channel

JESD-30 Code :

R-PSFM-T3

Height :

20.3 mm

Pin Count :

3

Transistor Element Material :

SILICON

Factory Lead Time :

24 Weeks

Rds On (Max) @ Id, Vgs :

24m Ω @ 500mA, 10V

Mounting Style :

Through Hole

Number of Pins :

3

Pulsed Drain Current-Max (IDM) :

250A

Transistor Application :

SWITCHING

Terminal Finish :

Matte Tin (Sn)

Vgs(th) (Max) @ Id :

5V @ 250μA

Rise Time :

33ns

RoHS Status :

ROHS3 Compliant

Transistor Polarity :

N-Channel

Drain-source On Resistance-Max :

0.024Ohm

Length :

15.8 mm

Lead Free :

Lead Free

Gate Charge (Qg) (Max) @ Vgs :

110nC @ 10V

Operating Mode :

ENHANCEMENT MODE

Reach Compliance Code :

Compliant

Pbfree Code :

yes

Element Configuration :

Single

Minimum Operating Temperature :

- 55 C

Turn-Off Delay Time :

66 ns

Power Dissipation :

480W

Transistor Type :

1 N-Channel

Brand :

IXYS

Series :

PolarHT™

DS Breakdown Voltage-Min :

150 V

Channel Mode :

Enhancement

JESD-609 Code :

e3

FET Technology :

METAL-OXIDE SEMICONDUCTOR

RoHS :

Details

Current - Continuous Drain (Id) @ 25°C :

96A Tc

FET Feature :

--

Qualification Status :

Not Qualified

Avalanche Energy Rating (Eas) :

1000 mJ

Package :

Tube

Continuous Drain Current (ID) :

96A

FET Type :

N-Channel

Input Capacitance (Ciss) (Max) @ Vds :

3500pF @ 25V

Published :

2006

Power Dissipation-Max :

480W Tc

Number of Channels :

1 Channel

Base Product Number :

IXTQ96

Product Type :

MOSFET

Product Category :

MOSFET

Mount :

Through Hole

Drive Voltage (Max Rds On,Min Rds On) :

10V

Packaging :

Tube

Operating Temperature :

-55°C~175°C TJ

Drain to Source Voltage (Vdss) :

150V

Width :

4.9 mm

Mounting Type :

Through Hole

Drain to Source Breakdown Voltage :

150V

Supplier Device Package :

TO-3P

Vgs (Max) :

±20V