IXTQ90N15T

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Mfr.Part #
IXTQ90N15T
Manufacturer
Littelfuse
Package / Case
TO-3P-3, SC-65-3
Datasheet
Download
Description
MOSFET N-CH 150V 90A TO3P
Stock
26,029
In Stock :
26,029

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Max Operating Temperature :
175 °C
Transistor Application :
SWITCHING
Published :
2007
FET Feature :
--
Configuration :
SINGLE WITH BUILT-IN DIODE
Avalanche Energy Rating (Eas) :
0.75 mJ
Package / Case :
TO-3P-3, SC-65-3
Product Status :
Active
Pbfree Code :
yes
Terminal Finish :
Matte Tin (Sn)
Packaging :
Tube
Drain to Source Voltage (Vdss) :
150V
JESD-609 Code :
e3
Package Shape :
RECTANGULAR
RoHS :
Compliant
Mount :
Through Hole
Number of Pins :
3
Supplier Device Package :
TO-3P
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Operating Temperature :
-55°C~175°C TJ
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Terminal Position :
Single
Number of Elements :
1
JESD-30 Code :
R-PSFM-T3
Drive Voltage (Max Rds On,Min Rds On) :
10V
Current - Continuous Drain (Id) @ 25°C :
90A Tc
Mounting Type :
Through Hole
FET Type :
N-Channel
Power Dissipation (Max) :
455W (Tc)
Case Connection :
DRAIN
Input Capacitance (Ciss) (Max) @ Vds :
4100pF @ 25V
Additional Feature :
AVALANCHE RATED
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Manufacturer :
IXYS Corporation
Gate Charge (Qg) (Max) @ Vgs :
80nC @ 10V
Power Dissipation :
455W
Number of Terminals :
3
Input Capacitance :
4.1 nF
Number of Terminations :
3
Gate to Source Voltage (Vgs) :
30V
Element Configuration :
Single
RoHS Status :
ROHS3 Compliant
DS Breakdown Voltage-Min :
150 V
Transistor Element Material :
SILICON
Drain to Source Breakdown Voltage :
150V
Operating Mode :
ENHANCEMENT MODE
Surface Mount :
No
Base Product Number :
IXTQ90
Rds On Max :
20 mΩ
Package :
Tube
Drain-source On Resistance-Max :
0.02Ohm
Pin Count :
3
Reach Compliance Code :
Compliant
Terminal Form :
THROUGH-HOLE
Vgs (Max) :
±30V
Polarity/Channel Type :
N-Channel
Drain to Source Resistance :
20 mΩ
Qualification Status :
Not Qualified
Rise Time :
22ns
Continuous Drain Current (ID) :
90A
ECCN Code :
EAR99
Series :
--
Max Power Dissipation :
455 W
Power Dissipation-Max :
455W Tc
Rds On (Max) @ Id, Vgs :
20m Ω @ 45A, 10V
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Turn-Off Delay Time :
44 ns
Min Operating Temperature :
-55 °C
Vgs(th) (Max) @ Id :
4.5V @ 1mA
Pulsed Drain Current-Max (IDM) :
250A
Fall Time (Typ) :
19 ns
Datasheets
IXTQ90N15T
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTQ90N15T from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-3P-3, SC-65-3, Number of Pins:3, Operating Temperature:-55°C~175°C TJ, Mounting Type:Through Hole, Number of Terminations:3, IXTQ90N15T pinout, IXTQ90N15T datasheet PDF, IXTQ90N15T amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTQ90N15T ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTQ90N15T


N-Channel Tube 20m Ω @ 45A, 10V ±30V 4100pF @ 25V 80nC @ 10V 150V TO-3P-3, SC-65-3

IXTQ90N15T Overview


This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 0.75 mJ.The maximum input capacitance of this device is 4100pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 90A.When VGS=150V, and ID flows to VDS at 150VVDS, the drain-source breakdown voltage is 150V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 44 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 250A.MOSFETs exhibit Drain-to-Source Resistance when a specific gate-to-source voltage (VGS) is applied to bias them into the on state, and this device's resistance is 20 mΩ.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 150 V.The drain-to-source voltage (Vdss) of this transistor needs to be at 150V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.

IXTQ90N15T Features


the avalanche energy rating (Eas) is 0.75 mJ
a continuous drain current (ID) of 90A
a drain-to-source breakdown voltage of 150V voltage
the turn-off delay time is 44 ns
based on its rated peak drain current 250A.
single MOSFETs transistor is 20 mΩ
a 150V drain to source voltage (Vdss)


IXTQ90N15T Applications


There are a lot of IXYS
IXTQ90N15T applications of single MOSFETs transistors.


  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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