IXTQ88N30P

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Mfr.Part #
IXTQ88N30P
Manufacturer
Littelfuse
Package / Case
TO-3P-3, SC-65-3
Datasheet
Download
Description
MOSFET N-CH 300V 88A TO3P
Stock
6
In Stock :
6

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Pbfree Code :
yes
Drain to Source Voltage (Vdss) :
300V
Current - Continuous Drain (Id) @ 25°C :
88A Tc
Continuous Drain Current (ID) :
88A
ECCN Code :
EAR99
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Configuration :
Single
Gate Charge (Qg) (Max) @ Vgs :
180nC @ 10V
Pin Count :
3
Fall Time (Typ) :
25 ns
Terminal Position :
Single
Case Connection :
DRAIN
MSL :
-
Rds On (Max) @ Id, Vgs :
40m Ω @ 44A, 10V
DS Breakdown Voltage-Min :
300 V
RoHS Status :
ROHS3 Compliant
RoHS :
Details
Power Dissipation :
600W
FET Type :
N-Channel
Rds On Max :
40 mΩ
Number of Terminations :
3
Number of Channels :
1 Channel
Published :
2006
Product Type :
MOSFET
Drain to Source Resistance :
40 mΩ
Transistor Type :
1 N-Channel
Brand :
IXYS
Qualification :
-
Rise Time :
24ns
Channel Type :
N Channel
Channel Mode :
Enhancement
Turn-Off Delay Time :
96 ns
Vgs (Max) :
±20V
Mounting Style :
Through Hole
Supplier Device Package :
TO-3P
Additional Feature :
AVALANCHE RATED
Input Capacitance (Ciss) (Max) @ Vds :
6300pF @ 25V
FET Feature :
--
JESD-30 Code :
R-PSFM-T3
Drain to Source Breakdown Voltage :
300V
Packaging :
Tube
Terminal Form :
THROUGH-HOLE
Vgs(th) (Max) @ Id :
5V @ 250μA
Number of Pins :
3
Pulsed Drain Current-Max (IDM) :
220A
Drain-source On Resistance-Max :
0.04Ohm
Transistor Element Material :
SILICON
Number of Terminals :
3
Avalanche Energy Rating (Eas) :
2000 mJ
Power Dissipation (Max) :
600W (Tc)
Gate to Source Voltage (Vgs) :
20V
Drive Voltage (Max Rds On,Min Rds On) :
10V
Base Product Number :
IXTQ88
Surface Mount :
No
Threshold Voltage :
5V
Subcategory :
MOSFETs
Max Operating Temperature :
150 °C
Polarity/Channel Type :
N-Channel
Series :
PolarHT™
Operating Temperature :
-55°C~150°C TJ
Mounting Type :
Through Hole
Mount :
Through Hole
Input Capacitance :
6.3 nF
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Power Dissipation-Max :
600W Tc
REACH SVHC :
No SVHC
Terminal Finish :
Matte Tin (Sn)
Manufacturer :
IXYS
Qualification Status :
Not Qualified
Min Operating Temperature :
-55 °C
Number of Elements :
1
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Package / Case :
TO-3P-3, SC-65-3
JESD-609 Code :
e3
Element Configuration :
Single
Package Shape :
RECTANGULAR
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Continuous Drain Current Id :
88A
Maximum Operating Temperature :
+ 150 C
Product Category :
MOSFET
Transistor Polarity :
N-Channel
Package :
Tube
Minimum Operating Temperature :
- 55 C
Operating Mode :
ENHANCEMENT MODE
Max Power Dissipation :
600 W
Transistor Application :
SWITCHING
Product Status :
Active
Reach Compliance Code :
Unknown
Datasheets
IXTQ88N30P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTQ88N30P from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Number of Channels:1 Channel, Number of Pins:3, Operating Temperature:-55°C~150°C TJ, Mounting Type:Through Hole, Package / Case:TO-3P-3, SC-65-3, IXTQ88N30P pinout, IXTQ88N30P datasheet PDF, IXTQ88N30P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTQ88N30P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTQ88N30P


N-Channel Tube 40m Ω @ 44A, 10V ±20V 6300pF @ 25V 180nC @ 10V 300V TO-3P-3, SC-65-3

IXTQ88N30P Overview


Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 2000 mJ.A device's maximal input capacitance is 6300pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 88A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 300V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 96 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 220A, which is its maximum rated peak drain current.When a gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the resistance between the drain and the source of the device is 40 mΩ.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.An electrical device's threshold voltage is the point at which any of its operations will become active, and this transistor has a 5V threshold voltage.To maintain normal operation, it is recommended that the DS breakdown voltage be above 300 V.This transistor requires a 300V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).

IXTQ88N30P Features


the avalanche energy rating (Eas) is 2000 mJ
a continuous drain current (ID) of 88A
a drain-to-source breakdown voltage of 300V voltage
the turn-off delay time is 96 ns
based on its rated peak drain current 220A.
single MOSFETs transistor is 40 mΩ
a threshold voltage of 5V
a 300V drain to source voltage (Vdss)


IXTQ88N30P Applications


There are a lot of IXYS
IXTQ88N30P applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
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