IXTQ88N30P
- Mfr.Part #
- IXTQ88N30P
- Manufacturer
- Littelfuse
- Package / Case
- TO-3P-3, SC-65-3
- Datasheet
- Download
- Description
- MOSFET N-CH 300V 88A TO3P
- Stock
- 6
- In Stock :
- 6
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Pbfree Code :
- yes
- Drain to Source Voltage (Vdss) :
- 300V
- Current - Continuous Drain (Id) @ 25°C :
- 88A Tc
- Continuous Drain Current (ID) :
- 88A
- ECCN Code :
- EAR99
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Configuration :
- Single
- Gate Charge (Qg) (Max) @ Vgs :
- 180nC @ 10V
- Pin Count :
- 3
- Fall Time (Typ) :
- 25 ns
- Terminal Position :
- Single
- Case Connection :
- DRAIN
- MSL :
- -
- Rds On (Max) @ Id, Vgs :
- 40m Ω @ 44A, 10V
- DS Breakdown Voltage-Min :
- 300 V
- RoHS Status :
- ROHS3 Compliant
- RoHS :
- Details
- Power Dissipation :
- 600W
- FET Type :
- N-Channel
- Rds On Max :
- 40 mΩ
- Number of Terminations :
- 3
- Number of Channels :
- 1 Channel
- Published :
- 2006
- Product Type :
- MOSFET
- Drain to Source Resistance :
- 40 mΩ
- Transistor Type :
- 1 N-Channel
- Brand :
- IXYS
- Qualification :
- -
- Rise Time :
- 24ns
- Channel Type :
- N Channel
- Channel Mode :
- Enhancement
- Turn-Off Delay Time :
- 96 ns
- Vgs (Max) :
- ±20V
- Mounting Style :
- Through Hole
- Supplier Device Package :
- TO-3P
- Additional Feature :
- AVALANCHE RATED
- Input Capacitance (Ciss) (Max) @ Vds :
- 6300pF @ 25V
- FET Feature :
- --
- JESD-30 Code :
- R-PSFM-T3
- Drain to Source Breakdown Voltage :
- 300V
- Packaging :
- Tube
- Terminal Form :
- THROUGH-HOLE
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Number of Pins :
- 3
- Pulsed Drain Current-Max (IDM) :
- 220A
- Drain-source On Resistance-Max :
- 0.04Ohm
- Transistor Element Material :
- SILICON
- Number of Terminals :
- 3
- Avalanche Energy Rating (Eas) :
- 2000 mJ
- Power Dissipation (Max) :
- 600W (Tc)
- Gate to Source Voltage (Vgs) :
- 20V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Base Product Number :
- IXTQ88
- Surface Mount :
- No
- Threshold Voltage :
- 5V
- Subcategory :
- MOSFETs
- Max Operating Temperature :
- 150 °C
- Polarity/Channel Type :
- N-Channel
- Series :
- PolarHT™
- Operating Temperature :
- -55°C~150°C TJ
- Mounting Type :
- Through Hole
- Mount :
- Through Hole
- Input Capacitance :
- 6.3 nF
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation-Max :
- 600W Tc
- REACH SVHC :
- No SVHC
- Terminal Finish :
- Matte Tin (Sn)
- Manufacturer :
- IXYS
- Qualification Status :
- Not Qualified
- Min Operating Temperature :
- -55 °C
- Number of Elements :
- 1
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Package / Case :
- TO-3P-3, SC-65-3
- JESD-609 Code :
- e3
- Element Configuration :
- Single
- Package Shape :
- RECTANGULAR
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Continuous Drain Current Id :
- 88A
- Maximum Operating Temperature :
- + 150 C
- Product Category :
- MOSFET
- Transistor Polarity :
- N-Channel
- Package :
- Tube
- Minimum Operating Temperature :
- - 55 C
- Operating Mode :
- ENHANCEMENT MODE
- Max Power Dissipation :
- 600 W
- Transistor Application :
- SWITCHING
- Product Status :
- Active
- Reach Compliance Code :
- Unknown
- Datasheets
- IXTQ88N30P

N-Channel Tube 40m Ω @ 44A, 10V ±20V 6300pF @ 25V 180nC @ 10V 300V TO-3P-3, SC-65-3
IXTQ88N30P Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 2000 mJ.A device's maximal input capacitance is 6300pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 88A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 300V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 96 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 220A, which is its maximum rated peak drain current.When a gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the resistance between the drain and the source of the device is 40 mΩ.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.An electrical device's threshold voltage is the point at which any of its operations will become active, and this transistor has a 5V threshold voltage.To maintain normal operation, it is recommended that the DS breakdown voltage be above 300 V.This transistor requires a 300V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
IXTQ88N30P Features
the avalanche energy rating (Eas) is 2000 mJ
a continuous drain current (ID) of 88A
a drain-to-source breakdown voltage of 300V voltage
the turn-off delay time is 96 ns
based on its rated peak drain current 220A.
single MOSFETs transistor is 40 mΩ
a threshold voltage of 5V
a 300V drain to source voltage (Vdss)
IXTQ88N30P Applications
There are a lot of IXYS
IXTQ88N30P applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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