IXTQ86N25T
- Mfr.Part #
- IXTQ86N25T
- Manufacturer
- Littelfuse
- Package / Case
- TO-3P-3, SC-65-3
- Datasheet
- Download
- Description
- MOSFET N-CH 250V 86A TO3P
- Stock
- 6,315
- In Stock :
- 6,315
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- FET Feature :
- -
- Reach Compliance Code :
- Compliant
- Terminal Position :
- Single
- Manufacturer :
- IXYS
- Operating Mode :
- ENHANCEMENT MODE
- Type :
- Trench Gate
- Transistor Element Material :
- SILICON
- Drain-source On Resistance-Max :
- 0.037Ohm
- Number of Terminations :
- 3
- Subcategory :
- MOSFETs
- Operating Temperature :
- -55°C~150°C TJ
- JESD-609 Code :
- e3
- Transistor Polarity :
- N-Channel
- Case Connection :
- DRAIN
- Base Product Number :
- IXTQ86
- JESD-30 Code :
- R-PSFM-T3
- Current - Continuous Drain (Id) @ 25°C :
- 86A Tc
- Tradename :
- HiPerFET
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- ECCN Code :
- EAR99
- Pbfree Code :
- yes
- Series :
- Trench
- Qualification Status :
- Not Qualified
- DS Breakdown Voltage-Min :
- 250V
- Rise Time :
- 28 ns
- Brand :
- IXYS
- Product Status :
- Active
- Supplier Device Package :
- TO-3P
- Maximum Operating Temperature :
- + 150 C
- Surface Mount :
- No
- Input Capacitance (Ciss) (Max) @ Vds :
- 5330pF @ 25V
- Packaging :
- Tube
- Pin Count :
- 3
- Vgs(th) (Max) @ Id :
- 5V @ 1mA
- Factory Lead Time :
- 26 Weeks
- Power Dissipation (Max) :
- 540W (Ta)
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Transistor Application :
- SWITCHING
- Package :
- Tube
- Vgs (Max) :
- ±30V
- Number of Elements :
- 1
- Package / Case :
- TO-3P-3, SC-65-3
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Product Type :
- MOSFET
- Minimum Operating Temperature :
- - 55 C
- Additional Feature :
- AVALANCHE RATED
- Product Category :
- MOSFET
- Avalanche Energy Rating (Eas) :
- 1500 mJ
- FET Type :
- N-Channel
- Drain to Source Voltage (Vdss) :
- 250V
- Drain Current-Max (Abs) (ID) :
- 86A
- Power Dissipation-Max :
- 540W Ta
- Gate Charge (Qg) (Max) @ Vgs :
- 105nC @ 10V
- RoHS Status :
- RoHS Compliant
- Pulsed Drain Current-Max (IDM) :
- 190A
- Mounting Style :
- Through Hole
- Mounting Type :
- Through Hole
- Published :
- 2012
- Rds On (Max) @ Id, Vgs :
- 37m Ω @ 43A, 10V
- RoHS :
- Details
- Terminal Finish :
- Matte Tin (Sn)
- Product :
- Power MOSFET Modules
- Datasheets
- IXTQ86N25T
N-Channel Tube 37m Ω @ 43A, 10V ±30V 5330pF @ 25V 105nC @ 10V 250V TO-3P-3, SC-65-3
IXTQ86N25T Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 1500 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 5330pF @ 25V.There is no drain current on this device since the maximum continuous current it can conduct is 86A.There is a peak drain current of 190A, its maximum pulsed drain current.In order for DS breakdown voltage to remain above 250V, it should remain above the 250V level.The transistor must receive a 250V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).
IXTQ86N25T Features
the avalanche energy rating (Eas) is 1500 mJ
based on its rated peak drain current 190A.
a 250V drain to source voltage (Vdss)
IXTQ86N25T Applications
There are a lot of IXYS
IXTQ86N25T applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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