IXTQ80N28T
- Mfr.Part #
- IXTQ80N28T
- Manufacturer
- Littelfuse
- Package / Case
- TO-3P-3, SC-65-3
- Datasheet
- Download
- Description
- MOSFET N-CH 280V 80A TO3P
- Stock
- 12,519
- In Stock :
- 12,519
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Terminals :
- 3
- JESD-30 Code :
- R-PSFM-T3
- Supplier Device Package :
- TO-3P
- Operating Temperature :
- -55°C~150°C TJ
- Vgs (Max) :
- ±30V
- Mounting Type :
- Through Hole
- Package :
- Tube
- Power Dissipation-Max :
- 500W Tc
- Pulsed Drain Current-Max (IDM) :
- 240A
- RoHS Status :
- RoHS Compliant
- Drain to Source Voltage (Vdss) :
- 280V
- Reach Compliance Code :
- Compliant
- Drain-source On Resistance-Max :
- 0.049Ohm
- Polarity/Channel Type :
- N-Channel
- Case Connection :
- DRAIN
- Packaging :
- Tube
- Transistor Element Material :
- SILICON
- Terminal Position :
- Single
- Input Capacitance (Ciss) (Max) @ Vds :
- 5000pF @ 25V
- Number of Terminations :
- 3
- Pin Count :
- 3
- Operating Mode :
- ENHANCEMENT MODE
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Manufacturer :
- IXYS Corporation
- Number of Pins :
- 3
- Product Status :
- Obsolete
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- FET Type :
- N-Channel
- Series :
- --
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- ECCN Code :
- EAR99
- Package / Case :
- TO-3P-3, SC-65-3
- Continuous Drain Current (ID) :
- 80A
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Power Dissipation (Max) :
- 500W (Tc)
- Vgs(th) (Max) @ Id :
- 5V @ 1mA
- Pbfree Code :
- yes
- FET Feature :
- --
- Mount :
- Through Hole
- Rds On (Max) @ Id, Vgs :
- 49m Ω @ 500mA, 10V
- Gate Charge (Qg) (Max) @ Vgs :
- 115nC @ 10V
- DS Breakdown Voltage-Min :
- 280V
- Qualification Status :
- Not Qualified
- JESD-609 Code :
- e3
- Published :
- 2006
- Surface Mount :
- No
- Number of Elements :
- 1
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Package Shape :
- RECTANGULAR
- Terminal Form :
- THROUGH-HOLE
- Current - Continuous Drain (Id) @ 25°C :
- 80A Tc
- Terminal Finish :
- Matte Tin (Sn)
- Datasheets
- IXTQ80N28T

N-Channel Tube 49m Ω @ 500mA, 10V ±30V 5000pF @ 25V 115nC @ 10V 280V TO-3P-3, SC-65-3
IXTQ80N28T Overview
A device's maximum input capacitance is 5000pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 80A for this device. Drain current refers to the capacity of the device to conduct continuous current.Its maximum pulsed drain current is 240A, which is also its maximum rating peak drainage current.For normal operation, maintain the DS breakdown voltage above 280V.To operate this transistor, you need to apply a 280V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
IXTQ80N28T Features
a continuous drain current (ID) of 80A
based on its rated peak drain current 240A.
a 280V drain to source voltage (Vdss)
IXTQ80N28T Applications
There are a lot of IXYS
IXTQ80N28T applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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