IXTQ76N25T

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Mfr.Part #
IXTQ76N25T
Manufacturer
Littelfuse
Package / Case
TO-3P-3, SC-65-3
Datasheet
Download
Description
MOSFET N-CH 250V 76A TO3P
Stock
6,356
In Stock :
6,356

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Product Status :
Active
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Power Dissipation-Max (Abs) :
460 W
Operating Temperature :
-55°C~150°C TJ
Number of Terminations :
3
Avalanche Energy Rating (Eas) :
1500 mJ
Number of Terminals :
3
Gate to Source Voltage (Vgs) :
30V
Power Dissipation-Max :
460W Tc
Height :
20.3 mm
Transistor Polarity :
N-Channel
Additional Feature :
AVALANCHE RATED
Power Dissipation :
460W
Drain-source On Resistance-Max :
0.039 Ω
Base Product Number :
IXTQ76
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Current - Continuous Drain (Id) @ 25°C :
76A Tc
Polarity/Channel Type :
N-Channel
Lead Free :
Lead Free
Rise Time :
25ns
Drive Voltage (Max Rds On,Min Rds On) :
10V
Published :
2007
Terminal Position :
Single
Package / Case :
TO-3P-3, SC-65-3
Drain to Source Voltage (Vdss) :
250V
Terminal Finish :
Pure Tin (Sn)
Drain Current-Max (Abs) (ID) :
76 A
Product Category :
MOSFET
Pulsed Drain Current-Max (IDM) :
170A
Transistor Type :
1 N-Channel
Channel Mode :
Enhancement
Number of Pins :
3
Maximum Operating Temperature :
+ 150 C
Turn-Off Delay Time :
56 ns
Product Type :
MOSFET
Rds On (Max) @ Id, Vgs :
39m Ω @ 500mA, 10V
Manufacturer :
IXYS
Mounting Type :
Through Hole
Minimum Operating Temperature :
- 55 C
Transistor Element Material :
SILICON
Width :
4.9 mm
Number of Channels :
1 Channel
Number of Elements :
1
Qualification Status :
Not Qualified
Fall Time (Typ) :
29 ns
Drain to Source Breakdown Voltage :
250V
RoHS Status :
ROHS3 Compliant
Pin Count :
3
DS Breakdown Voltage-Min :
250 V
Length :
15.8 mm
Reach Compliance Code :
Compliant
Power Dissipation (Max) :
460W (Tc)
Type :
Trench Power MOSFET
Mounting Style :
Through Hole
Element Configuration :
Single
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Surface Mount :
No
FET Type :
N-Channel
Vgs (Max) :
±30V
ECCN Code :
EAR99
Vgs(th) (Max) @ Id :
5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs :
92nC @ 10V
Brand :
IXYS
Pbfree Code :
yes
Case Connection :
DRAIN
Operating Mode :
ENHANCEMENT MODE
JESD-30 Code :
R-PSFM-T3
FET Feature :
--
RoHS :
Details
Supplier Device Package :
TO-3P
Package Shape :
RECTANGULAR
Transistor Application :
SWITCHING
Mount :
Through Hole
Packaging :
Tube
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Continuous Drain Current (ID) :
76A
Tradename :
HiPerFET
Package :
Tube
Terminal Form :
THROUGH-HOLE
Input Capacitance (Ciss) (Max) @ Vds :
4500pF @ 25V
Configuration :
Single
Series :
--
Datasheets
IXTQ76N25T
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTQ76N25T from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Number of Terminations:3, Package / Case:TO-3P-3, SC-65-3, Number of Pins:3, Mounting Type:Through Hole, Number of Channels:1 Channel, Type:Trench Power MOSFET, IXTQ76N25T pinout, IXTQ76N25T datasheet PDF, IXTQ76N25T amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTQ76N25T ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTQ76N25T


N-Channel Tube 39m Ω @ 500mA, 10V ±30V 4500pF @ 25V 92nC @ 10V 250V TO-3P-3, SC-65-3

IXTQ76N25T Overview


This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 1500 mJ.The maximum input capacitance of this device is 4500pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 76A.When VGS=250V, and ID flows to VDS at 250VVDS, the drain-source breakdown voltage is 250V in this device.As shown in the table below, the drain current of this device is 76 A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 56 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 170A.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 250 V.The drain-to-source voltage (Vdss) of this transistor needs to be at 250V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.

IXTQ76N25T Features


the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 76A
a drain-to-source breakdown voltage of 250V voltage
the turn-off delay time is 56 ns
based on its rated peak drain current 170A.
a 250V drain to source voltage (Vdss)


IXTQ76N25T Applications


There are a lot of IXYS
IXTQ76N25T applications of single MOSFETs transistors.


  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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