IXTQ74N20P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Series :

PolarHT™

Height :

20.3 mm

Surface Mount :

No

Drain-source On Resistance-Max :

0.034 Ω

Factory Lead Time :

24 Weeks

Operating Mode :

ENHANCEMENT MODE

Drain to Source Voltage (Vdss) :

200V

Lead Free :

Lead Free

Terminal Finish :

Matte Tin (Sn)

Vgs(th) (Max) @ Id :

5V @ 250μA

Number of Channels :

1 Channel

Power Dissipation-Max :

480W Tc

Current - Continuous Drain (Id) @ 25°C :

74A Tc

Element Configuration :

Single

DS Breakdown Voltage-Min :

200 V

Product Type :

MOSFET

Maximum Operating Temperature :

+ 175 C

Vgs (Max) :

±20V

Power Dissipation (Max) :

480W (Tc)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Avalanche Energy Rating (Eas) :

1000 mJ

Reach Compliance Code :

Compliant

Case Connection :

DRAIN

Transistor Element Material :

SILICON

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Package :

Tube

ECCN Code :

EAR99

Polarity/Channel Type :

N-Channel

Base Product Number :

IXTQ74

Pulsed Drain Current-Max (IDM) :

200A

Supplier Device Package :

TO-3P

Number of Terminals :

3

Rds On Max :

34 mΩ

Fall Time (Typ) :

21 ns

Number of Terminations :

3

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

34m Ω @ 37A, 10V

Min Operating Temperature :

-55 °C

Rise Time :

21ns

Continuous Drain Current (ID) :

74A

Minimum Operating Temperature :

- 55 C

FET Feature :

--

Qualification Status :

Not Qualified

Drain to Source Breakdown Voltage :

200V

Additional Feature :

AVALANCHE RATED

Terminal Position :

Single

Input Capacitance :

3.3 nF

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

107nC @ 10V

Number of Pins :

3

RoHS :

Details

Mount :

Through Hole

Power Dissipation-Max (Abs) :

480 W

Drain Current-Max (Abs) (ID) :

74 A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3

Terminal Form :

THROUGH-HOLE

Turn-Off Delay Time :

60 ns

RoHS Status :

ROHS3 Compliant

JESD-30 Code :

R-PSFM-T3

Configuration :

Single

Published :

2006

Pin Count :

3

Packaging :

Tube

Drain to Source Resistance :

34 mΩ

Package Shape :

RECTANGULAR

Length :

15.8 mm

Drive Voltage (Max Rds On,Min Rds On) :

10V

Brand :

IXYS

Gate to Source Voltage (Vgs) :

20V

Manufacturer :

IXYS

Operating Temperature :

-55°C~175°C TJ

Max Power Dissipation :

480 W

Transistor Application :

SWITCHING

Transistor Type :

1 N-Channel

Width :

4.9 mm

Max Operating Temperature :

175 °C

Pbfree Code :

yes

Mounting Type :

Through Hole

Power Dissipation :

400W

Product Category :

MOSFET

Product Status :

Active

Channel Mode :

Enhancement

Package / Case :

TO-3P-3, SC-65-3

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Input Capacitance (Ciss) (Max) @ Vds :

3300pF @ 25V

Transistor Polarity :

N-Channel

Mounting Style :

Through Hole