IXTQ69N30PM
- Mfr.Part #
- IXTQ69N30PM
- Manufacturer
- Littelfuse
- Package / Case
- TO-3P-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET N-CH 300V 25A TO3PFP
- Stock
- 10,429
- In Stock :
- 10,429
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Avalanche Energy Rating (Eas) :
- 1500 mJ
- Power Dissipation-Max :
- 90W Tc
- Transistor Element Material :
- SILICON
- Series :
- Polar
- Qualification Status :
- Not Qualified
- Mounting Style :
- Through Hole
- Supplier Device Package :
- TO-3PFP
- Input Capacitance (Ciss) (Max) @ Vds :
- 4960pF @ 25V
- FET Feature :
- -
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Published :
- 2012
- Vgs (Max) :
- ±20V
- Drain to Source Voltage (Vdss) :
- 300V
- Package :
- Tube
- Pulsed Drain Current-Max (IDM) :
- 200A
- JESD-30 Code :
- R-PSFM-T3
- Number of Terminations :
- 3
- Additional Feature :
- AVALANCHE RATED
- Polarity/Channel Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 156nC @ 10V
- Transistor Type :
- 1 N-Channel
- DS Breakdown Voltage-Min :
- 300V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Power Dissipation-Max (Abs) :
- 90 W
- Factory Lead Time :
- 24 Weeks
- Minimum Operating Temperature :
- - 55 C
- Rise Time :
- 25 ns
- Operating Mode :
- ENHANCEMENT MODE
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Number of Channels :
- 1 Channel
- Reach Compliance Code :
- Compliant
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Product Type :
- MOSFET
- Channel Mode :
- Enhancement
- Terminal Position :
- Single
- Pbfree Code :
- yes
- Mounting Type :
- Through Hole
- Package / Case :
- TO-3P-3 Full Pack
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Power Dissipation (Max) :
- 90W (Tc)
- ECCN Code :
- EAR99
- Number of Elements :
- 1
- Current - Continuous Drain (Id) @ 25°C :
- 25A Tc
- Number of Terminals :
- 3
- Package Shape :
- RECTANGULAR
- Drain Current-Max (Abs) (ID) :
- 25A
- Manufacturer :
- IXYS
- Maximum Operating Temperature :
- + 150 C
- Transistor Polarity :
- N-Channel
- Base Product Number :
- IXTQ69
- Surface Mount :
- No
- Operating Temperature :
- -55°C~150°C TJ
- RoHS :
- Details
- FET Type :
- N-Channel
- Terminal Form :
- THROUGH-HOLE
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Pin Count :
- 3
- Brand :
- IXYS
- Rds On (Max) @ Id, Vgs :
- 49m Ω @ 34.5A, 10V
- Product Category :
- MOSFET
- Product Status :
- Active
- Transistor Application :
- SWITCHING
- Packaging :
- Tube
- Drain-source On Resistance-Max :
- 0.049Ohm
- Datasheets
- IXTQ69N30PM
N-Channel Tube 49m Ω @ 34.5A, 10V ±20V 4960pF @ 25V 156nC @ 10V 300V TO-3P-3 Full Pack
IXTQ69N30PM Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 1500 mJ.A device's maximal input capacitance is 4960pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.In this device, the drain current is 25A, which is the maximum continuous current the device can conduct.In terms of pulsed drain current, it has a maximum of 200A, which is its maximum rated peak drain current.To maintain normal operation, it is recommended that the DS breakdown voltage be above 300V.This transistor requires a 300V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
IXTQ69N30PM Features
the avalanche energy rating (Eas) is 1500 mJ
based on its rated peak drain current 200A.
a 300V drain to source voltage (Vdss)
IXTQ69N30PM Applications
There are a lot of IXYS
IXTQ69N30PM applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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