IXTQ64N25P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Form :

THROUGH-HOLE

FET Type :

N-Channel

Manufacturer :

IXYS

Surface Mount :

No

Additional Feature :

AVALANCHE RATED

Transistor Element Material :

SILICON

JESD-30 Code :

R-PSFM-T3

Element Configuration :

Single

Reach Compliance Code :

Compliant

Width :

4.9 mm

Packaging :

Tube

Package / Case :

TO-3P-3, SC-65-3

Number of Terminals :

3

RoHS Status :

ROHS3 Compliant

Avalanche Energy Rating (Eas) :

1000 mJ

Gate Charge (Qg) (Max) @ Vgs :

105nC @ 10V

Turn-Off Delay Time :

60 ns

Number of Pins :

3

Gate to Source Voltage (Vgs) :

20V

Polarity/Channel Type :

N-Channel

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Rds On (Max) @ Id, Vgs :

49m Ω @ 500mA, 10V

Package Shape :

RECTANGULAR

Minimum Operating Temperature :

- 55 C

Terminal Finish :

Matte Tin (Sn)

Case Connection :

DRAIN

Input Capacitance (Ciss) (Max) @ Vds :

3450pF @ 25V

Pulsed Drain Current-Max (IDM) :

160A

Base Product Number :

IXTQ64

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Configuration :

Single

Product Status :

Active

Voltage - Rated DC :

25V

Factory Lead Time :

24 Weeks

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Height :

20.3 mm

Package :

Tube

Pbfree Code :

yes

Lead Free :

Lead Free

Vgs (Max) :

±20V

Supplier Device Package :

TO-3P

Drive Voltage (Max Rds On,Min Rds On) :

10V

Transistor Polarity :

N-Channel

Product Type :

MOSFET

Power Dissipation (Max) :

400W (Tc)

Drain to Source Voltage (Vdss) :

250V

Current - Continuous Drain (Id) @ 25°C :

64A Tc

Mounting Style :

Through Hole

Fall Time (Typ) :

20 ns

Transistor Application :

SWITCHING

Brand :

IXYS

Current Rating :

64A

Pin Count :

3

Drain to Source Breakdown Voltage :

250V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Power Dissipation-Max :

400W Tc

Channel Mode :

Enhancement

Published :

2006

Length :

15.8 mm

Product Category :

MOSFET

Vgs(th) (Max) @ Id :

5V @ 250μA

Operating Temperature :

-55°C~150°C TJ

Drain-source On Resistance-Max :

0.049Ohm

Transistor Type :

1 N-Channel

DS Breakdown Voltage-Min :

250 V

Maximum Operating Temperature :

+ 150 C

Rise Time :

23ns

Qualification Status :

Not Qualified

Number of Elements :

1

JESD-609 Code :

e3

Operating Mode :

ENHANCEMENT MODE

FET Feature :

--

Continuous Drain Current (ID) :

64A

Number of Terminations :

3

Mounting Type :

Through Hole

Number of Channels :

1 Channel

Series :

PolarHT™

Mount :

Through Hole

Power Dissipation :

400W

ECCN Code :

EAR99

RoHS :

Details

Terminal Position :

Single

Subcategory :

MOSFETs