IXTQ64N25P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Position :

Single

Number of Channels :

1 Channel

Power Dissipation (Max) :

400W (Tc)

Mount :

Through Hole

Transistor Application :

SWITCHING

Vgs (Max) :

±20V

Transistor Type :

1 N-Channel

Surface Mount :

No

Product Category :

MOSFET

Turn-Off Delay Time :

60 ns

Fall Time (Typ) :

20 ns

Additional Feature :

AVALANCHE RATED

Manufacturer :

IXYS

Rise Time :

23ns

RoHS Status :

ROHS3 Compliant

Minimum Operating Temperature :

- 55 C

RoHS :

Details

Gate Charge (Qg) (Max) @ Vgs :

105nC @ 10V

Rds On (Max) @ Id, Vgs :

49m Ω @ 500mA, 10V

Brand :

IXYS

DS Breakdown Voltage-Min :

250 V

Number of Terminations :

3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Pins :

3

Input Capacitance (Ciss) (Max) @ Vds :

3450pF @ 25V

Series :

PolarHT™

Number of Terminals :

3

ECCN Code :

EAR99

Supplier Device Package :

TO-3P

Voltage - Rated DC :

25V

Published :

2006

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package Shape :

RECTANGULAR

Width :

4.9 mm

Pbfree Code :

yes

Continuous Drain Current (ID) :

64A

FET Feature :

--

Current Rating :

64A

Number of Elements :

1

JESD-30 Code :

R-PSFM-T3

Product Type :

MOSFET

Packaging :

Tube

JESD-609 Code :

e3

Length :

15.8 mm

Terminal Finish :

Matte Tin (Sn)

Lead Free :

Lead Free

Mounting Type :

Through Hole

Operating Mode :

ENHANCEMENT MODE

Power Dissipation :

400W

Mounting Style :

Through Hole

Maximum Operating Temperature :

+ 150 C

Transistor Polarity :

N-Channel

Base Product Number :

IXTQ64

Pin Count :

3

Channel Mode :

Enhancement

Configuration :

Single

Drain-source On Resistance-Max :

0.049Ohm

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Drain to Source Voltage (Vdss) :

250V

Reach Compliance Code :

Compliant

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Current - Continuous Drain (Id) @ 25°C :

64A Tc

Transistor Element Material :

SILICON

Height :

20.3 mm

Package :

Tube

Vgs(th) (Max) @ Id :

5V @ 250μA

Element Configuration :

Single

Terminal Form :

THROUGH-HOLE

Polarity/Channel Type :

N-Channel

Gate to Source Voltage (Vgs) :

20V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Pulsed Drain Current-Max (IDM) :

160A

Package / Case :

TO-3P-3, SC-65-3

Avalanche Energy Rating (Eas) :

1000 mJ

Subcategory :

MOSFETs

Drain to Source Breakdown Voltage :

250V

Operating Temperature :

-55°C~150°C TJ

Case Connection :

DRAIN

FET Type :

N-Channel

Factory Lead Time :

24 Weeks

Power Dissipation-Max :

400W Tc

Product Status :

Active

Qualification Status :

Not Qualified