IXTQ60N20L2

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Terminals :

3

Case Connection :

DRAIN

Transistor Application :

AMPLIFIER

Package :

Tube

FET Feature :

--

Additional Feature :

AVALANCHE RATED

Current - Continuous Drain (Id) @ 25°C :

60A Tc

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Reach Compliance Code :

Compliant

Product Status :

Active

Drain to Source Voltage (Vdss) :

200V

Series :

Linear L2™

DS Breakdown Voltage-Min :

200 V

Input Capacitance (Ciss) (Max) @ Vds :

10500pF @ 25V

Operating Temperature :

-55°C~150°C TJ

Turn-Off Delay Time :

90 ns

Package Shape :

RECTANGULAR

Base Product Number :

IXTQ60

Mount :

Through Hole

Transistor Type :

1 N-Channel

Number of Channels :

1 Channel

Operating Mode :

ENHANCEMENT MODE

JESD-30 Code :

R-PSFM-T3

RoHS Status :

ROHS3 Compliant

Power Dissipation-Max (Abs) :

540 W

Product Category :

MOSFET

Vgs(th) (Max) @ Id :

4.5V @ 250μA

Transistor Polarity :

N-Channel

Product Type :

MOSFET

Maximum Operating Temperature :

+ 150 C

Number of Terminations :

3

RoHS :

Details

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Minimum Operating Temperature :

- 55 C

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Gate Charge (Qg) (Max) @ Vgs :

255nC @ 10V

Power Dissipation-Max :

540W Tc

Packaging :

Tube

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pin Count :

3

Pulsed Drain Current-Max (IDM) :

150A

Brand :

IXYS

FET Type :

N-Channel

Qualification Status :

Not Qualified

Power Dissipation (Max) :

540W (Tc)

Drain-source On Resistance-Max :

0.045Ohm

Channel Mode :

Enhancement

Terminal Finish :

Pure Tin (Sn)

Polarity/Channel Type :

N-Channel

Configuration :

Single

Mounting Type :

Through Hole

Published :

2009

Package / Case :

TO-3P-3, SC-65-3

Element Configuration :

Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain Current-Max (Abs) (ID) :

60 A

Factory Lead Time :

24 Weeks

Manufacturer :

IXYS

Power Dissipation :

540W

Drain to Source Breakdown Voltage :

200V

ECCN Code :

EAR99

Number of Elements :

1

Transistor Element Material :

SILICON

Terminal Position :

Single

Terminal Form :

THROUGH-HOLE

Rds On (Max) @ Id, Vgs :

45m Ω @ 30A, 10V

Supplier Device Package :

TO-3P

Mounting Style :

Through Hole

Avalanche Energy Rating (Eas) :

2000 mJ

Pbfree Code :

yes

Surface Mount :

No

Continuous Drain Current (ID) :

60A

Vgs (Max) :

±20V