IXTQ60N10T
- Mfr.Part #
- IXTQ60N10T
- Manufacturer
- Littelfuse
- Package / Case
- TO-3P-3, SC-65-3
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 60A TO3P
- Stock
- 6,872
- In Stock :
- 6,872
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Power Dissipation-Max :
- 176W Tc
- Maximum Operating Temperature :
- + 175 C
- Power Dissipation (Max) :
- 176W (Tc)
- Pin Count :
- 3
- Brand :
- IXYS
- Avalanche Energy Rating (Eas) :
- 500 mJ
- Qualification Status :
- Not Qualified
- Current - Continuous Drain (Id) @ 25°C :
- 60A Tc
- FET Feature :
- -
- Factory Lead Time :
- 24 Weeks
- Series :
- Trench
- Input Capacitance (Ciss) (Max) @ Vds :
- 2650pF @ 25V
- Reach Compliance Code :
- Compliant
- Base Product Number :
- IXTQ60
- Operating Temperature :
- -55°C~175°C TJ
- FET Type :
- N-Channel
- DS Breakdown Voltage-Min :
- 100V
- Vgs (Max) :
- ±30V
- Transistor Application :
- SWITCHING
- Number of Elements :
- 1
- Vgs(th) (Max) @ Id :
- 4.5V @ 50μA
- RoHS :
- Details
- Product Type :
- MOSFET
- Packaging :
- Tube
- Drain-source On Resistance-Max :
- 0.018Ohm
- Polarity/Channel Type :
- N-Channel
- RoHS Status :
- RoHS Compliant
- Mounting Type :
- Through Hole
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- JESD-30 Code :
- R-PSFM-T3
- Terminal Position :
- Single
- Drain Current-Max (Abs) (ID) :
- 60A
- Package :
- Tube
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Tradename :
- HiPerFET
- Package Shape :
- RECTANGULAR
- Product Status :
- Active
- Package / Case :
- TO-3P-3, SC-65-3
- Surface Mount :
- No
- Drain to Source Voltage (Vdss) :
- 100V
- Number of Terminals :
- 3
- Mounting Style :
- Through Hole
- Additional Feature :
- AVALANCHE RATED
- Transistor Polarity :
- N-Channel
- Minimum Operating Temperature :
- - 55 C
- Type :
- Trench
- Rise Time :
- 40 ns
- Manufacturer :
- IXYS
- Number of Terminations :
- 3
- Product :
- Power MOSFET Modules
- ECCN Code :
- EAR99
- Supplier Device Package :
- TO-3P
- Case Connection :
- DRAIN
- Pulsed Drain Current-Max (IDM) :
- 180A
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Operating Mode :
- ENHANCEMENT MODE
- Transistor Element Material :
- SILICON
- Power Dissipation-Max (Abs) :
- 176 W
- Product Category :
- MOSFET
- Gate Charge (Qg) (Max) @ Vgs :
- 49nC @ 10V
- Rds On (Max) @ Id, Vgs :
- 18m Ω @ 25A, 10V
- Terminal Form :
- THROUGH-HOLE
- Datasheets
- IXTQ60N10T
N-Channel Tube 18m Ω @ 25A, 10V ±30V 2650pF @ 25V 49nC @ 10V 100V TO-3P-3, SC-65-3
IXTQ60N10T Overview
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 500 mJ.The maximum input capacitance of this device is 2650pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.As shown in the table below, the drain current of this device is 60A.There is no pulsed drain current maximum for this device based on its rated peak drain current 180A.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 100V.The drain-to-source voltage (Vdss) of this transistor needs to be at 100V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.
IXTQ60N10T Features
the avalanche energy rating (Eas) is 500 mJ
based on its rated peak drain current 180A.
a 100V drain to source voltage (Vdss)
IXTQ60N10T Applications
There are a lot of IXYS
IXTQ60N10T applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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