IXTQ52P10P
- Mfr.Part #
- IXTQ52P10P
- Manufacturer
- Littelfuse
- Package / Case
- TO-3P-3, SC-65-3
- Datasheet
- Download
- Description
- MOSFET P-CH 100V 52A TO3P
- Stock
- 23,101
- In Stock :
- 23,101
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Element Configuration :
- Single
- Height :
- 20.1 mm
- Qualification Status :
- Not Qualified
- Avalanche Energy Rating (Eas) :
- 1500 mJ
- Max Operating Temperature :
- 150 °C
- Base Product Number :
- IXTQ52
- Current - Continuous Drain (Id) @ 25°C :
- 52A Tc
- Packaging :
- Tube
- Package / Case :
- TO-3P-3, SC-65-3
- Transistor Polarity :
- P-Channel
- Product Status :
- Active
- Factory Lead Time :
- 24 Weeks
- Vgs (Max) :
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds :
- 2845pF @ 25V
- Terminal Form :
- THROUGH-HOLE
- Published :
- 2008
- Transistor Element Material :
- SILICON
- Number of Terminations :
- 3
- Transistor Application :
- SWITCHING
- Surface Mount :
- No
- Terminal Finish :
- PURE TIN
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- DS Breakdown Voltage-Min :
- 100 V
- Case Connection :
- DRAIN
- Min Operating Temperature :
- -55 °C
- Brand :
- IXYS
- Type :
- PolarP Power MOSFET
- Rds On (Max) @ Id, Vgs :
- 50m Ω @ 500mA, 10V
- Resistance :
- 50mOhm
- Gate to Source Voltage (Vgs) :
- 20V
- FET Type :
- P-Channel
- Mount :
- Through Hole
- ECCN Code :
- EAR99
- Terminal Position :
- Single
- Number of Pins :
- 3
- Additional Feature :
- AVALANCHE RATED
- Width :
- 4.9 mm
- Turn-Off Delay Time :
- 38 ns
- Channel Mode :
- Enhancement
- Transistor Type :
- 1 P-Channel
- Drain to Source Breakdown Voltage :
- -100V
- Drain to Source Resistance :
- 50 mΩ
- Series :
- PolarP™
- Product Category :
- MOSFET
- Manufacturer :
- IXYS
- Drain-source On Resistance-Max :
- 0.05 Ω
- Minimum Operating Temperature :
- - 55 C
- Rds On Max :
- 50 mΩ
- Vgs(th) (Max) @ Id :
- 4.5V @ 250μA
- Supplier Device Package :
- TO-3P
- Power Dissipation :
- 300W
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Input Capacitance :
- 2.845 nF
- JESD-30 Code :
- R-PSFM-T3
- Pin Count :
- 3
- Maximum Operating Temperature :
- + 150 C
- Number of Terminals :
- 3
- Gate Charge (Qg) (Max) @ Vgs :
- 60nC @ 10V
- Number of Channels :
- 1 Channel
- Drain Current-Max (Abs) (ID) :
- 52 A
- Rise Time :
- 29ns
- Continuous Drain Current (ID) :
- 52A
- Reach Compliance Code :
- Unknown
- Lead Free :
- Lead Free
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Operating Mode :
- ENHANCEMENT MODE
- RoHS :
- Compliant
- Package :
- Tube
- Mounting Style :
- Through Hole
- Power Dissipation-Max (Abs) :
- 300 W
- Fall Time (Typ) :
- 22 ns
- Power Dissipation-Max :
- 300W Tc
- Mounting Type :
- Through Hole
- Length :
- 15.8 mm
- Operating Temperature :
- -55°C~150°C TJ
- Number of Elements :
- 1
- Drain to Source Voltage (Vdss) :
- 100V
- Pulsed Drain Current-Max (IDM) :
- 130 A
- FET Feature :
- --
- Power Dissipation (Max) :
- 300W (Tc)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-609 Code :
- e3
- Max Power Dissipation :
- 300 W
- RoHS Status :
- ROHS3 Compliant
- Product Type :
- MOSFET
- Package Shape :
- RECTANGULAR
- Tradename :
- PolarP
- Polarity/Channel Type :
- P-Channel
- Configuration :
- Single
- Pbfree Code :
- yes
- Datasheets
- IXTQ52P10P

P-Channel Tube 50m Ω @ 500mA, 10V ±20V 2845pF @ 25V 60nC @ 10V 100V TO-3P-3, SC-65-3
IXTQ52P10P Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 1500 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 2845pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 52A amps.In this device, the drain-source breakdown voltage is -100V and VGS=-100V, so the drain-source breakdown voltage is -100V in this case.A device can conduct a maximum continuous current of [52 A] according to its drain current.It is [38 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 130 A.Single MOSFETs transistor is the resistance between the drain and source of a MOSFET when the gate-to-source voltage (VGS) is applied to bias the device to the on state, and Single MOSFETs transistor is 50 mΩ.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.The DS breakdown voltage should be maintained above 100 V to maintain normal operation.To operate this transistor, you will need a 100V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).
IXTQ52P10P Features
the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 52A
a drain-to-source breakdown voltage of -100V voltage
the turn-off delay time is 38 ns
based on its rated peak drain current 130 A.
single MOSFETs transistor is 50 mΩ
a 100V drain to source voltage (Vdss)
IXTQ52P10P Applications
There are a lot of IXYS
IXTQ52P10P applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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