IXTQ52P10P

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Mfr.Part #
IXTQ52P10P
Manufacturer
Littelfuse
Package / Case
TO-3P-3, SC-65-3
Datasheet
Download
Description
MOSFET P-CH 100V 52A TO3P
Stock
23,101
In Stock :
23,101

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Drive Voltage (Max Rds On,Min Rds On) :
10V
Element Configuration :
Single
Height :
20.1 mm
Qualification Status :
Not Qualified
Avalanche Energy Rating (Eas) :
1500 mJ
Max Operating Temperature :
150 °C
Base Product Number :
IXTQ52
Current - Continuous Drain (Id) @ 25°C :
52A Tc
Packaging :
Tube
Package / Case :
TO-3P-3, SC-65-3
Transistor Polarity :
P-Channel
Product Status :
Active
Factory Lead Time :
24 Weeks
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
2845pF @ 25V
Terminal Form :
THROUGH-HOLE
Published :
2008
Transistor Element Material :
SILICON
Number of Terminations :
3
Transistor Application :
SWITCHING
Surface Mount :
No
Terminal Finish :
PURE TIN
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
DS Breakdown Voltage-Min :
100 V
Case Connection :
DRAIN
Min Operating Temperature :
-55 °C
Brand :
IXYS
Type :
PolarP Power MOSFET
Rds On (Max) @ Id, Vgs :
50m Ω @ 500mA, 10V
Resistance :
50mOhm
Gate to Source Voltage (Vgs) :
20V
FET Type :
P-Channel
Mount :
Through Hole
ECCN Code :
EAR99
Terminal Position :
Single
Number of Pins :
3
Additional Feature :
AVALANCHE RATED
Width :
4.9 mm
Turn-Off Delay Time :
38 ns
Channel Mode :
Enhancement
Transistor Type :
1 P-Channel
Drain to Source Breakdown Voltage :
-100V
Drain to Source Resistance :
50 mΩ
Series :
PolarP™
Product Category :
MOSFET
Manufacturer :
IXYS
Drain-source On Resistance-Max :
0.05 Ω
Minimum Operating Temperature :
- 55 C
Rds On Max :
50 mΩ
Vgs(th) (Max) @ Id :
4.5V @ 250μA
Supplier Device Package :
TO-3P
Power Dissipation :
300W
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Input Capacitance :
2.845 nF
JESD-30 Code :
R-PSFM-T3
Pin Count :
3
Maximum Operating Temperature :
+ 150 C
Number of Terminals :
3
Gate Charge (Qg) (Max) @ Vgs :
60nC @ 10V
Number of Channels :
1 Channel
Drain Current-Max (Abs) (ID) :
52 A
Rise Time :
29ns
Continuous Drain Current (ID) :
52A
Reach Compliance Code :
Unknown
Lead Free :
Lead Free
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Operating Mode :
ENHANCEMENT MODE
RoHS :
Compliant
Package :
Tube
Mounting Style :
Through Hole
Power Dissipation-Max (Abs) :
300 W
Fall Time (Typ) :
22 ns
Power Dissipation-Max :
300W Tc
Mounting Type :
Through Hole
Length :
15.8 mm
Operating Temperature :
-55°C~150°C TJ
Number of Elements :
1
Drain to Source Voltage (Vdss) :
100V
Pulsed Drain Current-Max (IDM) :
130 A
FET Feature :
--
Power Dissipation (Max) :
300W (Tc)
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
JESD-609 Code :
e3
Max Power Dissipation :
300 W
RoHS Status :
ROHS3 Compliant
Product Type :
MOSFET
Package Shape :
RECTANGULAR
Tradename :
PolarP
Polarity/Channel Type :
P-Channel
Configuration :
Single
Pbfree Code :
yes
Datasheets
IXTQ52P10P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTQ52P10P from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-3P-3, SC-65-3, Number of Terminations:3, Type:PolarP Power MOSFET, Number of Pins:3, Number of Channels:1 Channel, Mounting Type:Through Hole, Operating Temperature:-55°C~150°C TJ, IXTQ52P10P pinout, IXTQ52P10P datasheet PDF, IXTQ52P10P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTQ52P10P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTQ52P10P


P-Channel Tube 50m Ω @ 500mA, 10V ±20V 2845pF @ 25V 60nC @ 10V 100V TO-3P-3, SC-65-3

IXTQ52P10P Overview


There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 1500 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 2845pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 52A amps.In this device, the drain-source breakdown voltage is -100V and VGS=-100V, so the drain-source breakdown voltage is -100V in this case.A device can conduct a maximum continuous current of [52 A] according to its drain current.It is [38 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 130 A.Single MOSFETs transistor is the resistance between the drain and source of a MOSFET when the gate-to-source voltage (VGS) is applied to bias the device to the on state, and Single MOSFETs transistor is 50 mΩ.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.The DS breakdown voltage should be maintained above 100 V to maintain normal operation.To operate this transistor, you will need a 100V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).

IXTQ52P10P Features


the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 52A
a drain-to-source breakdown voltage of -100V voltage
the turn-off delay time is 38 ns
based on its rated peak drain current 130 A.
single MOSFETs transistor is 50 mΩ
a 100V drain to source voltage (Vdss)


IXTQ52P10P Applications


There are a lot of IXYS
IXTQ52P10P applications of single MOSFETs transistors.


  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
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