IXTQ52P10P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Pins :

3

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

ROHS3 Compliant

Lead Free :

Lead Free

Channel Mode :

Enhancement

Transistor Application :

SWITCHING

Transistor Type :

1 P-Channel

Package / Case :

TO-3P-3, SC-65-3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation (Max) :

300W (Tc)

Brand :

IXYS

Length :

15.8 mm

Pin Count :

3

Mounting Style :

Through Hole

Drain-source On Resistance-Max :

0.05 Ω

Transistor Polarity :

P-Channel

Power Dissipation-Max (Abs) :

300 W

Terminal Form :

THROUGH-HOLE

Manufacturer :

IXYS

FET Feature :

--

Polarity/Channel Type :

P-Channel

Min Operating Temperature :

-55 °C

Supplier Device Package :

TO-3P

Product Category :

MOSFET

Additional Feature :

AVALANCHE RATED

Fall Time (Typ) :

22 ns

Drain to Source Breakdown Voltage :

-100V

Turn-Off Delay Time :

38 ns

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Gate to Source Voltage (Vgs) :

20V

Qualification Status :

Not Qualified

Terminal Position :

Single

Height :

20.1 mm

Rise Time :

29ns

Mounting Type :

Through Hole

Current - Continuous Drain (Id) @ 25°C :

52A Tc

DS Breakdown Voltage-Min :

100 V

RoHS :

Compliant

Tradename :

PolarP

Power Dissipation :

300W

JESD-30 Code :

R-PSFM-T3

Series :

PolarP™

Operating Temperature :

-55°C~150°C TJ

Drain Current-Max (Abs) (ID) :

52 A

Reach Compliance Code :

Unknown

Terminal Finish :

PURE TIN

Mount :

Through Hole

Rds On Max :

50 mΩ

Surface Mount :

No

Input Capacitance (Ciss) (Max) @ Vds :

2845pF @ 25V

Vgs (Max) :

±20V

Gate Charge (Qg) (Max) @ Vgs :

60nC @ 10V

Factory Lead Time :

24 Weeks

Resistance :

50mOhm

Minimum Operating Temperature :

- 55 C

Number of Terminations :

3

Input Capacitance :

2.845 nF

Maximum Operating Temperature :

+ 150 C

Case Connection :

DRAIN

Number of Channels :

1 Channel

Avalanche Energy Rating (Eas) :

1500 mJ

Power Dissipation-Max :

300W Tc

Package :

Tube

Max Power Dissipation :

300 W

Pbfree Code :

yes

Product Type :

MOSFET

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Vgs(th) (Max) @ Id :

4.5V @ 250μA

Width :

4.9 mm

Type :

PolarP Power MOSFET

Continuous Drain Current (ID) :

52A

Max Operating Temperature :

150 °C

Element Configuration :

Single

FET Type :

P-Channel

JESD-609 Code :

e3

Product Status :

Active

Drain to Source Resistance :

50 mΩ

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Transistor Element Material :

SILICON

Package Shape :

RECTANGULAR

ECCN Code :

EAR99

Base Product Number :

IXTQ52

Pulsed Drain Current-Max (IDM) :

130 A

Number of Terminals :

3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Configuration :

Single

Published :

2008

Rds On (Max) @ Id, Vgs :

50m Ω @ 500mA, 10V

Packaging :

Tube

Drain to Source Voltage (Vdss) :

100V