IXTQ52N30P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Finish :

Matte Tin (Sn)

Terminal Form :

THROUGH-HOLE

RoHS Status :

ROHS3 Compliant

Avalanche Energy Rating (Eas) :

1000 mJ

RoHS :

Compliant

DS Breakdown Voltage-Min :

300 V

Published :

2006

Package / Case :

TO-3P-3, SC-65-3

Drain to Source Voltage (Vdss) :

300V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Min Operating Temperature :

-55 °C

Minimum Operating Temperature :

- 55 C

Mounting Type :

Through Hole

Base Product Number :

IXTQ52

Continuous Drain Current Id :

52A

Mount :

Through Hole

Factory Lead Time :

24 Weeks

Turn-Off Delay Time :

60 ns

Transistor Application :

SWITCHING

Drain to Source Resistance :

66 mΩ

Additional Feature :

AVALANCHE RATED

Qualification Status :

Not Qualified

Qualification :

-

Current - Continuous Drain (Id) @ 25°C :

52A Tc

FET Type :

N-Channel

Drain Current-Max (Abs) (ID) :

52 A

Max Power Dissipation :

400 W

Input Capacitance (Ciss) (Max) @ Vds :

3490pF @ 25V

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

66m Ω @ 26A, 10V

JESD-30 Code :

R-PSFM-T3

Pbfree Code :

yes

Product Category :

MOSFET

Maximum Operating Temperature :

+ 150 C

Rise Time :

22ns

Terminal Position :

Single

Max Operating Temperature :

150 °C

FET Feature :

--

Number of Channels :

1 Channel

Number of Terminals :

3

Packaging :

Tube

Power Dissipation (Max) :

400W (Tc)

Pulsed Drain Current-Max (IDM) :

150A

Power Dissipation-Max (Abs) :

400 W

Width :

4.9 mm

Product Status :

Active

Gate to Source Voltage (Vgs) :

20V

ECCN Code :

EAR99

Input Capacitance :

3.49 nF

Product Type :

MOSFET

Channel Type :

N Channel

JESD-609 Code :

e3

Continuous Drain Current (ID) :

52A

Case Connection :

DRAIN

Drive Voltage (Max Rds On,Min Rds On) :

10V

Transistor Element Material :

SILICON

Length :

15.8 mm

Package Shape :

RECTANGULAR

Drain-source On Resistance-Max :

0.066Ohm

Power Dissipation :

400W

Rds On Max :

66 mΩ

Element Configuration :

Single

Pin Count :

3

Number of Terminations :

3

Number of Elements :

1

Reach Compliance Code :

Compliant

Power Dissipation-Max :

400W Tc

Series :

PolarHT™

Drain to Source Breakdown Voltage :

300V

Number of Pins :

3

Vgs (Max) :

±20V

Surface Mount :

No

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Polarity/Channel Type :

N-Channel

Vgs(th) (Max) @ Id :

5V @ 250μA

Channel Mode :

Enhancement

Fall Time (Typ) :

20 ns

Supplier Device Package :

TO-3P

Height :

20.3 mm

Brand :

IXYS

Gate Charge (Qg) (Max) @ Vgs :

110nC @ 10V

Manufacturer :

IXYS

Transistor Type :

1 N-Channel

Lead Free :

Lead Free

Mounting Style :

Through Hole

Package :

Tube

Operating Temperature :

-55°C~150°C TJ

Transistor Polarity :

N-Channel

Configuration :

Single