IXTQ50N20P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Mounting Style :

Through Hole

Lead Free :

Lead Free

Mounting Type :

Through Hole

Mount :

Through Hole

Terminal Form :

THROUGH-HOLE

Surface Mount :

No

Base Product Number :

IXTQ50

Number of Terminals :

3

Product Type :

MOSFET

Minimum Operating Temperature :

- 55 C

Terminal Position :

Single

Series :

PolarHT™

Transistor Type :

1 N-Channel

Supplier Device Package :

TO-3P

Maximum Operating Temperature :

+ 175 C

Product Status :

Active

ECCN Code :

EAR99

Drain-source On Resistance-Max :

0.06Ohm

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Channel Type :

N Channel

Power Dissipation-Max (Abs) :

360 W

Case Connection :

DRAIN

Power Dissipation :

360W

Continuous Drain Current (ID) :

50A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Polarity :

N-Channel

Drain Current-Max (Abs) (ID) :

50 A

RoHS :

Details

Vgs (Max) :

±20V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Packaging :

Tube

Number of Channels :

1 Channel

DS Breakdown Voltage-Min :

200 V

Power Dissipation (Max) :

360W (Tc)

Drain to Source Voltage (Vdss) :

200V

Number of Terminations :

3

Type :

PolarHT Power MOSFET

RoHS Status :

ROHS3 Compliant

Manufacturer :

IXYS

Qualification Status :

Not Qualified

Drain to Source Breakdown Voltage :

200V

Product Category :

MOSFET

Continuous Drain Current Id :

50A

Pulsed Drain Current-Max (IDM) :

120A

JESD-609 Code :

e3

Transistor Element Material :

SILICON

Reach Compliance Code :

Compliant

Width :

4.9 mm

Number of Pins :

3

Additional Feature :

AVALANCHE RATED

Tradename :

PolarHT

Polarity/Channel Type :

N-Channel

Factory Lead Time :

24 Weeks

Length :

15.8 mm

Rds On (Max) @ Id, Vgs :

60m Ω @ 50A, 10V

Brand :

IXYS

Operating Mode :

ENHANCEMENT MODE

Pin Count :

3

Operating Temperature :

-55°C~175°C TJ

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Vgs(th) (Max) @ Id :

5V @ 250μA

Terminal Finish :

Matte Tin (Sn)

Input Capacitance (Ciss) (Max) @ Vds :

2720pF @ 25V

Package / Case :

TO-3P-3, SC-65-3

Gate to Source Voltage (Vgs) :

20V

Pbfree Code :

yes

Qualification :

-

Channel Mode :

Enhancement

FET Feature :

--

FET Type :

N-Channel

JESD-30 Code :

R-PSFM-T3

Package Shape :

RECTANGULAR

Published :

2008

Transistor Application :

SWITCHING

Configuration :

Single

Current - Continuous Drain (Id) @ 25°C :

50A Tc

Package :

Tube

Number of Elements :

1

Turn-Off Delay Time :

70 ns

Fall Time (Typ) :

30 ns

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Element Configuration :

Single

Power Dissipation-Max :

360W Tc

Height :

20.3 mm

Rise Time :

35ns

Avalanche Energy Rating (Eas) :

1000 mJ

Gate Charge (Qg) (Max) @ Vgs :

70nC @ 10V