IXTQ48N20T

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

250W Tc

Vgs(th) (Max) @ Id :

4.5V @ 250μA

Reach Compliance Code :

Compliant

Surface Mount :

No

Number of Channels :

1 Channel

Terminal Finish :

Pure Tin (Sn)

Maximum Operating Temperature :

+ 175 C

Avalanche Energy Rating (Eas) :

500 mJ

Product Category :

MOSFET

Transistor Polarity :

N-Channel

Pin Count :

3

RoHS :

Compliant

Vgs (Max) :

±30V

Pbfree Code :

yes

Transistor Type :

1 N-Channel

Operating Temperature :

-55°C~175°C TJ

JESD-30 Code :

R-PSFM-T3

Drain to Source Breakdown Voltage :

200V

ECCN Code :

EAR99

Gate Charge (Qg) (Max) @ Vgs :

60nC @ 10V

Number of Pins :

3

Channel Mode :

Enhancement

Polarity/Channel Type :

N-Channel

Power Dissipation (Max) :

250W (Tc)

Min Operating Temperature :

-55 °C

Mount :

Through Hole

Mounting Type :

Through Hole

DS Breakdown Voltage-Min :

200 V

Turn-Off Delay Time :

46 ns

Input Capacitance (Ciss) (Max) @ Vds :

3090pF @ 25V

Brand :

IXYS

Package :

Tube

Base Product Number :

IXTQ48

Rise Time :

26 ns

Operating Mode :

ENHANCEMENT MODE

Configuration :

Single

Rds On Max :

50 mΩ

Qualification Status :

Not Qualified

Element Configuration :

Single

Power Dissipation-Max (Abs) :

250 W

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Transistor Application :

SWITCHING

Rds On (Max) @ Id, Vgs :

50m Ω @ 24A, 10V

Manufacturer :

IXYS

Drain to Source Resistance :

50 mΩ

FET Type :

N-Channel

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Type :

Trench Power MOSFET

RoHS Status :

ROHS3 Compliant

Package Shape :

RECTANGULAR

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

48A Tc

Case Connection :

DRAIN

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Max Operating Temperature :

175 °C

Drain to Source Voltage (Vdss) :

200V

Drain Current-Max (Abs) (ID) :

48 A

Length :

15.8 mm

Input Capacitance :

3.09 nF

Supplier Device Package :

TO-3P

Continuous Drain Current (ID) :

48A

Width :

4.9 mm

Tradename :

HiPerFET

Height :

20.3 mm

Published :

2010

Packaging :

Tube

Gate to Source Voltage (Vgs) :

30V

Max Power Dissipation :

250 W

Additional Feature :

AVALANCHE RATED

Package / Case :

TO-3P-3, SC-65-3

Terminal Position :

Single

Drain-source On Resistance-Max :

0.05Ohm

Drive Voltage (Max Rds On,Min Rds On) :

10V

Product Type :

MOSFET

Number of Terminals :

3

Product Status :

Active

FET Feature :

--

Pulsed Drain Current-Max (IDM) :

130 A

Number of Terminations :

3

Mounting Style :

Through Hole

Series :

Trench™

Minimum Operating Temperature :

- 55 C

Power Dissipation :

250W

Terminal Form :

THROUGH-HOLE

Peak Reflow Temperature (Cel) :

NOT SPECIFIED