IXTQ470P2
- Mfr.Part #
- IXTQ470P2
- Manufacturer
- Littelfuse
- Package / Case
- TO-3P-3, SC-65-3
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 42A TO3P
- Stock
- 13,494
- In Stock :
- 13,494
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Product Status :
- Active
- Product Type :
- MOSFET
- Number of Terminations :
- 3
- Current - Continuous Drain (Id) @ 25°C :
- 42A Tc
- Manufacturer :
- IXYS
- Package Shape :
- RECTANGULAR
- Package :
- Tube
- JESD-30 Code :
- R-PSFM-T3
- Mounting Type :
- Through Hole
- Supplier Device Package :
- TO-3P
- Drain Current-Max (Abs) (ID) :
- 42 A
- Lead Free :
- Lead Free
- Power Dissipation-Max :
- 830W Tc
- Operating Temperature :
- -55°C~150°C TJ
- Drain to Source Voltage (Vdss) :
- 500V
- Vgs(th) (Max) @ Id :
- 4.5V @ 250μA
- Pin Count :
- 3
- RoHS Status :
- ROHS3 Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Configuration :
- Single
- Terminal Form :
- THROUGH-HOLE
- Brand :
- IXYS
- Number of Channels :
- 1 Channel
- Surface Mount :
- No
- Factory Lead Time :
- 24 Weeks
- Power Dissipation-Max (Abs) :
- 830 W
- FET Type :
- N-Channel
- Number of Terminals :
- 3
- Number of Elements :
- 1
- Type :
- PolarP2 Power MOSFET
- Gate Charge (Qg) (Max) @ Vgs :
- 88nC @ 10V
- Packaging :
- Tube
- Operating Mode :
- ENHANCEMENT MODE
- Vgs (Max) :
- ±30V
- Transistor Type :
- 1 N-Channel
- RoHS :
- Details
- Product Category :
- MOSFET
- Gate to Source Voltage (Vgs) :
- 30V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- DS Breakdown Voltage-Min :
- 500 V
- Terminal Position :
- Single
- Base Product Number :
- IXTQ470
- Maximum Operating Temperature :
- + 150 C
- Mounting Style :
- Through Hole
- Transistor Application :
- SWITCHING
- Minimum Operating Temperature :
- - 55 C
- Published :
- 2010
- Reach Compliance Code :
- Compliant
- Polarity/Channel Type :
- N-Channel
- Transistor Element Material :
- SILICON
- Series :
- PolarP2™
- Rds On (Max) @ Id, Vgs :
- 145m Ω @ 500mA, 10V
- Mount :
- Through Hole
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Drain-source On Resistance-Max :
- 0.145Ohm
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Element Configuration :
- Single
- Power Dissipation (Max) :
- 830W (Tc)
- Transistor Polarity :
- N-Channel
- Package / Case :
- TO-3P-3, SC-65-3
- Terminal Finish :
- Pure Tin (Sn)
- Input Capacitance (Ciss) (Max) @ Vds :
- 5400pF @ 25V
- Additional Feature :
- AVALANCHE RATED
- Case Connection :
- DRAIN
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Qualification Status :
- Not Qualified
- Drain to Source Breakdown Voltage :
- 500V
- Continuous Drain Current (ID) :
- 42A
- FET Feature :
- --
- Pbfree Code :
- yes
- Pulsed Drain Current-Max (IDM) :
- 126A
- Power Dissipation :
- 830W
- Tradename :
- Polar2 HiPerFET
- Avalanche Energy Rating (Eas) :
- 1300 mJ
- Datasheets
- IXTQ470P2

N-Channel Tube 145m Ω @ 500mA, 10V ±30V 5400pF @ 25V 88nC @ 10V 500V TO-3P-3, SC-65-3
IXTQ470P2 Overview
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 1300 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 5400pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 42A.With a drain-source breakdown voltage of 500V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 500V.42 A is the drain current of this device, which is the maximum continuous current transistor can carry.Peak drain current for this device is 126A, which is its maximum pulsed drain current.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.To maintain normal operation, the DS breakdown voltage should be kept above 500 V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 500V.Using drive voltage (10V) reduces this device's overall power consumption.
IXTQ470P2 Features
the avalanche energy rating (Eas) is 1300 mJ
a continuous drain current (ID) of 42A
a drain-to-source breakdown voltage of 500V voltage
based on its rated peak drain current 126A.
a 500V drain to source voltage (Vdss)
IXTQ470P2 Applications
There are a lot of IXYS
IXTQ470P2 applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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