IXTQ470P2

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Position :

Single

Pulsed Drain Current-Max (IDM) :

126A

Power Dissipation :

830W

Case Connection :

DRAIN

DS Breakdown Voltage-Min :

500 V

Element Configuration :

Single

RoHS :

Details

Number of Elements :

1

Series :

PolarP2™

Product Status :

Active

Maximum Operating Temperature :

+ 150 C

Additional Feature :

AVALANCHE RATED

Mounting Type :

Through Hole

Transistor Polarity :

N-Channel

Power Dissipation-Max :

830W Tc

Power Dissipation (Max) :

830W (Tc)

Current - Continuous Drain (Id) @ 25°C :

42A Tc

Continuous Drain Current (ID) :

42A

Drain to Source Voltage (Vdss) :

500V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Mounting Style :

Through Hole

Factory Lead Time :

24 Weeks

JESD-30 Code :

R-PSFM-T3

Surface Mount :

No

Product Type :

MOSFET

Number of Channels :

1 Channel

Base Product Number :

IXTQ470

Qualification Status :

Not Qualified

Number of Terminals :

3

Published :

2010

Package Shape :

RECTANGULAR

Reach Compliance Code :

Compliant

Product Category :

MOSFET

Pin Count :

3

Package :

Tube

Gate to Source Voltage (Vgs) :

30V

Number of Terminations :

3

Minimum Operating Temperature :

- 55 C

Packaging :

Tube

Supplier Device Package :

TO-3P

Manufacturer :

IXYS

Drain-source On Resistance-Max :

0.145Ohm

Gate Charge (Qg) (Max) @ Vgs :

88nC @ 10V

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max (Abs) :

830 W

Drain to Source Breakdown Voltage :

500V

Package / Case :

TO-3P-3, SC-65-3

Drain Current-Max (Abs) (ID) :

42 A

Drive Voltage (Max Rds On,Min Rds On) :

10V

Rds On (Max) @ Id, Vgs :

145m Ω @ 500mA, 10V

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

4.5V @ 250μA

Type :

PolarP2 Power MOSFET

Mount :

Through Hole

Tradename :

Polar2 HiPerFET

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Pbfree Code :

yes

Brand :

IXYS

Terminal Form :

THROUGH-HOLE

Input Capacitance (Ciss) (Max) @ Vds :

5400pF @ 25V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

N-Channel

Operating Temperature :

-55°C~150°C TJ

Avalanche Energy Rating (Eas) :

1300 mJ

Polarity/Channel Type :

N-Channel

Transistor Element Material :

SILICON

Terminal Finish :

Pure Tin (Sn)

Transistor Type :

1 N-Channel

Configuration :

Single

Lead Free :

Lead Free

FET Feature :

--

RoHS Status :

ROHS3 Compliant

Vgs (Max) :

±30V

FET Technology :

METAL-OXIDE SEMICONDUCTOR