IXTQ460P2
- Mfr.Part #
- IXTQ460P2
- Manufacturer
- Littelfuse
- Package / Case
- TO-3P-3, SC-65-3
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 24A TO3P
- Stock
- 390
- In Stock :
- 390
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drain Current-Max (Abs) (ID) :
- 24 A
- Pbfree Code :
- yes
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- RoHS Status :
- ROHS3 Compliant
- Drain to Source Breakdown Voltage :
- 500V
- Product Status :
- Active
- Channel Type :
- N Channel
- Product Category :
- MOSFET
- Power Dissipation-Max (Abs) :
- 480 W
- Terminal Position :
- Single
- Supplier Device Package :
- TO-3P
- Minimum Operating Temperature :
- - 55 C
- Package Shape :
- RECTANGULAR
- Transistor Application :
- SWITCHING
- Terminal Finish :
- Pure Tin (Sn)
- Vgs (Max) :
- ±30V
- Input Capacitance (Ciss) (Max) @ Vds :
- 2890pF @ 25V
- Power Dissipation-Max :
- 480W Tc
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Product Type :
- MOSFET
- Qualification :
- -
- Surface Mount :
- No
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Series :
- PolarP2™
- Continuous Drain Current Id :
- 24A
- Rds On (Max) @ Id, Vgs :
- 270m Ω @ 12A, 10V
- Package :
- Tube
- FET Feature :
- --
- Tradename :
- Polar2 HiPerFET
- Current - Continuous Drain (Id) @ 25°C :
- 24A Tc
- Type :
- PolarP2 Power MOSFET
- Mounting Style :
- Through Hole
- Base Product Number :
- IXTQ460
- Gate to Source Voltage (Vgs) :
- 30V
- Factory Lead Time :
- 24 Weeks
- Mounting Type :
- Through Hole
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Polarity/Channel Type :
- N-Channel
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Reach Compliance Code :
- Compliant
- Mount :
- Through Hole
- Power Dissipation :
- 480W
- Operating Mode :
- ENHANCEMENT MODE
- JESD-30 Code :
- R-PSFM-T3
- Element Configuration :
- Single
- Number of Elements :
- 1
- Case Connection :
- DRAIN
- Published :
- 2010
- FET Type :
- N-Channel
- Transistor Type :
- 1 N-Channel
- Brand :
- IXYS
- Gate Charge (Qg) (Max) @ Vgs :
- 48nC @ 10V
- Power Dissipation (Max) :
- 480W (Tc)
- RoHS :
- Details
- Drain-source On Resistance-Max :
- 0.27Ohm
- Operating Temperature :
- -55°C~150°C TJ
- Channel Mode :
- Enhancement
- Packaging :
- Tube
- Qualification Status :
- Not Qualified
- Vgs(th) (Max) @ Id :
- 4.5V @ 250μA
- DS Breakdown Voltage-Min :
- 500 V
- Additional Feature :
- AVALANCHE RATED
- Number of Channels :
- 1 Channel
- Transistor Element Material :
- SILICON
- Pulsed Drain Current-Max (IDM) :
- 50A
- Configuration :
- Single
- Terminal Form :
- THROUGH-HOLE
- Manufacturer :
- IXYS
- Pin Count :
- 3
- Avalanche Energy Rating (Eas) :
- 750 mJ
- Number of Terminations :
- 3
- Drain to Source Voltage (Vdss) :
- 500V
- Transistor Polarity :
- N-Channel
- Continuous Drain Current (ID) :
- 24A
- Number of Terminals :
- 3
- Package / Case :
- TO-3P-3, SC-65-3
- Lead Free :
- Lead Free
- Maximum Operating Temperature :
- + 150 C
- Datasheets
- IXTQ460P2

N-Channel Tube 270m Ω @ 12A, 10V ±30V 2890pF @ 25V 48nC @ 10V 500V TO-3P-3, SC-65-3
IXTQ460P2 Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 750 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 2890pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 24A amps.In this device, the drain-source breakdown voltage is 500V and VGS=500V, so the drain-source breakdown voltage is 500V in this case.A device can conduct a maximum continuous current of [24 A] according to its drain current.As far as peak drain current is concerned, its maximum pulsed current is 50A.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.The DS breakdown voltage should be maintained above 500 V to maintain normal operation.To operate this transistor, you will need a 500V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).
IXTQ460P2 Features
the avalanche energy rating (Eas) is 750 mJ
a continuous drain current (ID) of 24A
a drain-to-source breakdown voltage of 500V voltage
based on its rated peak drain current 50A.
a 500V drain to source voltage (Vdss)
IXTQ460P2 Applications
There are a lot of IXYS
IXTQ460P2 applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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