IXTQ460P2

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Mfr.Part #
IXTQ460P2
Manufacturer
Littelfuse
Package / Case
TO-3P-3, SC-65-3
Datasheet
Download
Description
MOSFET N-CH 500V 24A TO3P
Stock
390
In Stock :
390

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Drain Current-Max (Abs) (ID) :
24 A
Pbfree Code :
yes
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
RoHS Status :
ROHS3 Compliant
Drain to Source Breakdown Voltage :
500V
Product Status :
Active
Channel Type :
N Channel
Product Category :
MOSFET
Power Dissipation-Max (Abs) :
480 W
Terminal Position :
Single
Supplier Device Package :
TO-3P
Minimum Operating Temperature :
- 55 C
Package Shape :
RECTANGULAR
Transistor Application :
SWITCHING
Terminal Finish :
Pure Tin (Sn)
Vgs (Max) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
2890pF @ 25V
Power Dissipation-Max :
480W Tc
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Product Type :
MOSFET
Qualification :
-
Surface Mount :
No
Drive Voltage (Max Rds On,Min Rds On) :
10V
Series :
PolarP2™
Continuous Drain Current Id :
24A
Rds On (Max) @ Id, Vgs :
270m Ω @ 12A, 10V
Package :
Tube
FET Feature :
--
Tradename :
Polar2 HiPerFET
Current - Continuous Drain (Id) @ 25°C :
24A Tc
Type :
PolarP2 Power MOSFET
Mounting Style :
Through Hole
Base Product Number :
IXTQ460
Gate to Source Voltage (Vgs) :
30V
Factory Lead Time :
24 Weeks
Mounting Type :
Through Hole
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Polarity/Channel Type :
N-Channel
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Reach Compliance Code :
Compliant
Mount :
Through Hole
Power Dissipation :
480W
Operating Mode :
ENHANCEMENT MODE
JESD-30 Code :
R-PSFM-T3
Element Configuration :
Single
Number of Elements :
1
Case Connection :
DRAIN
Published :
2010
FET Type :
N-Channel
Transistor Type :
1 N-Channel
Brand :
IXYS
Gate Charge (Qg) (Max) @ Vgs :
48nC @ 10V
Power Dissipation (Max) :
480W (Tc)
RoHS :
Details
Drain-source On Resistance-Max :
0.27Ohm
Operating Temperature :
-55°C~150°C TJ
Channel Mode :
Enhancement
Packaging :
Tube
Qualification Status :
Not Qualified
Vgs(th) (Max) @ Id :
4.5V @ 250μA
DS Breakdown Voltage-Min :
500 V
Additional Feature :
AVALANCHE RATED
Number of Channels :
1 Channel
Transistor Element Material :
SILICON
Pulsed Drain Current-Max (IDM) :
50A
Configuration :
Single
Terminal Form :
THROUGH-HOLE
Manufacturer :
IXYS
Pin Count :
3
Avalanche Energy Rating (Eas) :
750 mJ
Number of Terminations :
3
Drain to Source Voltage (Vdss) :
500V
Transistor Polarity :
N-Channel
Continuous Drain Current (ID) :
24A
Number of Terminals :
3
Package / Case :
TO-3P-3, SC-65-3
Lead Free :
Lead Free
Maximum Operating Temperature :
+ 150 C
Datasheets
IXTQ460P2
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTQ460P2 from Chip IC,where excellence meets affordability. This product stands out with its Type:PolarP2 Power MOSFET, Mounting Type:Through Hole, Operating Temperature:-55°C~150°C TJ, Number of Channels:1 Channel, Number of Terminations:3, Package / Case:TO-3P-3, SC-65-3, IXTQ460P2 pinout, IXTQ460P2 datasheet PDF, IXTQ460P2 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTQ460P2 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTQ460P2


N-Channel Tube 270m Ω @ 12A, 10V ±30V 2890pF @ 25V 48nC @ 10V 500V TO-3P-3, SC-65-3

IXTQ460P2 Overview


There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 750 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 2890pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 24A amps.In this device, the drain-source breakdown voltage is 500V and VGS=500V, so the drain-source breakdown voltage is 500V in this case.A device can conduct a maximum continuous current of [24 A] according to its drain current.As far as peak drain current is concerned, its maximum pulsed current is 50A.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.The DS breakdown voltage should be maintained above 500 V to maintain normal operation.To operate this transistor, you will need a 500V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).

IXTQ460P2 Features


the avalanche energy rating (Eas) is 750 mJ
a continuous drain current (ID) of 24A
a drain-to-source breakdown voltage of 500V voltage
based on its rated peak drain current 50A.
a 500V drain to source voltage (Vdss)


IXTQ460P2 Applications


There are a lot of IXYS
IXTQ460P2 applications of single MOSFETs transistors.


  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
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