IXTQ450P2
- Mfr.Part #
- IXTQ450P2
- Manufacturer
- Littelfuse
- Package / Case
- TO-3P-3, SC-65-3
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 16A TO3P
- Stock
- 43
- In Stock :
- 43
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Package / Case :
- TO-3P-3, SC-65-3
- DS Breakdown Voltage-Min :
- 500 V
- Pbfree Code :
- yes
- Avalanche Energy Rating (Eas) :
- 750 mJ
- Number of Channels :
- 1 Channel
- Manufacturer :
- IXYS
- Terminal Form :
- THROUGH-HOLE
- Number of Terminations :
- 3
- FET Type :
- N-Channel
- Pulsed Drain Current-Max (IDM) :
- 35A
- Polarity/Channel Type :
- N-Channel
- Supplier Device Package :
- TO-3P
- Brand :
- IXYS
- Transistor Polarity :
- N-Channel
- Vgs (Max) :
- ±30V
- Drain to Source Voltage (Vdss) :
- 500V
- Number of Elements :
- 1
- Tradename :
- Polar2 HiPerFET
- Gate to Source Voltage (Vgs) :
- 30V
- Current - Continuous Drain (Id) @ 25°C :
- 16A Tc
- Power Dissipation :
- 300W
- Package :
- Tube
- Channel Mode :
- Enhancement
- RoHS Status :
- ROHS3 Compliant
- JESD-609 Code :
- e3
- Continuous Drain Current (ID) :
- 16A
- Number of Terminals :
- 3
- Element Configuration :
- Single
- Operating Temperature :
- -55°C~150°C TJ
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Vgs(th) (Max) @ Id :
- 4.5V @ 250μA
- Qualification Status :
- Not Qualified
- Pin Count :
- 3
- Power Dissipation-Max :
- 300W Tc
- Mounting Style :
- Through Hole
- Gate Charge (Qg) (Max) @ Vgs :
- 43nC @ 10V
- Factory Lead Time :
- 24 Weeks
- Power Dissipation (Max) :
- 300W (Tc)
- Type :
- PolarP2 Power MOSFET
- Rds On (Max) @ Id, Vgs :
- 330m Ω @ 8A, 10V
- RoHS :
- Details
- Reach Compliance Code :
- Unknown
- Product Status :
- Active
- Terminal Position :
- Single
- Case Connection :
- DRAIN
- Mounting Type :
- Through Hole
- Minimum Operating Temperature :
- - 55 C
- FET Feature :
- --
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Additional Feature :
- AVALANCHE RATED
- Drain to Source Breakdown Voltage :
- 500V
- Input Capacitance (Ciss) (Max) @ Vds :
- 2530pF @ 25V
- Transistor Type :
- 1 N-Channel
- Product Category :
- MOSFET
- Drain Current-Max (Abs) (ID) :
- 16 A
- JESD-30 Code :
- R-PSFM-T3
- Package Shape :
- RECTANGULAR
- Mount :
- Through Hole
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Transistor Application :
- SWITCHING
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Tube
- Published :
- 2011
- Operating Mode :
- ENHANCEMENT MODE
- Terminal Finish :
- PURE TIN
- Maximum Operating Temperature :
- + 150 C
- Series :
- PolarP2™
- Power Dissipation-Max (Abs) :
- 300 W
- Product Type :
- MOSFET
- Transistor Element Material :
- SILICON
- Drain-source On Resistance-Max :
- 0.33Ohm
- Configuration :
- Single
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Surface Mount :
- No
- Base Product Number :
- IXTQ450
- Datasheets
- IXTQ450P2

N-Channel Tube 330m Ω @ 8A, 10V ±30V 2530pF @ 25V 43nC @ 10V 500V TO-3P-3, SC-65-3
IXTQ450P2 Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 750 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 2530pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 16A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 500V, and this device has a drainage-to-source breakdown voltage of 500VV.Drain current refers to the maximum continuous current a device can conduct, and it is 16 A.Peak drain current is 35A, which is the maximum pulsed drain current.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 30V to 1.Normal operation requires that the DS breakdown voltage remain above 500 V.For this transistor to work, a voltage 500V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
IXTQ450P2 Features
the avalanche energy rating (Eas) is 750 mJ
a continuous drain current (ID) of 16A
a drain-to-source breakdown voltage of 500V voltage
based on its rated peak drain current 35A.
a 500V drain to source voltage (Vdss)
IXTQ450P2 Applications
There are a lot of IXYS
IXTQ450P2 applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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