IXTQ450P2
- Mfr.Part #
- IXTQ450P2
- Manufacturer
- Littelfuse
- Package / Case
- TO-3P-3, SC-65-3
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 16A TO3P
- Stock
- 43
- In Stock :
- 43
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Input Capacitance (Ciss) (Max) @ Vds :
- 2530pF @ 25V
- Additional Feature :
- AVALANCHE RATED
- Drain to Source Voltage (Vdss) :
- 500V
- FET Type :
- N-Channel
- Surface Mount :
- No
- Polarity/Channel Type :
- N-Channel
- Pulsed Drain Current-Max (IDM) :
- 35A
- Operating Mode :
- ENHANCEMENT MODE
- Transistor Element Material :
- SILICON
- Package :
- Tube
- Element Configuration :
- Single
- Channel Mode :
- Enhancement
- Continuous Drain Current (ID) :
- 16A
- Rds On (Max) @ Id, Vgs :
- 330m Ω @ 8A, 10V
- Avalanche Energy Rating (Eas) :
- 750 mJ
- Gate to Source Voltage (Vgs) :
- 30V
- Package / Case :
- TO-3P-3, SC-65-3
- Mount :
- Through Hole
- Terminal Finish :
- PURE TIN
- Supplier Device Package :
- TO-3P
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Type :
- PolarP2 Power MOSFET
- DS Breakdown Voltage-Min :
- 500 V
- Product Category :
- MOSFET
- RoHS :
- Details
- Package Shape :
- RECTANGULAR
- Minimum Operating Temperature :
- - 55 C
- Number of Terminations :
- 3
- Pin Count :
- 3
- Vgs (Max) :
- ±30V
- Power Dissipation (Max) :
- 300W (Tc)
- Transistor Type :
- 1 N-Channel
- Current - Continuous Drain (Id) @ 25°C :
- 16A Tc
- Drain to Source Breakdown Voltage :
- 500V
- Operating Temperature :
- -55°C~150°C TJ
- Maximum Operating Temperature :
- + 150 C
- Terminal Position :
- Single
- Terminal Form :
- THROUGH-HOLE
- Qualification Status :
- Not Qualified
- Number of Terminals :
- 3
- Power Dissipation-Max (Abs) :
- 300 W
- Mounting Type :
- Through Hole
- FET Feature :
- --
- Transistor Polarity :
- N-Channel
- Packaging :
- Tube
- Power Dissipation-Max :
- 300W Tc
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Product Status :
- Active
- Published :
- 2011
- Power Dissipation :
- 300W
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- JESD-609 Code :
- e3
- Tradename :
- Polar2 HiPerFET
- Transistor Application :
- SWITCHING
- Reach Compliance Code :
- Unknown
- JESD-30 Code :
- R-PSFM-T3
- Product Type :
- MOSFET
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Brand :
- IXYS
- Manufacturer :
- IXYS
- Mounting Style :
- Through Hole
- Case Connection :
- DRAIN
- Vgs(th) (Max) @ Id :
- 4.5V @ 250μA
- Factory Lead Time :
- 24 Weeks
- Base Product Number :
- IXTQ450
- Drain Current-Max (Abs) (ID) :
- 16 A
- Drain-source On Resistance-Max :
- 0.33Ohm
- Configuration :
- Single
- RoHS Status :
- ROHS3 Compliant
- Number of Channels :
- 1 Channel
- Pbfree Code :
- yes
- Series :
- PolarP2™
- Gate Charge (Qg) (Max) @ Vgs :
- 43nC @ 10V
- Number of Elements :
- 1
- Datasheets
- IXTQ450P2

N-Channel Tube 330m Ω @ 8A, 10V ±30V 2530pF @ 25V 43nC @ 10V 500V TO-3P-3, SC-65-3
IXTQ450P2 Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 750 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 2530pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 16A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 500V, and this device has a drainage-to-source breakdown voltage of 500VV.Drain current refers to the maximum continuous current a device can conduct, and it is 16 A.Peak drain current is 35A, which is the maximum pulsed drain current.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 30V to 1.Normal operation requires that the DS breakdown voltage remain above 500 V.For this transistor to work, a voltage 500V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
IXTQ450P2 Features
the avalanche energy rating (Eas) is 750 mJ
a continuous drain current (ID) of 16A
a drain-to-source breakdown voltage of 500V voltage
based on its rated peak drain current 35A.
a 500V drain to source voltage (Vdss)
IXTQ450P2 Applications
There are a lot of IXYS
IXTQ450P2 applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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