IXTQ450P2

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Mfr.Part #
IXTQ450P2
Manufacturer
Littelfuse
Package / Case
TO-3P-3, SC-65-3
Datasheet
Download
Description
MOSFET N-CH 500V 16A TO3P
Stock
43
In Stock :
43

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Input Capacitance (Ciss) (Max) @ Vds :
2530pF @ 25V
Additional Feature :
AVALANCHE RATED
Drain to Source Voltage (Vdss) :
500V
FET Type :
N-Channel
Surface Mount :
No
Polarity/Channel Type :
N-Channel
Pulsed Drain Current-Max (IDM) :
35A
Operating Mode :
ENHANCEMENT MODE
Transistor Element Material :
SILICON
Package :
Tube
Element Configuration :
Single
Channel Mode :
Enhancement
Continuous Drain Current (ID) :
16A
Rds On (Max) @ Id, Vgs :
330m Ω @ 8A, 10V
Avalanche Energy Rating (Eas) :
750 mJ
Gate to Source Voltage (Vgs) :
30V
Package / Case :
TO-3P-3, SC-65-3
Mount :
Through Hole
Terminal Finish :
PURE TIN
Supplier Device Package :
TO-3P
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Type :
PolarP2 Power MOSFET
DS Breakdown Voltage-Min :
500 V
Product Category :
MOSFET
RoHS :
Details
Package Shape :
RECTANGULAR
Minimum Operating Temperature :
- 55 C
Number of Terminations :
3
Pin Count :
3
Vgs (Max) :
±30V
Power Dissipation (Max) :
300W (Tc)
Transistor Type :
1 N-Channel
Current - Continuous Drain (Id) @ 25°C :
16A Tc
Drain to Source Breakdown Voltage :
500V
Operating Temperature :
-55°C~150°C TJ
Maximum Operating Temperature :
+ 150 C
Terminal Position :
Single
Terminal Form :
THROUGH-HOLE
Qualification Status :
Not Qualified
Number of Terminals :
3
Power Dissipation-Max (Abs) :
300 W
Mounting Type :
Through Hole
FET Feature :
--
Transistor Polarity :
N-Channel
Packaging :
Tube
Power Dissipation-Max :
300W Tc
Drive Voltage (Max Rds On,Min Rds On) :
10V
Product Status :
Active
Published :
2011
Power Dissipation :
300W
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
JESD-609 Code :
e3
Tradename :
Polar2 HiPerFET
Transistor Application :
SWITCHING
Reach Compliance Code :
Unknown
JESD-30 Code :
R-PSFM-T3
Product Type :
MOSFET
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Brand :
IXYS
Manufacturer :
IXYS
Mounting Style :
Through Hole
Case Connection :
DRAIN
Vgs(th) (Max) @ Id :
4.5V @ 250μA
Factory Lead Time :
24 Weeks
Base Product Number :
IXTQ450
Drain Current-Max (Abs) (ID) :
16 A
Drain-source On Resistance-Max :
0.33Ohm
Configuration :
Single
RoHS Status :
ROHS3 Compliant
Number of Channels :
1 Channel
Pbfree Code :
yes
Series :
PolarP2™
Gate Charge (Qg) (Max) @ Vgs :
43nC @ 10V
Number of Elements :
1
Datasheets
IXTQ450P2
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTQ450P2 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-3P-3, SC-65-3, Type:PolarP2 Power MOSFET, Number of Terminations:3, Operating Temperature:-55°C~150°C TJ, Mounting Type:Through Hole, Number of Channels:1 Channel, IXTQ450P2 pinout, IXTQ450P2 datasheet PDF, IXTQ450P2 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTQ450P2 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTQ450P2


N-Channel Tube 330m Ω @ 8A, 10V ±30V 2530pF @ 25V 43nC @ 10V 500V TO-3P-3, SC-65-3

IXTQ450P2 Overview


The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 750 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 2530pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 16A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 500V, and this device has a drainage-to-source breakdown voltage of 500VV.Drain current refers to the maximum continuous current a device can conduct, and it is 16 A.Peak drain current is 35A, which is the maximum pulsed drain current.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 30V to 1.Normal operation requires that the DS breakdown voltage remain above 500 V.For this transistor to work, a voltage 500V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.

IXTQ450P2 Features


the avalanche energy rating (Eas) is 750 mJ
a continuous drain current (ID) of 16A
a drain-to-source breakdown voltage of 500V voltage
based on its rated peak drain current 35A.
a 500V drain to source voltage (Vdss)


IXTQ450P2 Applications


There are a lot of IXYS
IXTQ450P2 applications of single MOSFETs transistors.


  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
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