IXTQ450P2

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Mfr.Part #
IXTQ450P2
Manufacturer
Littelfuse
Package / Case
TO-3P-3, SC-65-3
Datasheet
Download
Description
MOSFET N-CH 500V 16A TO3P
Stock
43
In Stock :
43

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Package / Case :
TO-3P-3, SC-65-3
DS Breakdown Voltage-Min :
500 V
Pbfree Code :
yes
Avalanche Energy Rating (Eas) :
750 mJ
Number of Channels :
1 Channel
Manufacturer :
IXYS
Terminal Form :
THROUGH-HOLE
Number of Terminations :
3
FET Type :
N-Channel
Pulsed Drain Current-Max (IDM) :
35A
Polarity/Channel Type :
N-Channel
Supplier Device Package :
TO-3P
Brand :
IXYS
Transistor Polarity :
N-Channel
Vgs (Max) :
±30V
Drain to Source Voltage (Vdss) :
500V
Number of Elements :
1
Tradename :
Polar2 HiPerFET
Gate to Source Voltage (Vgs) :
30V
Current - Continuous Drain (Id) @ 25°C :
16A Tc
Power Dissipation :
300W
Package :
Tube
Channel Mode :
Enhancement
RoHS Status :
ROHS3 Compliant
JESD-609 Code :
e3
Continuous Drain Current (ID) :
16A
Number of Terminals :
3
Element Configuration :
Single
Operating Temperature :
-55°C~150°C TJ
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Vgs(th) (Max) @ Id :
4.5V @ 250μA
Qualification Status :
Not Qualified
Pin Count :
3
Power Dissipation-Max :
300W Tc
Mounting Style :
Through Hole
Gate Charge (Qg) (Max) @ Vgs :
43nC @ 10V
Factory Lead Time :
24 Weeks
Power Dissipation (Max) :
300W (Tc)
Type :
PolarP2 Power MOSFET
Rds On (Max) @ Id, Vgs :
330m Ω @ 8A, 10V
RoHS :
Details
Reach Compliance Code :
Unknown
Product Status :
Active
Terminal Position :
Single
Case Connection :
DRAIN
Mounting Type :
Through Hole
Minimum Operating Temperature :
- 55 C
FET Feature :
--
Drive Voltage (Max Rds On,Min Rds On) :
10V
Additional Feature :
AVALANCHE RATED
Drain to Source Breakdown Voltage :
500V
Input Capacitance (Ciss) (Max) @ Vds :
2530pF @ 25V
Transistor Type :
1 N-Channel
Product Category :
MOSFET
Drain Current-Max (Abs) (ID) :
16 A
JESD-30 Code :
R-PSFM-T3
Package Shape :
RECTANGULAR
Mount :
Through Hole
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Transistor Application :
SWITCHING
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Packaging :
Tube
Published :
2011
Operating Mode :
ENHANCEMENT MODE
Terminal Finish :
PURE TIN
Maximum Operating Temperature :
+ 150 C
Series :
PolarP2™
Power Dissipation-Max (Abs) :
300 W
Product Type :
MOSFET
Transistor Element Material :
SILICON
Drain-source On Resistance-Max :
0.33Ohm
Configuration :
Single
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Surface Mount :
No
Base Product Number :
IXTQ450
Datasheets
IXTQ450P2
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTQ450P2 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-3P-3, SC-65-3, Number of Channels:1 Channel, Number of Terminations:3, Operating Temperature:-55°C~150°C TJ, Type:PolarP2 Power MOSFET, Mounting Type:Through Hole, IXTQ450P2 pinout, IXTQ450P2 datasheet PDF, IXTQ450P2 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTQ450P2 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTQ450P2


N-Channel Tube 330m Ω @ 8A, 10V ±30V 2530pF @ 25V 43nC @ 10V 500V TO-3P-3, SC-65-3

IXTQ450P2 Overview


The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 750 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 2530pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 16A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 500V, and this device has a drainage-to-source breakdown voltage of 500VV.Drain current refers to the maximum continuous current a device can conduct, and it is 16 A.Peak drain current is 35A, which is the maximum pulsed drain current.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 30V to 1.Normal operation requires that the DS breakdown voltage remain above 500 V.For this transistor to work, a voltage 500V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.

IXTQ450P2 Features


the avalanche energy rating (Eas) is 750 mJ
a continuous drain current (ID) of 16A
a drain-to-source breakdown voltage of 500V voltage
based on its rated peak drain current 35A.
a 500V drain to source voltage (Vdss)


IXTQ450P2 Applications


There are a lot of IXYS
IXTQ450P2 applications of single MOSFETs transistors.


  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
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