IXTQ44N50P

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Mfr.Part #
IXTQ44N50P
Manufacturer
Littelfuse
Package / Case
TO-3P-3, SC-65-3
Datasheet
Download
Description
MOSFET N-CH 500V 44A TO3P
Stock
11,616
In Stock :
11,616

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
JESD-609 Code :
e3
DS Breakdown Voltage-Min :
500 V
Product Type :
MOSFET
Channel Mode :
Enhancement
Input Capacitance (Ciss) (Max) @ Vds :
5440pF @ 25V
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Number of Terminations :
3
Packaging :
Tube
Fall Time (Typ) :
21 ns
Subcategory :
MOSFETs
Current - Continuous Drain (Id) @ 25°C :
44A Tc
Manufacturer :
IXYS
Length :
15.8 mm
Avalanche Energy Rating (Eas) :
1700 mJ
FET Type :
N-Channel
Number of Pins :
3
Product Category :
MOSFET
Power Dissipation (Max) :
658W (Tc)
Drain to Source Breakdown Voltage :
500V
Minimum Operating Temperature :
- 55 C
Surface Mount :
No
JESD-30 Code :
R-PSFM-T3
Published :
2006
Additional Feature :
AVALANCHE RATED
Drain-source On Resistance-Max :
0.14Ohm
Qualification Status :
Not Qualified
Turn-Off Delay Time :
75 ns
Package Shape :
RECTANGULAR
Package / Case :
TO-3P-3, SC-65-3
Power Dissipation :
650W
Transistor Application :
SWITCHING
Series :
PolarHV™
Transistor Element Material :
SILICON
Drive Voltage (Max Rds On,Min Rds On) :
10V
Power Dissipation-Max :
658W Tc
Transistor Type :
1 N-Channel
Mount :
Through Hole
Terminal Position :
Single
Pulsed Drain Current-Max (IDM) :
110A
Height :
20.3 mm
Transistor Polarity :
N-Channel
Maximum Operating Temperature :
+ 150 C
Pin Count :
3
Polarity/Channel Type :
N-Channel
Supplier Device Package :
TO-3P
Gate to Source Voltage (Vgs) :
30V
Number of Channels :
1 Channel
Rise Time :
27ns
Package :
Tube
Vgs (Max) :
±30V
FET Feature :
--
Configuration :
Single
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Number of Elements :
1
Terminal Form :
THROUGH-HOLE
Operating Mode :
ENHANCEMENT MODE
Mounting Style :
Through Hole
Vgs(th) (Max) @ Id :
5V @ 250μA
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Number of Terminals :
3
Pbfree Code :
yes
Product Status :
Active
Rds On (Max) @ Id, Vgs :
140m Ω @ 22A, 10V
Brand :
IXYS
Mounting Type :
Through Hole
Reach Compliance Code :
Unknown
Operating Temperature :
-55°C~150°C TJ
Gate Charge (Qg) (Max) @ Vgs :
98nC @ 10V
Element Configuration :
Single
Drain to Source Voltage (Vdss) :
500V
Case Connection :
DRAIN
Continuous Drain Current (ID) :
44A
RoHS :
Details
Base Product Number :
IXTQ44
Factory Lead Time :
24 Weeks
Terminal Finish :
Matte Tin (Sn)
Width :
4.9 mm
RoHS Status :
ROHS3 Compliant
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Datasheets
IXTQ44N50P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTQ44N50P from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Number of Pins:3, Package / Case:TO-3P-3, SC-65-3, Number of Channels:1 Channel, Mounting Type:Through Hole, Operating Temperature:-55°C~150°C TJ, IXTQ44N50P pinout, IXTQ44N50P datasheet PDF, IXTQ44N50P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTQ44N50P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTQ44N50P


N-Channel Tube 140m Ω @ 22A, 10V ±30V 5440pF @ 25V 98nC @ 10V 500V TO-3P-3, SC-65-3

IXTQ44N50P Overview


In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 1700 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 5440pF @ 25V.This device conducts a continuous drain current (ID) of 44A, which is the maximum continuous current transistor can conduct.Using VGS=500V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 500V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 75 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 110A.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 30V.A normal operation of the DS requires keeping the breakdown voltage above 500 V.This transistor requires a drain-source voltage (Vdss) of 500V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).

IXTQ44N50P Features


the avalanche energy rating (Eas) is 1700 mJ
a continuous drain current (ID) of 44A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 75 ns
based on its rated peak drain current 110A.
a 500V drain to source voltage (Vdss)


IXTQ44N50P Applications


There are a lot of IXYS
IXTQ44N50P applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
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