IXTQ42N25P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Package :

Tube

Reach Compliance Code :

Compliant

Package / Case :

TO-3P-3, SC-65-3

Case Connection :

DRAIN

Drain-source On Resistance-Max :

0.084Ohm

Vgs (Max) :

±20V

Transistor Element Material :

SILICON

Number of Terminals :

3

Lead Free :

Lead Free

JESD-30 Code :

R-PSFM-T3

Type :

PolarHT Power MOSFET

Series :

PolarHT™

Configuration :

Single

Turn-Off Delay Time :

81 ns

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Surface Mount :

No

Input Capacitance (Ciss) (Max) @ Vds :

2300pF @ 25V

Brand :

IXYS

Power Dissipation (Max) :

300W (Tc)

Base Product Number :

IXTQ42

Element Configuration :

Single

Number of Channels :

1 Channel

Published :

2006

Number of Pins :

3

Product Status :

Active

Tradename :

PolarHT

Number of Terminations :

3

Factory Lead Time :

24 Weeks

Terminal Finish :

Matte Tin (Sn)

Polarity/Channel Type :

N-Channel

Transistor Application :

SWITCHING

Power Dissipation :

300W

DS Breakdown Voltage-Min :

250 V

Height :

20.3 mm

Drain to Source Breakdown Voltage :

250V

Transistor Type :

1 N-Channel

Maximum Operating Temperature :

+ 150 C

Operating Mode :

ENHANCEMENT MODE

Fall Time (Typ) :

30 ns

Transistor Polarity :

N-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Continuous Drain Current (ID) :

42A

Product Category :

MOSFET

RoHS :

Details

Power Dissipation-Max :

300W Tc

Package Shape :

RECTANGULAR

Additional Feature :

AVALANCHE RATED

ECCN Code :

EAR99

Gate Charge (Qg) (Max) @ Vgs :

70nC @ 10V

Pulsed Drain Current-Max (IDM) :

110A

Qualification Status :

Not Qualified

Terminal Form :

THROUGH-HOLE

FET Type :

N-Channel

Minimum Operating Temperature :

- 55 C

Rds On (Max) @ Id, Vgs :

84m Ω @ 500mA, 10V

Number of Elements :

1

Drive Voltage (Max Rds On,Min Rds On) :

10V

Terminal Position :

Single

Vgs(th) (Max) @ Id :

5.5V @ 250µA

Mounting Type :

Through Hole

RoHS Status :

ROHS3 Compliant

Packaging :

Tube

Pin Count :

3

Length :

15.8 mm

Product Type :

MOSFET

Channel Mode :

Enhancement

Supplier Device Package :

TO-3P

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

JESD-609 Code :

e3

FET Feature :

--

Avalanche Energy Rating (Eas) :

1000 mJ

Drain to Source Voltage (Vdss) :

250V

Mounting Style :

Through Hole

Gate to Source Voltage (Vgs) :

20V

Pbfree Code :

yes

Manufacturer :

IXYS

Operating Temperature :

-55°C~150°C TJ

Width :

4.9 mm

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Mount :

Through Hole

Rise Time :

28ns

Current - Continuous Drain (Id) @ 25°C :

42A Tc

Subcategory :

MOSFETs