IXTQ42N25P

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Mfr.Part #
IXTQ42N25P
Manufacturer
Littelfuse
Package / Case
TO-3P-3, SC-65-3
Datasheet
Download
Description
MOSFET N-CH 250V 42A TO3P
Stock
56
In Stock :
56

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Drain to Source Voltage (Vdss) :
250V
JESD-609 Code :
e3
Number of Channels :
1 Channel
Number of Pins :
3
Mounting Type :
Through Hole
Continuous Drain Current (ID) :
42A
Subcategory :
MOSFETs
Transistor Application :
SWITCHING
Base Product Number :
IXTQ42
Height :
20.3 mm
Pin Count :
3
Terminal Form :
THROUGH-HOLE
Series :
PolarHT™
Maximum Operating Temperature :
+ 150 C
Terminal Finish :
Matte Tin (Sn)
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Width :
4.9 mm
Tradename :
PolarHT
Transistor Element Material :
SILICON
Transistor Polarity :
N-Channel
Terminal Position :
Single
Mount :
Through Hole
Number of Terminations :
3
Transistor Type :
1 N-Channel
Mounting Style :
Through Hole
Pbfree Code :
yes
Package :
Tube
Channel Mode :
Enhancement
Package Shape :
RECTANGULAR
Type :
PolarHT Power MOSFET
Gate to Source Voltage (Vgs) :
20V
Drain to Source Breakdown Voltage :
250V
FET Feature :
--
Lead Free :
Lead Free
Input Capacitance (Ciss) (Max) @ Vds :
2300pF @ 25V
Published :
2006
FET Type :
N-Channel
RoHS :
Details
Turn-Off Delay Time :
81 ns
Pulsed Drain Current-Max (IDM) :
110A
Packaging :
Tube
Brand :
IXYS
Vgs(th) (Max) @ Id :
5.5V @ 250µA
Reach Compliance Code :
Compliant
Factory Lead Time :
24 Weeks
Drain-source On Resistance-Max :
0.084Ohm
Rds On (Max) @ Id, Vgs :
84m Ω @ 500mA, 10V
Minimum Operating Temperature :
- 55 C
Power Dissipation :
300W
Length :
15.8 mm
Qualification Status :
Not Qualified
Polarity/Channel Type :
N-Channel
Surface Mount :
No
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Operating Temperature :
-55°C~150°C TJ
Supplier Device Package :
TO-3P
Fall Time (Typ) :
30 ns
Manufacturer :
IXYS
Configuration :
Single
Power Dissipation-Max :
300W Tc
Product Type :
MOSFET
Number of Elements :
1
Case Connection :
DRAIN
Element Configuration :
Single
Number of Terminals :
3
JESD-30 Code :
R-PSFM-T3
Product Status :
Active
RoHS Status :
ROHS3 Compliant
Additional Feature :
AVALANCHE RATED
Vgs (Max) :
±20V
DS Breakdown Voltage-Min :
250 V
Power Dissipation (Max) :
300W (Tc)
ECCN Code :
EAR99
Rise Time :
28ns
Product Category :
MOSFET
Current - Continuous Drain (Id) @ 25°C :
42A Tc
Package / Case :
TO-3P-3, SC-65-3
Operating Mode :
ENHANCEMENT MODE
Drive Voltage (Max Rds On,Min Rds On) :
10V
Gate Charge (Qg) (Max) @ Vgs :
70nC @ 10V
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Avalanche Energy Rating (Eas) :
1000 mJ
Datasheets
IXTQ42N25P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTQ42N25P from Chip IC,where excellence meets affordability. This product stands out with its Number of Channels:1 Channel, Number of Pins:3, Mounting Type:Through Hole, Number of Terminations:3, Type:PolarHT Power MOSFET, Operating Temperature:-55°C~150°C TJ, Package / Case:TO-3P-3, SC-65-3, IXTQ42N25P pinout, IXTQ42N25P datasheet PDF, IXTQ42N25P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTQ42N25P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTQ42N25P


N-Channel Tube 84m Ω @ 500mA, 10V ±20V 2300pF @ 25V 70nC @ 10V 250V TO-3P-3, SC-65-3

IXTQ42N25P Overview


In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 1000 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 2300pF @ 25V.This device conducts a continuous drain current (ID) of 42A, which is the maximum continuous current transistor can conduct.Using VGS=250V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 250V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 81 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 110A.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.A normal operation of the DS requires keeping the breakdown voltage above 250 V.This transistor requires a drain-source voltage (Vdss) of 250V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).

IXTQ42N25P Features


the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 42A
a drain-to-source breakdown voltage of 250V voltage
the turn-off delay time is 81 ns
based on its rated peak drain current 110A.
a 250V drain to source voltage (Vdss)


IXTQ42N25P Applications


There are a lot of IXYS
IXTQ42N25P applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
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