IXTQ42N25P
- Mfr.Part #
- IXTQ42N25P
- Manufacturer
- Littelfuse
- Package / Case
- TO-3P-3, SC-65-3
- Datasheet
- Download
- Description
- MOSFET N-CH 250V 42A TO3P
- Stock
- 56
- In Stock :
- 56
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drain to Source Voltage (Vdss) :
- 250V
- JESD-609 Code :
- e3
- Number of Channels :
- 1 Channel
- Number of Pins :
- 3
- Mounting Type :
- Through Hole
- Continuous Drain Current (ID) :
- 42A
- Subcategory :
- MOSFETs
- Transistor Application :
- SWITCHING
- Base Product Number :
- IXTQ42
- Height :
- 20.3 mm
- Pin Count :
- 3
- Terminal Form :
- THROUGH-HOLE
- Series :
- PolarHT™
- Maximum Operating Temperature :
- + 150 C
- Terminal Finish :
- Matte Tin (Sn)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Width :
- 4.9 mm
- Tradename :
- PolarHT
- Transistor Element Material :
- SILICON
- Transistor Polarity :
- N-Channel
- Terminal Position :
- Single
- Mount :
- Through Hole
- Number of Terminations :
- 3
- Transistor Type :
- 1 N-Channel
- Mounting Style :
- Through Hole
- Pbfree Code :
- yes
- Package :
- Tube
- Channel Mode :
- Enhancement
- Package Shape :
- RECTANGULAR
- Type :
- PolarHT Power MOSFET
- Gate to Source Voltage (Vgs) :
- 20V
- Drain to Source Breakdown Voltage :
- 250V
- FET Feature :
- --
- Lead Free :
- Lead Free
- Input Capacitance (Ciss) (Max) @ Vds :
- 2300pF @ 25V
- Published :
- 2006
- FET Type :
- N-Channel
- RoHS :
- Details
- Turn-Off Delay Time :
- 81 ns
- Pulsed Drain Current-Max (IDM) :
- 110A
- Packaging :
- Tube
- Brand :
- IXYS
- Vgs(th) (Max) @ Id :
- 5.5V @ 250µA
- Reach Compliance Code :
- Compliant
- Factory Lead Time :
- 24 Weeks
- Drain-source On Resistance-Max :
- 0.084Ohm
- Rds On (Max) @ Id, Vgs :
- 84m Ω @ 500mA, 10V
- Minimum Operating Temperature :
- - 55 C
- Power Dissipation :
- 300W
- Length :
- 15.8 mm
- Qualification Status :
- Not Qualified
- Polarity/Channel Type :
- N-Channel
- Surface Mount :
- No
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Operating Temperature :
- -55°C~150°C TJ
- Supplier Device Package :
- TO-3P
- Fall Time (Typ) :
- 30 ns
- Manufacturer :
- IXYS
- Configuration :
- Single
- Power Dissipation-Max :
- 300W Tc
- Product Type :
- MOSFET
- Number of Elements :
- 1
- Case Connection :
- DRAIN
- Element Configuration :
- Single
- Number of Terminals :
- 3
- JESD-30 Code :
- R-PSFM-T3
- Product Status :
- Active
- RoHS Status :
- ROHS3 Compliant
- Additional Feature :
- AVALANCHE RATED
- Vgs (Max) :
- ±20V
- DS Breakdown Voltage-Min :
- 250 V
- Power Dissipation (Max) :
- 300W (Tc)
- ECCN Code :
- EAR99
- Rise Time :
- 28ns
- Product Category :
- MOSFET
- Current - Continuous Drain (Id) @ 25°C :
- 42A Tc
- Package / Case :
- TO-3P-3, SC-65-3
- Operating Mode :
- ENHANCEMENT MODE
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Gate Charge (Qg) (Max) @ Vgs :
- 70nC @ 10V
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Avalanche Energy Rating (Eas) :
- 1000 mJ
- Datasheets
- IXTQ42N25P

N-Channel Tube 84m Ω @ 500mA, 10V ±20V 2300pF @ 25V 70nC @ 10V 250V TO-3P-3, SC-65-3
IXTQ42N25P Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 1000 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 2300pF @ 25V.This device conducts a continuous drain current (ID) of 42A, which is the maximum continuous current transistor can conduct.Using VGS=250V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 250V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 81 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 110A.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.A normal operation of the DS requires keeping the breakdown voltage above 250 V.This transistor requires a drain-source voltage (Vdss) of 250V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
IXTQ42N25P Features
the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 42A
a drain-to-source breakdown voltage of 250V voltage
the turn-off delay time is 81 ns
based on its rated peak drain current 110A.
a 250V drain to source voltage (Vdss)
IXTQ42N25P Applications
There are a lot of IXYS
IXTQ42N25P applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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