IXTQ40N50L2
- Mfr.Part #
- IXTQ40N50L2
- Manufacturer
- Littelfuse
- Package / Case
- TO-3P-3, SC-65-3
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 40A TO3P
- Stock
- 1,107
- In Stock :
- 1,107
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Operating Mode :
- ENHANCEMENT MODE
- Gate Charge (Qg) (Max) @ Vgs :
- 320nC @ 10V
- RoHS :
- Details
- Package / Case :
- TO-3P-3, SC-65-3
- Length :
- 15.8 mm
- JESD-609 Code :
- e3
- Power Dissipation :
- 540W
- Nominal Vgs :
- 2.5 V
- Power Dissipation (Max) :
- 540W (Tc)
- Additional Feature :
- AVALANCHE RATED
- Avalanche Energy Rating (Eas) :
- 2000 mJ
- Number of Terminals :
- 3
- Maximum Operating Temperature :
- + 150 C
- Terminal Form :
- THROUGH-HOLE
- Base Product Number :
- IXTQ40
- Continuous Drain Current (ID) :
- 40A
- Package Shape :
- RECTANGULAR
- Terminal Finish :
- Matte Tin (Sn)
- Packaging :
- Tube
- Transistor Element Material :
- SILICON
- Product Type :
- MOSFET
- Drain Current-Max (Abs) (ID) :
- 40 A
- Mount :
- Through Hole
- Number of Elements :
- 1
- Height :
- 20.3 mm
- Published :
- 2009
- Reach Compliance Code :
- Unknown
- Pin Count :
- 3
- Vgs (Max) :
- ±20V
- Case Connection :
- DRAIN
- Rise Time :
- 133 ns
- Operating Temperature :
- -55°C~150°C TJ
- Transistor Application :
- SWITCHING
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Polarity/Channel Type :
- N-Channel
- Rds On (Max) @ Id, Vgs :
- 170m Ω @ 20A, 10V
- RoHS Status :
- ROHS3 Compliant
- FET Feature :
- --
- Transistor Type :
- 1 N-Channel
- Factory Lead Time :
- 24 Weeks
- ECCN Code :
- EAR99
- FET Type :
- N-Channel
- Manufacturer :
- IXYS
- Pbfree Code :
- yes
- REACH SVHC :
- No SVHC
- Number of Terminations :
- 3
- Package :
- Tube
- Terminal Position :
- Single
- Brand :
- IXYS
- Drain to Source Voltage (Vdss) :
- 500V
- Supplier Device Package :
- TO-3P
- Number of Channels :
- 1 Channel
- Mounting Style :
- Through Hole
- Minimum Operating Temperature :
- - 55 C
- Threshold Voltage :
- 2.5V
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Product Status :
- Active
- Input Capacitance (Ciss) (Max) @ Vds :
- 10400pF @ 25V
- Surface Mount :
- No
- Type :
- Linear L2 Power MOSFET
- Resistance :
- 170mOhm
- Width :
- 4.9 mm
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Series :
- Linear L2™
- Current - Continuous Drain (Id) @ 25°C :
- 40A Tc
- JESD-30 Code :
- R-PSFM-T3
- Vgs(th) (Max) @ Id :
- 4.5V @ 250μA
- Tradename :
- Linear L2
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Polarity :
- N-Channel
- Channel Mode :
- Enhancement
- DS Breakdown Voltage-Min :
- 500V
- Qualification Status :
- Not Qualified
- Mounting Type :
- Through Hole
- Product Category :
- MOSFET
- Pulsed Drain Current-Max (IDM) :
- 80A
- Power Dissipation-Max :
- 540W Tc
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Number of Pins :
- 3
- Power Dissipation-Max (Abs) :
- 540 W
- Drain-source On Resistance-Max :
- 0.17 Ω
- Datasheets
- IXTQ40N50L2

N-Channel Tube 170m Ω @ 20A, 10V ±20V 10400pF @ 25V 320nC @ 10V 500V TO-3P-3, SC-65-3
IXTQ40N50L2 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 2000 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 10400pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.There is no drain current on this device since the maximum continuous current it can conduct is 40 A.There is a peak drain current of 80A, its maximum pulsed drain current.The threshold voltage is the point at which an electrical device activates any one of its operations, which for this transistor is 2.5V.In order for DS breakdown voltage to remain above 500V, it should remain above the 500V level.The transistor must receive a 500V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).
IXTQ40N50L2 Features
the avalanche energy rating (Eas) is 2000 mJ
a continuous drain current (ID) of 40A
based on its rated peak drain current 80A.
a threshold voltage of 2.5V
a 500V drain to source voltage (Vdss)
IXTQ40N50L2 Applications
There are a lot of IXYS
IXTQ40N50L2 applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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