IXTQ36P15P

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Mfr.Part #
IXTQ36P15P
Manufacturer
Littelfuse
Package / Case
TO-3P-3, SC-65-3
Datasheet
Download
Description
MOSFET P-CH 150V 36A TO3P
Stock
1
In Stock :
1

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Drain to Source Resistance :
110 mΩ
Mounting Type :
Through Hole
JESD-30 Code :
R-PSFM-T3
Factory Lead Time :
24 Weeks
Width :
4.9 mm
Gate to Source Voltage (Vgs) :
20V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Mount :
Through Hole
Qualification Status :
Not Qualified
Number of Terminations :
3
Product Category :
MOSFET
Vgs(th) (Max) @ Id :
4.5V @ 250μA
Max Operating Temperature :
150 °C
Drain Current-Max (Abs) (ID) :
36 A
Terminal Finish :
PURE TIN
Transistor Application :
SWITCHING
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Minimum Operating Temperature :
- 55 C
Max Power Dissipation :
300 W
Lead Free :
Lead Free
Rise Time :
31ns
Power Dissipation :
300W
Configuration :
Single
Terminal Position :
Single
Vgs (Max) :
±20V
Package / Case :
TO-3P-3, SC-65-3
Gate Charge (Qg) (Max) @ Vgs :
55nC @ 10V
FET Type :
P-Channel
Transistor Polarity :
P-Channel
Package :
Tube
Input Capacitance (Ciss) (Max) @ Vds :
3100pF @ 25V
Number of Channels :
1 Channel
Package Shape :
RECTANGULAR
Power Dissipation (Max) :
300W (Tc)
Pbfree Code :
yes
Product Status :
Active
Height :
20.3 mm
Packaging :
Tube
Power Dissipation-Max :
300W Tc
DS Breakdown Voltage-Min :
150 V
Operating Mode :
ENHANCEMENT MODE
Transistor Type :
1 P-Channel
Maximum Operating Temperature :
+ 150 C
Surface Mount :
No
Base Product Number :
IXTQ36
Product Type :
MOSFET
RoHS Status :
ROHS3 Compliant
Drain to Source Voltage (Vdss) :
150V
Min Operating Temperature :
-55 °C
Drain to Source Breakdown Voltage :
-150V
Pulsed Drain Current-Max (IDM) :
90A
Number of Terminals :
3
Rds On (Max) @ Id, Vgs :
110m Ω @ 18A, 10V
Drain-source On Resistance-Max :
0.11Ohm
Operating Temperature :
-55°C~150°C TJ
Supplier Device Package :
TO-3P
Avalanche Energy Rating (Eas) :
1500 mJ
JESD-609 Code :
e3
Series :
PolarP™
Pin Count :
3
Terminal Form :
THROUGH-HOLE
Current - Continuous Drain (Id) @ 25°C :
36A Tc
Number of Pins :
3
Transistor Element Material :
SILICON
Brand :
IXYS
Polarity/Channel Type :
P-Channel
Number of Elements :
1
Turn-Off Delay Time :
36 ns
Drive Voltage (Max Rds On,Min Rds On) :
10V
FET Feature :
--
Mounting Style :
Through Hole
RoHS :
Compliant
Case Connection :
DRAIN
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
ECCN Code :
EAR99
Power Dissipation-Max (Abs) :
300 W
Input Capacitance :
3.1 nF
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Element Configuration :
Single
Rds On Max :
110 mΩ
Reach Compliance Code :
Unknown
Published :
2009
Additional Feature :
AVALANCHE RATED
Channel Mode :
Enhancement
Fall Time (Typ) :
15 ns
Length :
15.8 mm
Manufacturer :
IXYS
Continuous Drain Current (ID) :
36A
Datasheets
IXTQ36P15P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTQ36P15P from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Number of Terminations:3, Package / Case:TO-3P-3, SC-65-3, Number of Channels:1 Channel, Operating Temperature:-55°C~150°C TJ, Number of Pins:3, IXTQ36P15P pinout, IXTQ36P15P datasheet PDF, IXTQ36P15P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTQ36P15P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTQ36P15P


P-Channel Tube 110m Ω @ 18A, 10V ±20V 3100pF @ 25V 55nC @ 10V 150V TO-3P-3, SC-65-3

IXTQ36P15P Overview


The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 1500 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 3100pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 36A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is -150V, and this device has a drainage-to-source breakdown voltage of -150VV.Drain current refers to the maximum continuous current a device can conduct, and it is 36 A.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 36 ns.Peak drain current is 90A, which is the maximum pulsed drain current.This device has a drain-to-source resistance of 110 mΩ when a gate-to-source voltage (VGS) is applied to bias it into the on state, and when this voltage is applied to bias it into the on state.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.Normal operation requires that the DS breakdown voltage remain above 150 V.For this transistor to work, a voltage 150V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.

IXTQ36P15P Features


the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 36A
a drain-to-source breakdown voltage of -150V voltage
the turn-off delay time is 36 ns
based on its rated peak drain current 90A.
single MOSFETs transistor is 110 mΩ
a 150V drain to source voltage (Vdss)


IXTQ36P15P Applications


There are a lot of IXYS
IXTQ36P15P applications of single MOSFETs transistors.


  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
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