IXTQ36P15P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Mounting Type :

Through Hole

Drain to Source Breakdown Voltage :

-150V

Length :

15.8 mm

Drain-source On Resistance-Max :

0.11Ohm

Operating Temperature :

-55°C~150°C TJ

Maximum Operating Temperature :

+ 150 C

FET Feature :

--

Case Connection :

DRAIN

JESD-609 Code :

e3

Factory Lead Time :

24 Weeks

Transistor Element Material :

SILICON

Qualification Status :

Not Qualified

Drain to Source Resistance :

110 mΩ

Terminal Finish :

PURE TIN

Product Status :

Active

Package :

Tube

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminals :

3

RoHS :

Compliant

Width :

4.9 mm

Surface Mount :

No

Element Configuration :

Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

Package / Case :

TO-3P-3, SC-65-3

Pulsed Drain Current-Max (IDM) :

90A

Power Dissipation (Max) :

300W (Tc)

Power Dissipation-Max :

300W Tc

Supplier Device Package :

TO-3P

Product Category :

MOSFET

Power Dissipation :

300W

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Reach Compliance Code :

Unknown

Channel Mode :

Enhancement

Product Type :

MOSFET

ECCN Code :

EAR99

Additional Feature :

AVALANCHE RATED

Max Power Dissipation :

300 W

Number of Pins :

3

Rds On (Max) @ Id, Vgs :

110m Ω @ 18A, 10V

Vgs (Max) :

±20V

Brand :

IXYS

Manufacturer :

IXYS

Minimum Operating Temperature :

- 55 C

Operating Mode :

ENHANCEMENT MODE

Packaging :

Tube

Number of Channels :

1 Channel

Mounting Style :

Through Hole

Gate Charge (Qg) (Max) @ Vgs :

55nC @ 10V

Input Capacitance :

3.1 nF

Min Operating Temperature :

-55 °C

Drain to Source Voltage (Vdss) :

150V

Vgs(th) (Max) @ Id :

4.5V @ 250μA

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Terminal Position :

Single

Polarity/Channel Type :

P-Channel

Transistor Application :

SWITCHING

Published :

2009

Turn-Off Delay Time :

36 ns

Continuous Drain Current (ID) :

36A

Base Product Number :

IXTQ36

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Height :

20.3 mm

Gate to Source Voltage (Vgs) :

20V

Series :

PolarP™

FET Type :

P-Channel

DS Breakdown Voltage-Min :

150 V

Pin Count :

3

Configuration :

Single

Terminal Form :

THROUGH-HOLE

Transistor Type :

1 P-Channel

Rds On Max :

110 mΩ

Mount :

Through Hole

Number of Elements :

1

Rise Time :

31ns

Package Shape :

RECTANGULAR

Pbfree Code :

yes

JESD-30 Code :

R-PSFM-T3

Drain Current-Max (Abs) (ID) :

36 A

Fall Time (Typ) :

15 ns

Current - Continuous Drain (Id) @ 25°C :

36A Tc

Number of Terminations :

3

RoHS Status :

ROHS3 Compliant

Avalanche Energy Rating (Eas) :

1500 mJ

Input Capacitance (Ciss) (Max) @ Vds :

3100pF @ 25V

Transistor Polarity :

P-Channel

Max Operating Temperature :

150 °C

Power Dissipation-Max (Abs) :

300 W

Lead Free :

Lead Free