IXTQ36P15P
- Mfr.Part #
- IXTQ36P15P
- Manufacturer
- Littelfuse
- Package / Case
- TO-3P-3, SC-65-3
- Datasheet
- Download
- Description
- MOSFET P-CH 150V 36A TO3P
- Stock
- 1
- In Stock :
- 1
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drain to Source Resistance :
- 110 mΩ
- Mounting Type :
- Through Hole
- JESD-30 Code :
- R-PSFM-T3
- Factory Lead Time :
- 24 Weeks
- Width :
- 4.9 mm
- Gate to Source Voltage (Vgs) :
- 20V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mount :
- Through Hole
- Qualification Status :
- Not Qualified
- Number of Terminations :
- 3
- Product Category :
- MOSFET
- Vgs(th) (Max) @ Id :
- 4.5V @ 250μA
- Max Operating Temperature :
- 150 °C
- Drain Current-Max (Abs) (ID) :
- 36 A
- Terminal Finish :
- PURE TIN
- Transistor Application :
- SWITCHING
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Minimum Operating Temperature :
- - 55 C
- Max Power Dissipation :
- 300 W
- Lead Free :
- Lead Free
- Rise Time :
- 31ns
- Power Dissipation :
- 300W
- Configuration :
- Single
- Terminal Position :
- Single
- Vgs (Max) :
- ±20V
- Package / Case :
- TO-3P-3, SC-65-3
- Gate Charge (Qg) (Max) @ Vgs :
- 55nC @ 10V
- FET Type :
- P-Channel
- Transistor Polarity :
- P-Channel
- Package :
- Tube
- Input Capacitance (Ciss) (Max) @ Vds :
- 3100pF @ 25V
- Number of Channels :
- 1 Channel
- Package Shape :
- RECTANGULAR
- Power Dissipation (Max) :
- 300W (Tc)
- Pbfree Code :
- yes
- Product Status :
- Active
- Height :
- 20.3 mm
- Packaging :
- Tube
- Power Dissipation-Max :
- 300W Tc
- DS Breakdown Voltage-Min :
- 150 V
- Operating Mode :
- ENHANCEMENT MODE
- Transistor Type :
- 1 P-Channel
- Maximum Operating Temperature :
- + 150 C
- Surface Mount :
- No
- Base Product Number :
- IXTQ36
- Product Type :
- MOSFET
- RoHS Status :
- ROHS3 Compliant
- Drain to Source Voltage (Vdss) :
- 150V
- Min Operating Temperature :
- -55 °C
- Drain to Source Breakdown Voltage :
- -150V
- Pulsed Drain Current-Max (IDM) :
- 90A
- Number of Terminals :
- 3
- Rds On (Max) @ Id, Vgs :
- 110m Ω @ 18A, 10V
- Drain-source On Resistance-Max :
- 0.11Ohm
- Operating Temperature :
- -55°C~150°C TJ
- Supplier Device Package :
- TO-3P
- Avalanche Energy Rating (Eas) :
- 1500 mJ
- JESD-609 Code :
- e3
- Series :
- PolarP™
- Pin Count :
- 3
- Terminal Form :
- THROUGH-HOLE
- Current - Continuous Drain (Id) @ 25°C :
- 36A Tc
- Number of Pins :
- 3
- Transistor Element Material :
- SILICON
- Brand :
- IXYS
- Polarity/Channel Type :
- P-Channel
- Number of Elements :
- 1
- Turn-Off Delay Time :
- 36 ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- FET Feature :
- --
- Mounting Style :
- Through Hole
- RoHS :
- Compliant
- Case Connection :
- DRAIN
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- ECCN Code :
- EAR99
- Power Dissipation-Max (Abs) :
- 300 W
- Input Capacitance :
- 3.1 nF
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Element Configuration :
- Single
- Rds On Max :
- 110 mΩ
- Reach Compliance Code :
- Unknown
- Published :
- 2009
- Additional Feature :
- AVALANCHE RATED
- Channel Mode :
- Enhancement
- Fall Time (Typ) :
- 15 ns
- Length :
- 15.8 mm
- Manufacturer :
- IXYS
- Continuous Drain Current (ID) :
- 36A
- Datasheets
- IXTQ36P15P

P-Channel Tube 110m Ω @ 18A, 10V ±20V 3100pF @ 25V 55nC @ 10V 150V TO-3P-3, SC-65-3
IXTQ36P15P Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 1500 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 3100pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 36A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is -150V, and this device has a drainage-to-source breakdown voltage of -150VV.Drain current refers to the maximum continuous current a device can conduct, and it is 36 A.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 36 ns.Peak drain current is 90A, which is the maximum pulsed drain current.This device has a drain-to-source resistance of 110 mΩ when a gate-to-source voltage (VGS) is applied to bias it into the on state, and when this voltage is applied to bias it into the on state.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.Normal operation requires that the DS breakdown voltage remain above 150 V.For this transistor to work, a voltage 150V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
IXTQ36P15P Features
the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 36A
a drain-to-source breakdown voltage of -150V voltage
the turn-off delay time is 36 ns
based on its rated peak drain current 90A.
single MOSFETs transistor is 110 mΩ
a 150V drain to source voltage (Vdss)
IXTQ36P15P Applications
There are a lot of IXYS
IXTQ36P15P applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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