IXTQ36N50P

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Mfr.Part #
IXTQ36N50P
Manufacturer
Littelfuse
Package / Case
TO-3P-3, SC-65-3
Datasheet
Download
Description
MOSFET N-CH 500V 36A TO3P
Stock
71
In Stock :
71

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Type :
PolarHV Power MOSFET
Rise Time :
27ns
FET Type :
N-Channel
Resistance :
170mOhm
Pin Count :
3
Configuration :
Single
Drive Voltage (Max Rds On,Min Rds On) :
10V
Number of Terminals :
3
Package Shape :
RECTANGULAR
Terminal Form :
THROUGH-HOLE
Avalanche Energy Rating (Eas) :
1500 mJ
Maximum Operating Temperature :
+ 150 C
Product Type :
MOSFET
RoHS Status :
ROHS3 Compliant
Qualification Status :
Not Qualified
Pulsed Drain Current-Max (IDM) :
108A
Terminal Finish :
Matte Tin (Sn)
Transistor Application :
SWITCHING
JESD-609 Code :
e3
Mount :
Through Hole
JESD-30 Code :
R-PSFM-T3
FET Feature :
--
Package / Case :
TO-3P-3, SC-65-3
Drain-source On Resistance-Max :
0.17 Ω
Brand :
IXYS
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Length :
15.8 mm
Number of Channels :
1 Channel
Vgs(th) (Max) @ Id :
5V @ 250μA
Current - Continuous Drain (Id) @ 25°C :
36A Tc
Turn-Off Delay Time :
75 ns
Power Dissipation-Max :
540W Tc
Terminal Position :
Single
Published :
2006
Rds On (Max) @ Id, Vgs :
170m Ω @ 500mA, 10V
RoHS :
Details
Operating Mode :
ENHANCEMENT MODE
Transistor Element Material :
SILICON
Channel Mode :
Enhancement
Current Rating :
36A
Input Capacitance (Ciss) (Max) @ Vds :
5500pF @ 25V
Element Configuration :
Single
Tradename :
PolarHV
Manufacturer :
IXYS
Subcategory :
MOSFETs
Factory Lead Time :
5 Weeks
Transistor Type :
1 N-Channel
DS Breakdown Voltage-Min :
500 V
Polarity/Channel Type :
N-Channel
Power Dissipation (Max) :
540W (Tc)
Mounting Type :
Through Hole
Supplier Device Package :
TO-3P
Number of Pins :
3
Number of Terminations :
3
Number of Elements :
1
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Surface Mount :
No
Minimum Operating Temperature :
- 55 C
Packaging :
Tube
Additional Feature :
AVALANCHE RATED
Base Product Number :
IXTQ36
Power Dissipation :
540W
Vgs (Max) :
±30V
Fall Time (Typ) :
21 ns
Mounting Style :
Through Hole
Drain to Source Breakdown Voltage :
500V
Product Category :
MOSFET
Voltage - Rated DC :
500V
Gate to Source Voltage (Vgs) :
30V
Product Status :
Active
Package :
Tube
Width :
4.9 mm
Continuous Drain Current (ID) :
36A
Gate Charge (Qg) (Max) @ Vgs :
85nC @ 10V
Lead Free :
Lead Free
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Operating Temperature :
-55°C~150°C TJ
Pbfree Code :
yes
Height :
20.3 mm
Case Connection :
DRAIN
Transistor Polarity :
N-Channel
Reach Compliance Code :
Compliant
Drain to Source Voltage (Vdss) :
500V
Series :
PolarHV™
Datasheets
IXTQ36N50P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTQ36N50P from Chip IC,where excellence meets affordability. This product stands out with its Type:PolarHV Power MOSFET, Package / Case:TO-3P-3, SC-65-3, Number of Channels:1 Channel, Mounting Type:Through Hole, Number of Pins:3, Number of Terminations:3, Operating Temperature:-55°C~150°C TJ, IXTQ36N50P pinout, IXTQ36N50P datasheet PDF, IXTQ36N50P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTQ36N50P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTQ36N50P


N-Channel Tube 170m Ω @ 500mA, 10V ±30V 5500pF @ 25V 85nC @ 10V 500V TO-3P-3, SC-65-3

IXTQ36N50P Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 1500 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 5500pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 500V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 500V.As a result of its turn-off delay time, which is 75 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 108A, its maximum pulsed drain current.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 30VV.In order for DS breakdown voltage to remain above 500 V, it should remain above the 500 V level.The transistor must receive a 500V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).

IXTQ36N50P Features


the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 36A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 75 ns
based on its rated peak drain current 108A.
a 500V drain to source voltage (Vdss)


IXTQ36N50P Applications


There are a lot of IXYS
IXTQ36N50P applications of single MOSFETs transistors.


  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
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