IXTQ36N50P
- Mfr.Part #
- IXTQ36N50P
- Manufacturer
- Littelfuse
- Package / Case
- TO-3P-3, SC-65-3
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 36A TO3P
- Stock
- 71
- In Stock :
- 71
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Type :
- PolarHV Power MOSFET
- Rise Time :
- 27ns
- FET Type :
- N-Channel
- Resistance :
- 170mOhm
- Pin Count :
- 3
- Configuration :
- Single
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Number of Terminals :
- 3
- Package Shape :
- RECTANGULAR
- Terminal Form :
- THROUGH-HOLE
- Avalanche Energy Rating (Eas) :
- 1500 mJ
- Maximum Operating Temperature :
- + 150 C
- Product Type :
- MOSFET
- RoHS Status :
- ROHS3 Compliant
- Qualification Status :
- Not Qualified
- Pulsed Drain Current-Max (IDM) :
- 108A
- Terminal Finish :
- Matte Tin (Sn)
- Transistor Application :
- SWITCHING
- JESD-609 Code :
- e3
- Mount :
- Through Hole
- JESD-30 Code :
- R-PSFM-T3
- FET Feature :
- --
- Package / Case :
- TO-3P-3, SC-65-3
- Drain-source On Resistance-Max :
- 0.17 Ω
- Brand :
- IXYS
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Length :
- 15.8 mm
- Number of Channels :
- 1 Channel
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Current - Continuous Drain (Id) @ 25°C :
- 36A Tc
- Turn-Off Delay Time :
- 75 ns
- Power Dissipation-Max :
- 540W Tc
- Terminal Position :
- Single
- Published :
- 2006
- Rds On (Max) @ Id, Vgs :
- 170m Ω @ 500mA, 10V
- RoHS :
- Details
- Operating Mode :
- ENHANCEMENT MODE
- Transistor Element Material :
- SILICON
- Channel Mode :
- Enhancement
- Current Rating :
- 36A
- Input Capacitance (Ciss) (Max) @ Vds :
- 5500pF @ 25V
- Element Configuration :
- Single
- Tradename :
- PolarHV
- Manufacturer :
- IXYS
- Subcategory :
- MOSFETs
- Factory Lead Time :
- 5 Weeks
- Transistor Type :
- 1 N-Channel
- DS Breakdown Voltage-Min :
- 500 V
- Polarity/Channel Type :
- N-Channel
- Power Dissipation (Max) :
- 540W (Tc)
- Mounting Type :
- Through Hole
- Supplier Device Package :
- TO-3P
- Number of Pins :
- 3
- Number of Terminations :
- 3
- Number of Elements :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Surface Mount :
- No
- Minimum Operating Temperature :
- - 55 C
- Packaging :
- Tube
- Additional Feature :
- AVALANCHE RATED
- Base Product Number :
- IXTQ36
- Power Dissipation :
- 540W
- Vgs (Max) :
- ±30V
- Fall Time (Typ) :
- 21 ns
- Mounting Style :
- Through Hole
- Drain to Source Breakdown Voltage :
- 500V
- Product Category :
- MOSFET
- Voltage - Rated DC :
- 500V
- Gate to Source Voltage (Vgs) :
- 30V
- Product Status :
- Active
- Package :
- Tube
- Width :
- 4.9 mm
- Continuous Drain Current (ID) :
- 36A
- Gate Charge (Qg) (Max) @ Vgs :
- 85nC @ 10V
- Lead Free :
- Lead Free
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Operating Temperature :
- -55°C~150°C TJ
- Pbfree Code :
- yes
- Height :
- 20.3 mm
- Case Connection :
- DRAIN
- Transistor Polarity :
- N-Channel
- Reach Compliance Code :
- Compliant
- Drain to Source Voltage (Vdss) :
- 500V
- Series :
- PolarHV™
- Datasheets
- IXTQ36N50P

N-Channel Tube 170m Ω @ 500mA, 10V ±30V 5500pF @ 25V 85nC @ 10V 500V TO-3P-3, SC-65-3
IXTQ36N50P Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 1500 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 5500pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 500V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 500V.As a result of its turn-off delay time, which is 75 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 108A, its maximum pulsed drain current.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 30VV.In order for DS breakdown voltage to remain above 500 V, it should remain above the 500 V level.The transistor must receive a 500V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).
IXTQ36N50P Features
the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 36A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 75 ns
based on its rated peak drain current 108A.
a 500V drain to source voltage (Vdss)
IXTQ36N50P Applications
There are a lot of IXYS
IXTQ36N50P applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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