IXTQ36N30P

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Mfr.Part #
IXTQ36N30P
Manufacturer
Littelfuse
Package / Case
TO-3P-3, SC-65-3
Datasheet
Download
Description
MOSFET N-CH 300V 36A TO3P
Stock
128
In Stock :
128

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Rise Time :
30ns
Minimum Operating Temperature :
- 55 C
Number of Pins :
3
Product Type :
MOSFET
Operating Mode :
ENHANCEMENT MODE
Mount :
Through Hole
Package :
Tube
Case Connection :
DRAIN
JESD-609 Code :
e3
Vgs(th) (Max) @ Id :
5.5V @ 250µA
Width :
4.9 mm
Transistor Type :
1 N-Channel
Manufacturer :
IXYS
Base Product Number :
IXTQ36
RoHS Status :
ROHS3 Compliant
Maximum Operating Temperature :
+ 150 C
Qualification Status :
Not Qualified
Pin Count :
3
FET Feature :
--
JESD-30 Code :
R-PSFM-T3
Gate Charge (Qg) (Max) @ Vgs :
70nC @ 10V
Gate to Source Voltage (Vgs) :
30V
RoHS :
Details
Terminal Finish :
Matte Tin (Sn)
Number of Channels :
1 Channel
Product Status :
Active
Length :
15.8 mm
Lead Free :
Lead Free
Drain to Source Breakdown Voltage :
300V
Factory Lead Time :
24 Weeks
Number of Terminals :
3
Rds On (Max) @ Id, Vgs :
110m Ω @ 18A, 10V
Height :
20.3 mm
Terminal Position :
Single
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Mounting Style :
Through Hole
Continuous Drain Current (ID) :
36A
Published :
2006
Drive Voltage (Max Rds On,Min Rds On) :
10V
Number of Elements :
1
Polarity/Channel Type :
N-Channel
Transistor Polarity :
N-Channel
Drain to Source Voltage (Vdss) :
300V
Product Category :
MOSFET
Surface Mount :
No
Current - Continuous Drain (Id) @ 25°C :
36A Tc
Input Capacitance (Ciss) (Max) @ Vds :
2250pF @ 25V
Mounting Type :
Through Hole
Power Dissipation-Max :
300W Tc
Element Configuration :
Single
Drain-source On Resistance-Max :
0.11Ohm
Configuration :
Single
FET Type :
N-Channel
Power Dissipation :
300W
DS Breakdown Voltage-Min :
300 V
Supplier Device Package :
TO-3P
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Package Shape :
RECTANGULAR
Vgs (Max) :
±30V
Subcategory :
MOSFETs
Power Dissipation (Max) :
300W (Tc)
Transistor Application :
SWITCHING
Package / Case :
TO-3P-3, SC-65-3
Pbfree Code :
yes
Additional Feature :
AVALANCHE RATED
Packaging :
Tube
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Turn-Off Delay Time :
97 ns
Series :
PolarHT™
ECCN Code :
EAR99
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Terminal Form :
THROUGH-HOLE
Operating Temperature :
-55°C~150°C TJ
Channel Mode :
Enhancement
Pulsed Drain Current-Max (IDM) :
90A
Reach Compliance Code :
Compliant
Brand :
IXYS
Fall Time (Typ) :
28 ns
Number of Terminations :
3
Avalanche Energy Rating (Eas) :
1000 mJ
Transistor Element Material :
SILICON
Datasheets
IXTQ36N30P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTQ36N30P from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Number of Channels:1 Channel, Mounting Type:Through Hole, Package / Case:TO-3P-3, SC-65-3, Operating Temperature:-55°C~150°C TJ, Number of Terminations:3, IXTQ36N30P pinout, IXTQ36N30P datasheet PDF, IXTQ36N30P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTQ36N30P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTQ36N30P


N-Channel Tube 110m Ω @ 18A, 10V ±30V 2250pF @ 25V 70nC @ 10V 300V TO-3P-3, SC-65-3

IXTQ36N30P Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 1000 mJ.A device's maximum input capacitance is 2250pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 36A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=300V, and this device has a drain-to-source breakdown voltage of 300V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 97 ns.Its maximum pulsed drain current is 90A, which is also its maximum rating peak drainage current.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.For normal operation, maintain the DS breakdown voltage above 300 V.To operate this transistor, you need to apply a 300V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.

IXTQ36N30P Features


the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 36A
a drain-to-source breakdown voltage of 300V voltage
the turn-off delay time is 97 ns
based on its rated peak drain current 90A.
a 300V drain to source voltage (Vdss)


IXTQ36N30P Applications


There are a lot of IXYS
IXTQ36N30P applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters
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