IXTQ32P20T
- Mfr.Part #
- IXTQ32P20T
- Manufacturer
- Littelfuse
- Package / Case
- TO-3P-3, SC-65-3
- Datasheet
- Download
- Description
- MOSFET P-CH 200V 32A TO3P
- Stock
- 27,905
- In Stock :
- 27,905
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Transistor Polarity :
- P-Channel
- Series :
- TrenchP™
- Minimum Operating Temperature :
- - 55 C
- Factory Lead Time :
- 24 Weeks
- Reach Compliance Code :
- Compliant
- Additional Feature :
- AVALANCHE RATED
- Vgs (Max) :
- ±15V
- Pulsed Drain Current-Max (IDM) :
- 96A
- Base Product Number :
- IXTQ32
- Mounting Type :
- Through Hole
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Operating Temperature :
- -55°C~150°C TJ
- Manufacturer :
- IXYS
- Package / Case :
- TO-3P-3, SC-65-3
- JESD-30 Code :
- R-PSFM-T3
- Gate Charge (Qg) (Max) @ Vgs :
- 185nC @ 10V
- Surface Mount :
- No
- Rise Time :
- 15 ns
- RoHS :
- Details
- Transistor Type :
- 1 P-Channel
- Input Capacitance (Ciss) (Max) @ Vds :
- 14500pF @ 25V
- Drain Current-Max (Abs) (ID) :
- 32A
- Qualification Status :
- Not Qualified
- Brand :
- IXYS
- Current - Continuous Drain (Id) @ 25°C :
- 32A Tc
- Power Dissipation-Max :
- 300W Tc
- Package :
- Tube
- Supplier Device Package :
- TO-3P
- Channel Mode :
- Enhancement
- Operating Mode :
- ENHANCEMENT MODE
- Product Category :
- MOSFET
- ECCN Code :
- EAR99
- Terminal Position :
- Single
- RoHS Status :
- RoHS Compliant
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Packaging :
- Tube
- Product Status :
- Active
- Rds On (Max) @ Id, Vgs :
- 130m Ω @ 16A, 10V
- Number of Channels :
- 1 Channel
- Pin Count :
- 3
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Number of Elements :
- 1
- Transistor Application :
- SWITCHING
- Avalanche Energy Rating (Eas) :
- 1000 mJ
- FET Feature :
- -
- Number of Terminations :
- 3
- DS Breakdown Voltage-Min :
- 200V
- Transistor Element Material :
- SILICON
- Drain-source On Resistance-Max :
- 0.13Ohm
- Maximum Operating Temperature :
- + 150 C
- Power Dissipation (Max) :
- 300W (Tc)
- Product Type :
- MOSFET
- Case Connection :
- DRAIN
- FET Type :
- P-Channel
- Drain to Source Voltage (Vdss) :
- 200V
- Mounting Style :
- Through Hole
- Datasheets
- IXTQ32P20T
P-Channel Tube 130m Ω @ 16A, 10V ±15V 14500pF @ 25V 185nC @ 10V 200V TO-3P-3, SC-65-3
IXTQ32P20T Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 1000 mJ.A device's maximal input capacitance is 14500pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.In this device, the drain current is 32A, which is the maximum continuous current the device can conduct.In terms of pulsed drain current, it has a maximum of 96A, which is its maximum rated peak drain current.To maintain normal operation, it is recommended that the DS breakdown voltage be above 200V.This transistor requires a 200V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
IXTQ32P20T Features
the avalanche energy rating (Eas) is 1000 mJ
based on its rated peak drain current 96A.
a 200V drain to source voltage (Vdss)
IXTQ32P20T Applications
There are a lot of IXYS
IXTQ32P20T applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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