IXTQ32P20T
- Mfr.Part #
- IXTQ32P20T
- Manufacturer
- Littelfuse
- Package / Case
- TO-3P-3, SC-65-3
- Datasheet
- Download
- Description
- MOSFET P-CH 200V 32A TO3P
- Stock
- 27,905
- In Stock :
- 27,905
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Elements :
- 1
- Manufacturer :
- IXYS
- Package :
- Tube
- RoHS :
- Details
- Drain Current-Max (Abs) (ID) :
- 32A
- Product Category :
- MOSFET
- Minimum Operating Temperature :
- - 55 C
- Reach Compliance Code :
- Compliant
- Packaging :
- Tube
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Vgs (Max) :
- ±15V
- Series :
- TrenchP™
- Gate Charge (Qg) (Max) @ Vgs :
- 185nC @ 10V
- Drain to Source Voltage (Vdss) :
- 200V
- Channel Mode :
- Enhancement
- Power Dissipation (Max) :
- 300W (Tc)
- Package / Case :
- TO-3P-3, SC-65-3
- Surface Mount :
- No
- Mounting Style :
- Through Hole
- Brand :
- IXYS
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Number of Channels :
- 1 Channel
- Case Connection :
- DRAIN
- Number of Terminations :
- 3
- JESD-30 Code :
- R-PSFM-T3
- Operating Mode :
- ENHANCEMENT MODE
- DS Breakdown Voltage-Min :
- 200V
- Pin Count :
- 3
- Drain-source On Resistance-Max :
- 0.13Ohm
- RoHS Status :
- RoHS Compliant
- Power Dissipation-Max :
- 300W Tc
- Rds On (Max) @ Id, Vgs :
- 130m Ω @ 16A, 10V
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Terminal Position :
- Single
- Transistor Polarity :
- P-Channel
- Product Type :
- MOSFET
- Operating Temperature :
- -55°C~150°C TJ
- Avalanche Energy Rating (Eas) :
- 1000 mJ
- Transistor Type :
- 1 P-Channel
- Pulsed Drain Current-Max (IDM) :
- 96A
- Supplier Device Package :
- TO-3P
- Qualification Status :
- Not Qualified
- Input Capacitance (Ciss) (Max) @ Vds :
- 14500pF @ 25V
- Additional Feature :
- AVALANCHE RATED
- Base Product Number :
- IXTQ32
- Mounting Type :
- Through Hole
- ECCN Code :
- EAR99
- Maximum Operating Temperature :
- + 150 C
- FET Feature :
- -
- Factory Lead Time :
- 24 Weeks
- Transistor Element Material :
- SILICON
- Transistor Application :
- SWITCHING
- Product Status :
- Active
- Rise Time :
- 15 ns
- Current - Continuous Drain (Id) @ 25°C :
- 32A Tc
- FET Type :
- P-Channel
- Datasheets
- IXTQ32P20T
P-Channel Tube 130m Ω @ 16A, 10V ±15V 14500pF @ 25V 185nC @ 10V 200V TO-3P-3, SC-65-3
IXTQ32P20T Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 1000 mJ.A device's maximal input capacitance is 14500pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.In this device, the drain current is 32A, which is the maximum continuous current the device can conduct.In terms of pulsed drain current, it has a maximum of 96A, which is its maximum rated peak drain current.To maintain normal operation, it is recommended that the DS breakdown voltage be above 200V.This transistor requires a 200V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
IXTQ32P20T Features
the avalanche energy rating (Eas) is 1000 mJ
based on its rated peak drain current 96A.
a 200V drain to source voltage (Vdss)
IXTQ32P20T Applications
There are a lot of IXYS
IXTQ32P20T applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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