IXTQ30N60P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Length :

15.8 mm

Number of Channels :

1 Channel

Input Capacitance (Ciss) (Max) @ Vds :

5050pF @ 25V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Factory Lead Time :

24 Weeks

Manufacturer :

IXYS

Vgs(th) (Max) @ Id :

5V @ 250μA

Transistor Type :

1 N-Channel

Gate Charge (Qg) (Max) @ Vgs :

82nC @ 10V

Power Dissipation-Max :

540W Tc

Configuration :

Single

Number of Elements :

1

Number of Pins :

3

Surface Mount :

No

Continuous Drain Current (ID) :

30A

Brand :

IXYS

Package Shape :

RECTANGULAR

Width :

4.9 mm

Gate to Source Voltage (Vgs) :

30V

Power Dissipation (Max) :

540W (Tc)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drain-source On Resistance-Max :

0.24Ohm

Rise Time :

20ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Polarity/Channel Type :

N-Channel

Published :

2006

JESD-30 Code :

R-PSFM-T3

Channel Mode :

Enhancement

Additional Feature :

AVALANCHE RATED

Fall Time (Typ) :

25 ns

RoHS :

Details

JESD-609 Code :

e3

Number of Terminals :

3

Number of Terminations :

3

Transistor Polarity :

N-Channel

Pulsed Drain Current-Max (IDM) :

80A

FET Feature :

--

Pbfree Code :

yes

Pin Count :

3

Product Type :

MOSFET

Mounting Style :

Through Hole

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Package / Case :

TO-3P-3, SC-65-3

Maximum Operating Temperature :

+ 150 C

Package :

Tube

Product Status :

Active

Subcategory :

MOSFETs

Base Product Number :

IXTQ30

Avalanche Energy Rating (Eas) :

1500 mJ

Operating Temperature :

-55°C~150°C TJ

Reach Compliance Code :

Compliant

Transistor Application :

SWITCHING

Qualification Status :

Not Qualified

Product Category :

MOSFET

Rds On (Max) @ Id, Vgs :

240m Ω @ 15A, 10V

Drain to Source Breakdown Voltage :

600V

Series :

PolarHV™

FET Technology :

METAL-OXIDE SEMICONDUCTOR

FET Type :

N-Channel

RoHS Status :

ROHS3 Compliant

Mount :

Through Hole

Current Rating :

30A

Current - Continuous Drain (Id) @ 25°C :

30A Tc

Vgs (Max) :

±30V

Terminal Position :

Single

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON

Minimum Operating Temperature :

- 55 C

DS Breakdown Voltage-Min :

600 V

Voltage - Rated DC :

600V

Height :

20.3 mm

Drain to Source Voltage (Vdss) :

600V

Case Connection :

DRAIN

Mounting Type :

Through Hole

Terminal Finish :

Matte Tin (Sn)

Turn-Off Delay Time :

80 ns

Element Configuration :

Single

Terminal Form :

THROUGH-HOLE

Supplier Device Package :

TO-3P

Lead Free :

Lead Free

Power Dissipation :

540W

Packaging :

Tube