IXTQ30N60L2
- Mfr.Part #
- IXTQ30N60L2
- Manufacturer
- Littelfuse
- Package / Case
- TO-3P-3, SC-65-3
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 30A TO3P
- Stock
- 273
- In Stock :
- 273
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Terminal Position :
- Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Nominal Vgs :
- 2.5 V
- Additional Feature :
- AVALANCHE RATED
- Number of Terminals :
- 3
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Manufacturer :
- IXYS
- REACH SVHC :
- No SVHC
- Package Shape :
- RECTANGULAR
- Package / Case :
- TO-3P-3, SC-65-3
- Current - Continuous Drain (Id) @ 25°C :
- 30A Tc
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Power Dissipation :
- 540W
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Surface Mount :
- No
- Mounting Style :
- Through Hole
- Transistor Type :
- 1 N-Channel
- Channel Mode :
- Enhancement
- Type :
- Linear L2 Power MOSFET
- Operating Temperature :
- -55°C~150°C TJ
- Tradename :
- Linear L2
- Product Type :
- MOSFET
- Terminal Form :
- THROUGH-HOLE
- ECCN Code :
- EAR99
- Pulsed Drain Current-Max (IDM) :
- 80A
- Power Dissipation (Max) :
- 540W (Tc)
- Reach Compliance Code :
- Unknown
- Number of Elements :
- 1
- Length :
- 15.8 mm
- RoHS :
- Details
- Drain to Source Voltage (Vdss) :
- 600V
- Terminal Finish :
- PURE TIN
- Number of Channels :
- 1 Channel
- Height :
- 20.3 mm
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Continuous Drain Current (ID) :
- 30A
- Vgs(th) (Max) @ Id :
- 4.5V @ 250μA
- FET Feature :
- --
- Transistor Element Material :
- SILICON
- Number of Pins :
- 3
- Factory Lead Time :
- 24 Weeks
- RoHS Status :
- ROHS3 Compliant
- Mounting Type :
- Through Hole
- Power Dissipation-Max :
- 540W Tc
- Input Capacitance (Ciss) (Max) @ Vds :
- 10700pF @ 25V
- Package :
- Tube
- Case Connection :
- DRAIN
- Mount :
- Through Hole
- DS Breakdown Voltage-Min :
- 600V
- Maximum Operating Temperature :
- + 150 C
- Gate Charge (Qg) (Max) @ Vgs :
- 335nC @ 10V
- Minimum Operating Temperature :
- - 55 C
- Subcategory :
- MOSFETs
- Product Category :
- MOSFET
- Published :
- 2009
- Width :
- 4.9 mm
- Operating Mode :
- ENHANCEMENT MODE
- Rds On (Max) @ Id, Vgs :
- 240m Ω @ 15A, 10V
- JESD-609 Code :
- e3
- Avalanche Energy Rating (Eas) :
- 2000 mJ
- Transistor Application :
- SWITCHING
- Vgs (Max) :
- ±20V
- JESD-30 Code :
- R-PSFM-T3
- Product Status :
- Active
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Base Product Number :
- IXTQ30
- Pbfree Code :
- yes
- Threshold Voltage :
- 2.5V
- Brand :
- IXYS
- Packaging :
- Tube
- Drain-source On Resistance-Max :
- 0.24Ohm
- Qualification Status :
- Not Qualified
- Transistor Polarity :
- N-Channel
- Series :
- Linear L2™
- Number of Terminations :
- 3
- Supplier Device Package :
- TO-3P
- Polarity/Channel Type :
- N-Channel
- Pin Count :
- 3
- FET Type :
- N-Channel
- Rise Time :
- 65 ns
- Datasheets
- IXTQ30N60L2

N-Channel Tube 240m Ω @ 15A, 10V ±20V 10700pF @ 25V 335nC @ 10V 600V TO-3P-3, SC-65-3
IXTQ30N60L2 Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 2000 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 10700pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 30A continuous drain current (ID).Peak drain current is 80A, which is the maximum pulsed drain current.In this case, the threshold voltage of the transistor is 2.5V, which means that it will not activate any of its functions when its threshold voltage reaches 2.5V.Normal operation requires that the DS breakdown voltage remain above 600V.For this transistor to work, a voltage 600V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
IXTQ30N60L2 Features
the avalanche energy rating (Eas) is 2000 mJ
a continuous drain current (ID) of 30A
based on its rated peak drain current 80A.
a threshold voltage of 2.5V
a 600V drain to source voltage (Vdss)
IXTQ30N60L2 Applications
There are a lot of IXYS
IXTQ30N60L2 applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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