IXTQ30N50P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain-source On Resistance-Max :

0.2Ohm

Current - Continuous Drain (Id) @ 25°C :

30A Tc

Avalanche Energy Rating (Eas) :

1200 mJ

Operating Mode :

ENHANCEMENT MODE

Base Product Number :

IXTQ30

Mounting Style :

Through Hole

Configuration :

Single

Minimum Operating Temperature :

- 55 C

Vgs (Max) :

±30V

Current Rating :

30A

Terminal Position :

Single

Package Shape :

RECTANGULAR

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

70nC @ 10V

Additional Feature :

AVALANCHE RATED

Input Capacitance (Ciss) (Max) @ Vds :

4150pF @ 25V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Manufacturer :

IXYS

Pin Count :

3

Case Connection :

DRAIN

Height :

20.3 mm

Transistor Polarity :

N-Channel

Product Status :

Active

Voltage - Rated DC :

500V

Continuous Drain Current (ID) :

30A

Transistor Type :

1 N-Channel

Lead Free :

Lead Free

Turn-Off Delay Time :

75 ns

Brand :

IXYS

Pulsed Drain Current-Max (IDM) :

75A

Series :

PolarHV™

Drain to Source Voltage (Vdss) :

500V

Mounting Type :

Through Hole

Factory Lead Time :

24 Weeks

JESD-609 Code :

e3

Rise Time :

27ns

Polarity/Channel Type :

N-Channel

Number of Channels :

1 Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Feature :

--

Pbfree Code :

yes

Reach Compliance Code :

Compliant

Width :

4.9 mm

Power Dissipation :

460W

Package / Case :

TO-3P-3, SC-65-3

Number of Terminations :

3

Channel Mode :

Enhancement

Terminal Finish :

Matte Tin (Sn)

Power Dissipation-Max :

460W Tc

Operating Temperature :

-55°C~150°C TJ

Number of Pins :

3

Package :

Tube

Mount :

Through Hole

Type :

PolarHV Power MOSFET

RoHS :

Details

Transistor Application :

SWITCHING

JESD-30 Code :

R-PSFM-T3

Qualification Status :

Not Qualified

Tradename :

PolarHV

Supplier Device Package :

TO-3P

Product Category :

MOSFET

Rds On (Max) @ Id, Vgs :

200m Ω @ 15A, 10V

Terminal Form :

THROUGH-HOLE

Vgs(th) (Max) @ Id :

5V @ 250μA

Drive Voltage (Max Rds On,Min Rds On) :

10V

Power Dissipation (Max) :

460W (Tc)

Packaging :

Tube

Published :

2006

Transistor Element Material :

SILICON

Number of Terminals :

3

Element Configuration :

Single

FET Technology :

METAL-OXIDE SEMICONDUCTOR

FET Type :

N-Channel

Length :

15.8 mm

Product Type :

MOSFET

Maximum Operating Temperature :

+ 150 C

DS Breakdown Voltage-Min :

500 V

Gate to Source Voltage (Vgs) :

30V

Subcategory :

MOSFETs

Surface Mount :

No

Fall Time (Typ) :

21 ns

RoHS Status :

ROHS3 Compliant

Drain to Source Breakdown Voltage :

500V