IXTQ30N50L
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- Mfr.Part #
- IXTQ30N50L
- Manufacturer
- Littelfuse
- Package / Case
- TO-3P-3, SC-65-3
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 30A TO3P
- Stock
- 27,275
- In Stock ：
- 27,275
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Input Capacitance (Ciss) (Max) @ Vds :
- 10200pF @ 25V
- Case Connection :
- DRAIN
- Pin Count :
- 3
- Base Product Number :
- IXTQ30
- Rds On (Max) @ Id, Vgs :
- 200m Ω @ 15A, 10V
- Transistor Type :
- 1 N-Channel
- Pbfree Code :
- yes
- Published :
- 2007
- Current - Continuous Drain (Id) @ 25°C :
- 30A Tc
- Power Dissipation-Max :
- 400W Tc
- JESD-30 Code :
- R-PSFM-T3
- Packaging :
- Tube
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Polarity/Channel Type :
- N-Channel
- Number of Elements :
- 1
- Gate Charge (Qg) (Max) @ Vgs :
- 240nC @ 10V
- Operating Temperature :
- -55°C~150°C TJ
- Package / Case :
- TO-3P-3, SC-65-3
- FET Type :
- N-Channel
- Continuous Drain Current (ID) :
- 30A
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Number of Terminations :
- 3
- DS Breakdown Voltage-Min :
- 500V
- Mounting Style :
- Through Hole
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- RoHS Status :
- ROHS3 Compliant
- Terminal Form :
- THROUGH-HOLE
- Terminal Finish :
- Matte Tin (Sn)
- RoHS :
- Details
- Manufacturer :
- IXYS
- Vgs(th) (Max) @ Id :
- 4.5V @ 250μA
- Reach Compliance Code :
- Compliant
- Number of Terminals :
- 3
- Vgs (Max) :
- ±20V
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Configuration :
- SINGLE WITH BUILT-IN DIODE AND RESISTOR
- Number of Channels :
- 1 Channel
- Drain to Source Voltage (Vdss) :
- 500V
- Power Dissipation (Max) :
- 400W (Tc)
- Product Status :
- Active
- Series :
- --
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mount :
- Through Hole
- JESD-609 Code :
- e3
- Factory Lead Time :
- 24 Weeks
- Surface Mount :
- No
- Drain-source On Resistance-Max :
- 0.2Ohm
- Avalanche Energy Rating (Eas) :
- 1500 mJ
- Transistor Polarity :
- N-Channel
- Transistor Element Material :
- SILICON
- Transistor Application :
- SWITCHING
- Operating Mode :
- ENHANCEMENT MODE
- Package Shape :
- RECTANGULAR
- Package :
- Tube
- Brand :
- IXYS
- Mounting Type :
- Through Hole
- Supplier Device Package :
- TO-3P
- FET Feature :
- --
- Product Type :
- MOSFET
- Terminal Position :
- Single
- Subcategory :
- MOSFETs
- Qualification Status :
- Not Qualified
- Product Category :
- MOSFET
- Pulsed Drain Current-Max (IDM) :
- 60A
- Datasheets
- IXTQ30N50L
N-Channel Tube 200m Ω @ 15A, 10V ±20V 10200pF @ 25V 240nC @ 10V 500V TO-3P-3, SC-65-3
IXTQ30N50L Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 1500 mJ.A device's maximum input capacitance is 10200pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 30A for this device. Drain current refers to the capacity of the device to conduct continuous current.Its maximum pulsed drain current is 60A, which is also its maximum rating peak drainage current.For normal operation, maintain the DS breakdown voltage above 500V.To operate this transistor, you need to apply a 500V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
IXTQ30N50L Features
the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 30A
based on its rated peak drain current 60A.
a 500V drain to source voltage (Vdss)
IXTQ30N50L Applications
There are a lot of IXYS
IXTQ30N50L applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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