IXTQ22N60P

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Mfr.Part #
IXTQ22N60P
Manufacturer
Littelfuse
Package / Case
TO-3P-3, SC-65-3
Datasheet
Download
Description
MOSFET N-CH 600V 22A TO3P
Stock
194
In Stock :
194

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Operating Mode :
ENHANCEMENT MODE
Terminal Position :
Single
Power Dissipation :
400W
Package Shape :
RECTANGULAR
Number of Terminations :
3
Configuration :
Single
Number of Channels :
1 Channel
Pin Count :
3
Current - Continuous Drain (Id) @ 25°C :
22A Tc
Transistor Polarity :
N-Channel
Mount :
Through Hole
Maximum Operating Temperature :
+ 150 C
Terminal Form :
THROUGH-HOLE
FET Type :
N-Channel
Product Category :
MOSFET
Power Dissipation (Max) :
400W (Tc)
Drive Voltage (Max Rds On,Min Rds On) :
10V
Transistor Element Material :
SILICON
JESD-609 Code :
e3
Power Dissipation-Max :
400W Tc
Pulsed Drain Current-Max (IDM) :
66A
Element Configuration :
Single
Voltage - Rated DC :
600V
Rise Time :
20ns
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Transistor Type :
1 N-Channel
Surface Mount :
No
Height :
20.3 mm
Number of Terminals :
3
Product Status :
Active
Package :
Tube
RoHS :
Details
Additional Feature :
AVALANCHE RATED
Brand :
IXYS
Vgs(th) (Max) @ Id :
5.5V @ 250µA
Factory Lead Time :
24 Weeks
Product Type :
MOSFET
Gate to Source Voltage (Vgs) :
30V
Channel Mode :
Enhancement
Case Connection :
DRAIN
Package / Case :
TO-3P-3, SC-65-3
Input Capacitance (Ciss) (Max) @ Vds :
3600pF @ 25V
Length :
15.8 mm
Current Rating :
22A
Operating Temperature :
-55°C~150°C TJ
Drain-source On Resistance-Max :
0.35 Ω
Fall Time (Typ) :
23 ns
Base Product Number :
IXTQ22
Avalanche Energy Rating (Eas) :
1000 mJ
Lead Free :
Lead Free
Transistor Application :
SWITCHING
Continuous Drain Current (ID) :
22A
Qualification Status :
Not Qualified
Turn-Off Delay Time :
60 ns
JESD-30 Code :
R-PSFM-T3
Drain to Source Breakdown Voltage :
600V
Width :
4.9 mm
Polarity/Channel Type :
N-Channel
Vgs (Max) :
±30V
Number of Elements :
1
Series :
PolarHV™
Drain to Source Voltage (Vdss) :
600V
DS Breakdown Voltage-Min :
600 V
Mounting Type :
Through Hole
Packaging :
Tube
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Gate Charge (Qg) (Max) @ Vgs :
62nC @ 10V
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Reach Compliance Code :
Compliant
Number of Pins :
3
Minimum Operating Temperature :
- 55 C
Mounting Style :
Through Hole
Pbfree Code :
yes
Manufacturer :
IXYS
Resistance :
350mOhm
Subcategory :
MOSFETs
FET Feature :
--
RoHS Status :
ROHS3 Compliant
Rds On (Max) @ Id, Vgs :
350m Ω @ 11A, 10V
Terminal Finish :
Matte Tin (Sn)
Supplier Device Package :
TO-3P
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Published :
2006
Datasheets
IXTQ22N60P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTQ22N60P from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Number of Channels:1 Channel, Package / Case:TO-3P-3, SC-65-3, Operating Temperature:-55°C~150°C TJ, Mounting Type:Through Hole, Number of Pins:3, IXTQ22N60P pinout, IXTQ22N60P datasheet PDF, IXTQ22N60P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTQ22N60P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTQ22N60P


N-Channel Tube 350m Ω @ 11A, 10V ±30V 3600pF @ 25V 62nC @ 10V 600V TO-3P-3, SC-65-3

IXTQ22N60P Overview


The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 1000 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 3600pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 22A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 600V, and this device has a drainage-to-source breakdown voltage of 600VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 60 ns.Peak drain current is 66A, which is the maximum pulsed drain current.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 30V to 1.Normal operation requires that the DS breakdown voltage remain above 600 V.For this transistor to work, a voltage 600V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.

IXTQ22N60P Features


the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 22A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 60 ns
based on its rated peak drain current 66A.
a 600V drain to source voltage (Vdss)


IXTQ22N60P Applications


There are a lot of IXYS
IXTQ22N60P applications of single MOSFETs transistors.


  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
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