IXTQ22N60P
- Mfr.Part #
- IXTQ22N60P
- Manufacturer
- Littelfuse
- Package / Case
- TO-3P-3, SC-65-3
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 22A TO3P
- Stock
- 194
- In Stock :
- 194
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Operating Mode :
- ENHANCEMENT MODE
- Terminal Position :
- Single
- Power Dissipation :
- 400W
- Package Shape :
- RECTANGULAR
- Number of Terminations :
- 3
- Configuration :
- Single
- Number of Channels :
- 1 Channel
- Pin Count :
- 3
- Current - Continuous Drain (Id) @ 25°C :
- 22A Tc
- Transistor Polarity :
- N-Channel
- Mount :
- Through Hole
- Maximum Operating Temperature :
- + 150 C
- Terminal Form :
- THROUGH-HOLE
- FET Type :
- N-Channel
- Product Category :
- MOSFET
- Power Dissipation (Max) :
- 400W (Tc)
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Transistor Element Material :
- SILICON
- JESD-609 Code :
- e3
- Power Dissipation-Max :
- 400W Tc
- Pulsed Drain Current-Max (IDM) :
- 66A
- Element Configuration :
- Single
- Voltage - Rated DC :
- 600V
- Rise Time :
- 20ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Type :
- 1 N-Channel
- Surface Mount :
- No
- Height :
- 20.3 mm
- Number of Terminals :
- 3
- Product Status :
- Active
- Package :
- Tube
- RoHS :
- Details
- Additional Feature :
- AVALANCHE RATED
- Brand :
- IXYS
- Vgs(th) (Max) @ Id :
- 5.5V @ 250µA
- Factory Lead Time :
- 24 Weeks
- Product Type :
- MOSFET
- Gate to Source Voltage (Vgs) :
- 30V
- Channel Mode :
- Enhancement
- Case Connection :
- DRAIN
- Package / Case :
- TO-3P-3, SC-65-3
- Input Capacitance (Ciss) (Max) @ Vds :
- 3600pF @ 25V
- Length :
- 15.8 mm
- Current Rating :
- 22A
- Operating Temperature :
- -55°C~150°C TJ
- Drain-source On Resistance-Max :
- 0.35 Ω
- Fall Time (Typ) :
- 23 ns
- Base Product Number :
- IXTQ22
- Avalanche Energy Rating (Eas) :
- 1000 mJ
- Lead Free :
- Lead Free
- Transistor Application :
- SWITCHING
- Continuous Drain Current (ID) :
- 22A
- Qualification Status :
- Not Qualified
- Turn-Off Delay Time :
- 60 ns
- JESD-30 Code :
- R-PSFM-T3
- Drain to Source Breakdown Voltage :
- 600V
- Width :
- 4.9 mm
- Polarity/Channel Type :
- N-Channel
- Vgs (Max) :
- ±30V
- Number of Elements :
- 1
- Series :
- PolarHV™
- Drain to Source Voltage (Vdss) :
- 600V
- DS Breakdown Voltage-Min :
- 600 V
- Mounting Type :
- Through Hole
- Packaging :
- Tube
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Gate Charge (Qg) (Max) @ Vgs :
- 62nC @ 10V
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Reach Compliance Code :
- Compliant
- Number of Pins :
- 3
- Minimum Operating Temperature :
- - 55 C
- Mounting Style :
- Through Hole
- Pbfree Code :
- yes
- Manufacturer :
- IXYS
- Resistance :
- 350mOhm
- Subcategory :
- MOSFETs
- FET Feature :
- --
- RoHS Status :
- ROHS3 Compliant
- Rds On (Max) @ Id, Vgs :
- 350m Ω @ 11A, 10V
- Terminal Finish :
- Matte Tin (Sn)
- Supplier Device Package :
- TO-3P
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Published :
- 2006
- Datasheets
- IXTQ22N60P

N-Channel Tube 350m Ω @ 11A, 10V ±30V 3600pF @ 25V 62nC @ 10V 600V TO-3P-3, SC-65-3
IXTQ22N60P Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 1000 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 3600pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 22A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 600V, and this device has a drainage-to-source breakdown voltage of 600VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 60 ns.Peak drain current is 66A, which is the maximum pulsed drain current.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 30V to 1.Normal operation requires that the DS breakdown voltage remain above 600 V.For this transistor to work, a voltage 600V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
IXTQ22N60P Features
the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 22A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 60 ns
based on its rated peak drain current 66A.
a 600V drain to source voltage (Vdss)
IXTQ22N60P Applications
There are a lot of IXYS
IXTQ22N60P applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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