IXTQ22N50P
- Mfr.Part #
- IXTQ22N50P
- Manufacturer
- Littelfuse
- Package / Case
- TO-3P-3, SC-65-3
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 22A TO3P
- Stock
- 22,421
- In Stock :
- 22,421
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Gate Charge (Qg) (Max) @ Vgs :
- 50nC @ 10V
- Current - Continuous Drain (Id) @ 25°C :
- 22A Tc
- Continuous Drain Current Id :
- 22A
- Height :
- 20.3 mm
- Power Dissipation :
- 350W
- Case Connection :
- DRAIN
- Channel Type :
- N Channel
- Polarity/Channel Type :
- N-Channel
- Power Dissipation (Max) :
- 350W (Tc)
- RoHS :
- Details
- Surface Mount :
- No
- Drain to Source Breakdown Voltage :
- 500V
- FET Feature :
- --
- Vgs(th) (Max) @ Id :
- 5.5V @ 250µA
- Width :
- 4.9 mm
- Gate to Source Voltage (Vgs) :
- 30V
- Operating Mode :
- ENHANCEMENT MODE
- Vgs (Max) :
- ±30V
- Element Configuration :
- Single
- Qualification Status :
- Not Qualified
- Package / Case :
- TO-3P-3, SC-65-3
- Rise Time :
- 27ns
- DS Breakdown Voltage-Min :
- 500 V
- Power Dissipation-Max :
- 350W Tc
- Pbfree Code :
- yes
- Pin Count :
- 3
- Number of Terminals :
- 3
- Product Category :
- MOSFET
- Supplier Device Package :
- TO-3P
- Mounting Style :
- Through Hole
- Transistor Polarity :
- N-Channel
- Drain-source On Resistance-Max :
- 0.27Ohm
- Maximum Operating Temperature :
- + 150 C
- Transistor Application :
- SWITCHING
- Additional Feature :
- AVALANCHE RATED
- Product Status :
- Active
- Configuration :
- Single
- Avalanche Energy Rating (Eas) :
- 750 mJ
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Factory Lead Time :
- 5 Weeks
- Pulsed Drain Current-Max (IDM) :
- 50A
- Terminal Position :
- Single
- FET Type :
- N-Channel
- Number of Channels :
- 1 Channel
- Current Rating :
- 22A
- Transistor Type :
- 1 N-Channel
- Series :
- PolarHV™
- Number of Elements :
- 1
- Product Type :
- MOSFET
- Rds On (Max) @ Id, Vgs :
- 270m Ω @ 11A, 10V
- Base Product Number :
- IXTQ22
- Brand :
- IXYS
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Minimum Operating Temperature :
- - 55 C
- Number of Terminations :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Length :
- 15.8 mm
- RoHS Status :
- ROHS3 Compliant
- Power Dissipation-Max (Abs) :
- 350 W
- Channel Mode :
- Enhancement
- Drain Current-Max (Abs) (ID) :
- 22 A
- Mounting Type :
- Through Hole
- Lead Free :
- Lead Free
- Operating Temperature :
- -55°C~150°C TJ
- Number of Pins :
- 3
- Transistor Element Material :
- SILICON
- Package Shape :
- RECTANGULAR
- Packaging :
- Tube
- Fall Time (Typ) :
- 21 ns
- Terminal Form :
- THROUGH-HOLE
- Terminal Finish :
- Matte Tin (Sn)
- Published :
- 2006
- Mount :
- Through Hole
- Reach Compliance Code :
- Compliant
- Package :
- Tube
- Turn-Off Delay Time :
- 75 ns
- JESD-609 Code :
- e3
- JESD-30 Code :
- R-PSFM-T3
- Qualification :
- -
- Drain to Source Voltage (Vdss) :
- 500V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Manufacturer :
- IXYS
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Input Capacitance (Ciss) (Max) @ Vds :
- 2630pF @ 25V
- Continuous Drain Current (ID) :
- 22A
- Voltage - Rated DC :
- 500V
- Datasheets
- IXTQ22N50P

N-Channel Tube 270m Ω @ 11A, 10V ±30V 2630pF @ 25V 50nC @ 10V 500V TO-3P-3, SC-65-3
IXTQ22N50P Overview
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 750 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 2630pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 22A.With a drain-source breakdown voltage of 500V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 500V.22 A is the drain current of this device, which is the maximum continuous current transistor can carry.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 75 ns.Peak drain current for this device is 50A, which is its maximum pulsed drain current.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.To maintain normal operation, the DS breakdown voltage should be kept above 500 V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 500V.Using drive voltage (10V) reduces this device's overall power consumption.
IXTQ22N50P Features
the avalanche energy rating (Eas) is 750 mJ
a continuous drain current (ID) of 22A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 75 ns
based on its rated peak drain current 50A.
a 500V drain to source voltage (Vdss)
IXTQ22N50P Applications
There are a lot of IXYS
IXTQ22N50P applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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