IXTQ22N50P

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Mfr.Part #
IXTQ22N50P
Manufacturer
Littelfuse
Package / Case
TO-3P-3, SC-65-3
Datasheet
Download
Description
MOSFET N-CH 500V 22A TO3P
Stock
22,421
In Stock :
22,421

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Gate Charge (Qg) (Max) @ Vgs :
50nC @ 10V
Current - Continuous Drain (Id) @ 25°C :
22A Tc
Continuous Drain Current Id :
22A
Height :
20.3 mm
Power Dissipation :
350W
Case Connection :
DRAIN
Channel Type :
N Channel
Polarity/Channel Type :
N-Channel
Power Dissipation (Max) :
350W (Tc)
RoHS :
Details
Surface Mount :
No
Drain to Source Breakdown Voltage :
500V
FET Feature :
--
Vgs(th) (Max) @ Id :
5.5V @ 250µA
Width :
4.9 mm
Gate to Source Voltage (Vgs) :
30V
Operating Mode :
ENHANCEMENT MODE
Vgs (Max) :
±30V
Element Configuration :
Single
Qualification Status :
Not Qualified
Package / Case :
TO-3P-3, SC-65-3
Rise Time :
27ns
DS Breakdown Voltage-Min :
500 V
Power Dissipation-Max :
350W Tc
Pbfree Code :
yes
Pin Count :
3
Number of Terminals :
3
Product Category :
MOSFET
Supplier Device Package :
TO-3P
Mounting Style :
Through Hole
Transistor Polarity :
N-Channel
Drain-source On Resistance-Max :
0.27Ohm
Maximum Operating Temperature :
+ 150 C
Transistor Application :
SWITCHING
Additional Feature :
AVALANCHE RATED
Product Status :
Active
Configuration :
Single
Avalanche Energy Rating (Eas) :
750 mJ
Drive Voltage (Max Rds On,Min Rds On) :
10V
Factory Lead Time :
5 Weeks
Pulsed Drain Current-Max (IDM) :
50A
Terminal Position :
Single
FET Type :
N-Channel
Number of Channels :
1 Channel
Current Rating :
22A
Transistor Type :
1 N-Channel
Series :
PolarHV™
Number of Elements :
1
Product Type :
MOSFET
Rds On (Max) @ Id, Vgs :
270m Ω @ 11A, 10V
Base Product Number :
IXTQ22
Brand :
IXYS
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Minimum Operating Temperature :
- 55 C
Number of Terminations :
3
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Length :
15.8 mm
RoHS Status :
ROHS3 Compliant
Power Dissipation-Max (Abs) :
350 W
Channel Mode :
Enhancement
Drain Current-Max (Abs) (ID) :
22 A
Mounting Type :
Through Hole
Lead Free :
Lead Free
Operating Temperature :
-55°C~150°C TJ
Number of Pins :
3
Transistor Element Material :
SILICON
Package Shape :
RECTANGULAR
Packaging :
Tube
Fall Time (Typ) :
21 ns
Terminal Form :
THROUGH-HOLE
Terminal Finish :
Matte Tin (Sn)
Published :
2006
Mount :
Through Hole
Reach Compliance Code :
Compliant
Package :
Tube
Turn-Off Delay Time :
75 ns
JESD-609 Code :
e3
JESD-30 Code :
R-PSFM-T3
Qualification :
-
Drain to Source Voltage (Vdss) :
500V
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Manufacturer :
IXYS
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Input Capacitance (Ciss) (Max) @ Vds :
2630pF @ 25V
Continuous Drain Current (ID) :
22A
Voltage - Rated DC :
500V
Datasheets
IXTQ22N50P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTQ22N50P from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-3P-3, SC-65-3, Number of Channels:1 Channel, Number of Terminations:3, Mounting Type:Through Hole, Operating Temperature:-55°C~150°C TJ, Number of Pins:3, IXTQ22N50P pinout, IXTQ22N50P datasheet PDF, IXTQ22N50P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTQ22N50P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTQ22N50P


N-Channel Tube 270m Ω @ 11A, 10V ±30V 2630pF @ 25V 50nC @ 10V 500V TO-3P-3, SC-65-3

IXTQ22N50P Overview


Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 750 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 2630pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 22A.With a drain-source breakdown voltage of 500V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 500V.22 A is the drain current of this device, which is the maximum continuous current transistor can carry.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 75 ns.Peak drain current for this device is 50A, which is its maximum pulsed drain current.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.To maintain normal operation, the DS breakdown voltage should be kept above 500 V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 500V.Using drive voltage (10V) reduces this device's overall power consumption.

IXTQ22N50P Features


the avalanche energy rating (Eas) is 750 mJ
a continuous drain current (ID) of 22A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 75 ns
based on its rated peak drain current 50A.
a 500V drain to source voltage (Vdss)


IXTQ22N50P Applications


There are a lot of IXYS
IXTQ22N50P applications of single MOSFETs transistors.


  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
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