IXTQ200N10T

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-609 Code :

e3

RoHS Status :

ROHS3 Compliant

Power Dissipation-Max :

550W Tc

Power Dissipation :

550W

Drain to Source Voltage (Vdss) :

100V

Fall Time (Typ) :

34 ns

Transistor Element Material :

SILICON

Operating Temperature :

-55°C~175°C TJ

Transistor Application :

SWITCHING

Surface Mount :

No

Channel Mode :

Enhancement

Minimum Operating Temperature :

- 55 C

Brand :

IXYS

Vgs (Max) :

±30V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Current - Continuous Drain (Id) @ 25°C :

200A Tc

Package Shape :

RECTANGULAR

RoHS :

Details

Packaging :

Tube

Terminal Finish :

PURE TIN

DS Breakdown Voltage-Min :

100 V

Manufacturer :

IXYS

Number of Terminals :

3

Terminal Position :

Single

FET Feature :

--

Gate Charge (Qg) (Max) @ Vgs :

152nC @ 10V

Reach Compliance Code :

Unknown

Element Configuration :

Single

Package :

Tube

Series :

TrenchMV™

Length :

15.8 mm

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Pulsed Drain Current-Max (IDM) :

500A

Lead Free :

Lead Free

Drive Voltage (Max Rds On,Min Rds On) :

10V

Power Dissipation (Max) :

550W (Tc)

Resistance :

5.5mOhm

Product Category :

MOSFET

Transistor Type :

1 N-Channel

Vgs(th) (Max) @ Id :

4.5V @ 250μA

Rds On (Max) @ Id, Vgs :

5.5m Ω @ 50A, 10V

Base Product Number :

IXTQ200

Qualification Status :

Not Qualified

Number of Pins :

3

Number of Elements :

1

Turn-Off Delay Time :

45 ns

Power Dissipation-Max (Abs) :

550 W

Product Status :

Active

Case Connection :

DRAIN

Tradename :

HiPerFET

Width :

4.9 mm

Operating Mode :

ENHANCEMENT MODE

Additional Feature :

AVALANCHE RATED

Drain-source On Resistance-Max :

0.0055 Ω

Mount :

Through Hole

Drain to Source Breakdown Voltage :

100V

ECCN Code :

EAR99

Product Type :

MOSFET

Number of Terminations :

3

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Configuration :

Single

Continuous Drain Current (ID) :

200A

Published :

2008

Avalanche Energy Rating (Eas) :

1500 mJ

Input Capacitance (Ciss) (Max) @ Vds :

9400pF @ 25V

Terminal Form :

THROUGH-HOLE

Drain Current-Max (Abs) (ID) :

200 A

Mounting Type :

Through Hole

Polarity/Channel Type :

N-Channel

Supplier Device Package :

TO-3P

Mounting Style :

Through Hole

FET Type :

N-Channel

Factory Lead Time :

8 Weeks

Height :

20.3 mm

Package / Case :

TO-3P-3, SC-65-3

Pbfree Code :

yes

Transistor Polarity :

N-Channel

Rise Time :

31ns

Pin Count :

3

JESD-30 Code :

R-PSFM-T3

Number of Channels :

1 Channel

Maximum Operating Temperature :

+ 175 C