IXTQ200N06P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Turn-Off Delay Time :

90 ns

Drain-source On Resistance-Max :

0.006Ohm

Number of Elements :

1

Rise Time :

60ns

Pin Count :

3

Rds On (Max) @ Id, Vgs :

5m Ω @ 400A, 15V

Package :

Tube

Element Configuration :

Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

Manufacturer :

IXYS Corporation

Polarity/Channel Type :

N-Channel

Number of Pins :

3

Vgs(th) (Max) @ Id :

5V @ 250μA

Case Connection :

DRAIN

Mount :

Through Hole

FET Type :

N-Channel

Mounting Type :

Through Hole

ECCN Code :

EAR99

FET Feature :

--

Power Dissipation-Max :

714W Tc

Power Dissipation :

714W

JESD-30 Code :

R-PSFM-T3

Pulsed Drain Current-Max (IDM) :

400A

Transistor Application :

SWITCHING

Series :

PolarHT™

Additional Feature :

AVALANCHE RATED

Input Capacitance (Ciss) (Max) @ Vds :

5400pF @ 25V

Configuration :

SINGLE WITH BUILT-IN DIODE

RoHS Status :

ROHS3 Compliant

Continuous Drain Current (ID) :

200A

Avalanche Energy Rating (Eas) :

4000 mJ

Number of Terminations :

3

Factory Lead Time :

10 Weeks

Fall Time (Typ) :

40 ns

Terminal Finish :

Matte Tin (Sn)

Qualification Status :

Not Qualified

Surface Mount :

No

Reach Compliance Code :

Compliant

Terminal Form :

THROUGH-HOLE

Terminal Position :

Single

Pbfree Code :

yes

DS Breakdown Voltage-Min :

60 V

Product Status :

Active

Supplier Device Package :

TO-3P

Power Dissipation (Max) :

714W (Tc)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Gate to Source Voltage (Vgs) :

20V

Drain to Source Voltage (Vdss) :

60V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

JESD-609 Code :

e3

Packaging :

Tube

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

200nC @ 10V

Base Product Number :

IXTQ200

Operating Temperature :

-55°C~175°C TJ

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Vgs (Max) :

±20V

Drain to Source Breakdown Voltage :

60V

Number of Terminals :

3

Published :

2006

Package / Case :

TO-3P-3, SC-65-3

Current - Continuous Drain (Id) @ 25°C :

200A Tc

Transistor Element Material :

SILICON

Package Shape :

RECTANGULAR