IXTQ18N60P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Supplier Device Package :

TO-3P

Packaging :

Tube

Transistor Element Material :

SILICON

Drain to Source Voltage (Vdss) :

600V

Current - Continuous Drain (Id) @ 25°C :

18A Tc

Length :

15.8 mm

Number of Terminations :

3

Rds On (Max) @ Id, Vgs :

420m Ω @ 9A, 10V

FET Type :

N-Channel

Product Type :

MOSFET

Transistor Polarity :

N-Channel

JESD-609 Code :

e3

Terminal Position :

Single

Pbfree Code :

yes

Maximum Operating Temperature :

+ 150 C

Current Rating :

18A

Fall Time (Typ) :

22 ns

Manufacturer :

IXYS

Number of Pins :

3

Vgs (Max) :

±30V

Power Dissipation (Max) :

360W (Tc)

Input Capacitance (Ciss) (Max) @ Vds :

2500pF @ 25V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Polarity/Channel Type :

N-Channel

Minimum Operating Temperature :

- 55 C

Factory Lead Time :

24 Weeks

Case Connection :

DRAIN

Channel Mode :

Enhancement

Mount :

Through Hole

Lead Free :

Lead Free

Number of Terminals :

3

Drain-source On Resistance-Max :

0.42Ohm

Terminal Form :

THROUGH-HOLE

Voltage - Rated DC :

600V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Gate to Source Voltage (Vgs) :

30V

Reach Compliance Code :

Compliant

Package :

Tube

Mounting Style :

Through Hole

Subcategory :

MOSFETs

FET Feature :

--

Number of Channels :

1 Channel

Product Status :

Active

JESD-30 Code :

R-PSFM-T3

Turn-Off Delay Time :

62 ns

RoHS Status :

ROHS3 Compliant

Terminal Finish :

Matte Tin (Sn)

Number of Elements :

1

Product Category :

MOSFET

Additional Feature :

AVALANCHE RATED

Transistor Application :

SWITCHING

Package / Case :

TO-3P-3, SC-65-3

Brand :

IXYS

Power Dissipation :

360W

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Surface Mount :

No

Configuration :

Single

DS Breakdown Voltage-Min :

600 V

Drain to Source Breakdown Voltage :

600V

Continuous Drain Current (ID) :

18A

Published :

2006

Mounting Type :

Through Hole

Power Dissipation-Max :

360W Tc

Vgs(th) (Max) @ Id :

5.5V @ 250µA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pulsed Drain Current-Max (IDM) :

54A

Pin Count :

3

RoHS :

Details

Element Configuration :

Single

Avalanche Energy Rating (Eas) :

1000 mJ

Package Shape :

RECTANGULAR

Rise Time :

22ns

Qualification Status :

Not Qualified

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

49nC @ 10V

Operating Temperature :

-55°C~150°C TJ

Base Product Number :

IXTQ18

Series :

PolarHV™

Height :

20.3 mm

Transistor Type :

1 N-Channel

Width :

4.9 mm