IXTQ180N10T

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Reach Compliance Code :

Unknown

Package Shape :

RECTANGULAR

Avalanche Energy Rating (Eas) :

750 mJ

JESD-609 Code :

e3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Rise Time :

54ns

Terminal Finish :

PURE TIN

Terminal Position :

Single

Additional Feature :

AVALANCHE RATED

Power Dissipation-Max :

480W Tc

Width :

4.9 mm

Pbfree Code :

yes

Packaging :

Tube

FET Feature :

--

Minimum Operating Temperature :

- 55 C

Factory Lead Time :

8 Weeks

Supplier Device Package :

TO-3P

Operating Temperature :

-55°C~175°C TJ

Package / Case :

TO-3P-3, SC-65-3

Pulsed Drain Current-Max (IDM) :

450A

Transistor Polarity :

N-Channel

Mount :

Through Hole

Channel Mode :

Enhancement

Transistor Application :

SWITCHING

Product Category :

MOSFET

Gate Charge (Qg) (Max) @ Vgs :

151nC @ 10V

Rds On (Max) @ Id, Vgs :

6.4m Ω @ 25A, 10V

Number of Elements :

1

RoHS :

Details

Height :

20.3 mm

Mounting Style :

Through Hole

Brand :

IXYS

Current - Continuous Drain (Id) @ 25°C :

180A Tc

Input Capacitance :

6.9 nF

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drain-source On Resistance-Max :

0.0064Ohm

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Type :

1 N-Channel

Configuration :

Single

Base Product Number :

IXTQ180

Min Operating Temperature :

-55 °C

Polarity/Channel Type :

N-Channel

Maximum Operating Temperature :

+ 175 C

Terminal Form :

THROUGH-HOLE

Length :

15.8 mm

Drain to Source Voltage (Vdss) :

100V

DS Breakdown Voltage-Min :

100 V

Package :

Tube

Power Dissipation (Max) :

480W (Tc)

Vgs (Max) :

±30V

Manufacturer :

IXYS

ECCN Code :

EAR99

Fall Time (Typ) :

31 ns

Tradename :

HiPerFET

Drain to Source Breakdown Voltage :

100V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code :

R-PSFM-T3

Turn-Off Delay Time :

42 ns

Input Capacitance (Ciss) (Max) @ Vds :

6900pF @ 25V

Max Power Dissipation :

480 W

Number of Terminations :

3

Element Configuration :

Single

Rds On Max :

6.4 mΩ

Product Status :

Active

RoHS Status :

ROHS3 Compliant

Qualification Status :

Not Qualified

Operating Mode :

ENHANCEMENT MODE

Published :

2006

Number of Terminals :

3

Pin Count :

3

FET Type :

N-Channel

Series :

TrenchMV™

Product Type :

MOSFET

Mounting Type :

Through Hole

Number of Pins :

3

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Case Connection :

DRAIN

Continuous Drain Current (ID) :

180A

Max Operating Temperature :

175 °C

Surface Mount :

No

Subcategory :

MOSFETs

Number of Channels :

1 Channel

Drain to Source Resistance :

6.4 mΩ

Vgs(th) (Max) @ Id :

4.5V @ 250μA

Power Dissipation :

480W