IXTQ180N085T
- Mfr.Part #
- IXTQ180N085T
- Manufacturer
- Littelfuse
- Package / Case
- TO-3P-3, SC-65-3
- Datasheet
- Download
- Description
- MOSFET N-CH 85V 180A TO3P
- Stock
- 16,667
- In Stock :
- 16,667
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drain to Source Voltage (Vdss) :
- 85V
- Drain to Source Breakdown Voltage :
- 85V
- Pbfree Code :
- yes
- Drain-source On Resistance-Max :
- 0.0055 Ω
- Number of Pins :
- 3
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Fall Time (Typ) :
- 65 ns
- Power Dissipation-Max :
- 430W Tc
- Terminal Position :
- Single
- Series :
- TrenchMV™
- RoHS Status :
- RoHS Compliant
- Operating Temperature :
- -55°C~175°C TJ
- Power Dissipation (Max) :
- 430W (Tc)
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Avalanche Energy Rating (Eas) :
- 1000 mJ
- Surface Mount :
- No
- DS Breakdown Voltage-Min :
- 85 V
- Additional Feature :
- AVALANCHE RATED
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Input Capacitance (Ciss) (Max) @ Vds :
- 7500pF @ 25V
- Packaging :
- Tube
- ECCN Code :
- EAR99
- FET Feature :
- --
- Qualification Status :
- Not Qualified
- FET Type :
- N-Channel
- Terminal Finish :
- Matte Tin (Sn)
- JESD-30 Code :
- R-PSFM-T3
- Vgs (Max) :
- ±20V
- Continuous Drain Current (ID) :
- 180A
- Number of Elements :
- 1
- Power Dissipation :
- 430W
- Rise Time :
- 70ns
- Transistor Element Material :
- SILICON
- Current - Continuous Drain (Id) @ 25°C :
- 180A Tc
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Number of Terminals :
- 3
- Product Status :
- Obsolete
- Transistor Application :
- SWITCHING
- Package Shape :
- RECTANGULAR
- Package :
- Tube
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Turn-Off Delay Time :
- 55 ns
- Resistance :
- 5.5mOhm
- Operating Mode :
- ENHANCEMENT MODE
- Number of Terminations :
- 3
- Case Connection :
- DRAIN
- Terminal Form :
- THROUGH-HOLE
- Package / Case :
- TO-3P-3, SC-65-3
- Power Dissipation-Max (Abs) :
- 430 W
- Pin Count :
- 3
- Element Configuration :
- Single
- JESD-609 Code :
- e3
- Published :
- 2006
- Mounting Type :
- Through Hole
- Reach Compliance Code :
- Compliant
- Mount :
- Through Hole
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Rds On (Max) @ Id, Vgs :
- 5.5m Ω @ 25A, 10V
- Polarity/Channel Type :
- N-Channel
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Lead Free :
- Lead Free
- Manufacturer :
- IXYS Corporation
- Gate Charge (Qg) (Max) @ Vgs :
- 170nC @ 10V
- Pulsed Drain Current-Max (IDM) :
- 480A
- Drain Current-Max (Abs) (ID) :
- 180 A
- Supplier Device Package :
- TO-3P
- Datasheets
- IXTQ180N085T

N-Channel Tube 5.5m Ω @ 25A, 10V ±20V 7500pF @ 25V 170nC @ 10V 85V TO-3P-3, SC-65-3
IXTQ180N085T Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 1000 mJ.A device's maximum input capacitance is 7500pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 180A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=85V, and this device has a drain-to-source breakdown voltage of 85V voltage.Its drain current is 180 A, and it is the maximum continuous current the device can conduct.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 55 ns.Its maximum pulsed drain current is 480A, which is also its maximum rating peak drainage current.For normal operation, maintain the DS breakdown voltage above 85 V.To operate this transistor, you need to apply a 85V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
IXTQ180N085T Features
the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 180A
a drain-to-source breakdown voltage of 85V voltage
the turn-off delay time is 55 ns
based on its rated peak drain current 480A.
a 85V drain to source voltage (Vdss)
IXTQ180N085T Applications
There are a lot of IXYS
IXTQ180N085T applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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