IXTQ180N085T

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Mfr.Part #
IXTQ180N085T
Manufacturer
Littelfuse
Package / Case
TO-3P-3, SC-65-3
Datasheet
Download
Description
MOSFET N-CH 85V 180A TO3P
Stock
16,667
In Stock :
16,667

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Drain to Source Voltage (Vdss) :
85V
Drain to Source Breakdown Voltage :
85V
Pbfree Code :
yes
Drain-source On Resistance-Max :
0.0055 Ω
Number of Pins :
3
Drive Voltage (Max Rds On,Min Rds On) :
10V
Fall Time (Typ) :
65 ns
Power Dissipation-Max :
430W Tc
Terminal Position :
Single
Series :
TrenchMV™
RoHS Status :
RoHS Compliant
Operating Temperature :
-55°C~175°C TJ
Power Dissipation (Max) :
430W (Tc)
Vgs(th) (Max) @ Id :
4V @ 250µA
Avalanche Energy Rating (Eas) :
1000 mJ
Surface Mount :
No
DS Breakdown Voltage-Min :
85 V
Additional Feature :
AVALANCHE RATED
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Input Capacitance (Ciss) (Max) @ Vds :
7500pF @ 25V
Packaging :
Tube
ECCN Code :
EAR99
FET Feature :
--
Qualification Status :
Not Qualified
FET Type :
N-Channel
Terminal Finish :
Matte Tin (Sn)
JESD-30 Code :
R-PSFM-T3
Vgs (Max) :
±20V
Continuous Drain Current (ID) :
180A
Number of Elements :
1
Power Dissipation :
430W
Rise Time :
70ns
Transistor Element Material :
SILICON
Current - Continuous Drain (Id) @ 25°C :
180A Tc
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Number of Terminals :
3
Product Status :
Obsolete
Transistor Application :
SWITCHING
Package Shape :
RECTANGULAR
Package :
Tube
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Turn-Off Delay Time :
55 ns
Resistance :
5.5mOhm
Operating Mode :
ENHANCEMENT MODE
Number of Terminations :
3
Case Connection :
DRAIN
Terminal Form :
THROUGH-HOLE
Package / Case :
TO-3P-3, SC-65-3
Power Dissipation-Max (Abs) :
430 W
Pin Count :
3
Element Configuration :
Single
JESD-609 Code :
e3
Published :
2006
Mounting Type :
Through Hole
Reach Compliance Code :
Compliant
Mount :
Through Hole
Configuration :
SINGLE WITH BUILT-IN DIODE
Rds On (Max) @ Id, Vgs :
5.5m Ω @ 25A, 10V
Polarity/Channel Type :
N-Channel
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Lead Free :
Lead Free
Manufacturer :
IXYS Corporation
Gate Charge (Qg) (Max) @ Vgs :
170nC @ 10V
Pulsed Drain Current-Max (IDM) :
480A
Drain Current-Max (Abs) (ID) :
180 A
Supplier Device Package :
TO-3P
Datasheets
IXTQ180N085T
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTQ180N085T from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Operating Temperature:-55°C~175°C TJ, Number of Terminations:3, Package / Case:TO-3P-3, SC-65-3, Mounting Type:Through Hole, IXTQ180N085T pinout, IXTQ180N085T datasheet PDF, IXTQ180N085T amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTQ180N085T ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTQ180N085T


N-Channel Tube 5.5m Ω @ 25A, 10V ±20V 7500pF @ 25V 170nC @ 10V 85V TO-3P-3, SC-65-3

IXTQ180N085T Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 1000 mJ.A device's maximum input capacitance is 7500pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 180A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=85V, and this device has a drain-to-source breakdown voltage of 85V voltage.Its drain current is 180 A, and it is the maximum continuous current the device can conduct.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 55 ns.Its maximum pulsed drain current is 480A, which is also its maximum rating peak drainage current.For normal operation, maintain the DS breakdown voltage above 85 V.To operate this transistor, you need to apply a 85V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.

IXTQ180N085T Features


the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 180A
a drain-to-source breakdown voltage of 85V voltage
the turn-off delay time is 55 ns
based on its rated peak drain current 480A.
a 85V drain to source voltage (Vdss)


IXTQ180N085T Applications


There are a lot of IXYS
IXTQ180N085T applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters
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