IXTQ170N10P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Voltage (Vdss) :

100V

Number of Elements :

1

Height :

20.3 mm

Manufacturer :

IXYS

Drain-source On Resistance-Max :

0.009Ohm

Qualification Status :

Not Qualified

RoHS Status :

ROHS3 Compliant

Rds On (Max) @ Id, Vgs :

9m Ω @ 500mA, 10V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Terminal Form :

THROUGH-HOLE

Power Dissipation :

714W

Published :

2006

Base Product Number :

IXTQ170

Turn-Off Delay Time :

90 ns

Power Dissipation (Max) :

715W (Tc)

REACH SVHC :

No SVHC

Series :

Polar™

Transistor Type :

1 N-Channel

Factory Lead Time :

24 Weeks

FET Feature :

--

Fall Time (Typ) :

33 ns

Operating Mode :

ENHANCEMENT MODE

Maximum Operating Temperature :

+ 175 C

Packaging :

Tube

FET Type :

N-Channel

Terminal Position :

Single

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Package :

Tube

Pbfree Code :

yes

Supplier Device Package :

TO-3P

Transistor Polarity :

N-Channel

Minimum Operating Temperature :

- 55 C

Gate to Source Voltage (Vgs) :

20V

Package / Case :

TO-3P-3, SC-65-3

Product Status :

Active

Polarity/Channel Type :

N-Channel

ECCN Code :

EAR99

Reach Compliance Code :

Compliant

JESD-30 Code :

R-PSFM-T3

Gate Charge (Qg) (Max) @ Vgs :

198nC @ 10V

Transistor Element Material :

SILICON

Number of Pins :

3

Threshold Voltage :

5V

Channel Mode :

Enhancement

Continuous Drain Current (ID) :

170A

Avalanche Energy Rating (Eas) :

2000 mJ

Configuration :

Single

Number of Terminations :

3

Drain Current-Max (Abs) (ID) :

170 A

Mount :

Through Hole

RoHS :

Details

Operating Temperature :

-55°C~175°C TJ

Vgs(th) (Max) @ Id :

5V @ 250μA

Package Shape :

RECTANGULAR

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mounting Style :

Through Hole

Product Type :

MOSFET

Brand :

IXYS

Number of Channels :

1 Channel

Element Configuration :

Single

Case Connection :

DRAIN

Vgs (Max) :

±20V

Transistor Application :

SWITCHING

Power Dissipation-Max :

715W Tc

Pin Count :

3

Current - Continuous Drain (Id) @ 25°C :

170A Tc

Surface Mount :

No

Pulsed Drain Current-Max (IDM) :

350 A

DS Breakdown Voltage-Min :

100 V

Product Category :

MOSFET

Length :

15.8 mm

Mounting Type :

Through Hole

Power Dissipation-Max (Abs) :

715 W

Width :

4.9 mm

Additional Feature :

AVALANCHE RATED

Input Capacitance (Ciss) (Max) @ Vds :

6000pF @ 25V

Rise Time :

50ns

Number of Terminals :

3

Terminal Finish :

Pure Tin (Sn)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Drain to Source Breakdown Voltage :

100V