IXTQ160N10T

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Mfr.Part #
IXTQ160N10T
Manufacturer
Littelfuse
Package / Case
TO-3P-3, SC-65-3
Datasheet
Download
Description
MOSFET N-CH 100V 160A TO3P
Stock
28,124
In Stock :
28,124

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Number of Elements :
1
Operating Mode :
ENHANCEMENT MODE
Product Status :
Active
Current - Continuous Drain (Id) @ 25°C :
160A Tc
Number of Terminations :
3
RoHS :
Details
Product Category :
MOSFET
Polarity/Channel Type :
N-Channel
Element Configuration :
Single
Number of Channels :
1 Channel
Length :
15.8 mm
Product Type :
MOSFET
Width :
4.9 mm
Number of Pins :
3
Tradename :
HiPerFET
Continuous Drain Current (ID) :
160A
Brand :
IXYS
Rise Time :
61ns
Qualification Status :
Not Qualified
Transistor Application :
SWITCHING
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Channel Mode :
Enhancement
Package :
Tube
Reach Compliance Code :
Unknown
FET Type :
N-Channel
Fall Time (Typ) :
42 ns
Drive Voltage (Max Rds On,Min Rds On) :
10V
Power Dissipation-Max :
430W Tc
Package Shape :
RECTANGULAR
ECCN Code :
EAR99
Operating Temperature :
-55°C~175°C TJ
Pin Count :
3
Gate Charge (Qg) (Max) @ Vgs :
132nC @ 10V
Power Dissipation :
430W
Surface Mount :
No
Drain to Source Breakdown Voltage :
100V
Mounting Style :
Through Hole
Terminal Finish :
PURE TIN
Pulsed Drain Current-Max (IDM) :
430 A
Power Dissipation-Max (Abs) :
430 W
Case Connection :
DRAIN
Package / Case :
TO-3P-3, SC-65-3
Rds On (Max) @ Id, Vgs :
7m Ω @ 25A, 10V
Terminal Position :
Single
Vgs(th) (Max) @ Id :
4.5V @ 250μA
Maximum Operating Temperature :
+ 175 C
Number of Terminals :
3
Height :
20.3 mm
Transistor Element Material :
SILICON
FET Feature :
--
Supplier Device Package :
TO-3P
Additional Feature :
AVALANCHE RATED
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Factory Lead Time :
8 Weeks
Turn-Off Delay Time :
49 ns
Configuration :
Single
Drain to Source Voltage (Vdss) :
100V
Published :
2006
Packaging :
Tube
Drain-source On Resistance-Max :
0.007Ohm
Power Dissipation (Max) :
430W (Tc)
Transistor Polarity :
N-Channel
Input Capacitance (Ciss) (Max) @ Vds :
6600pF @ 25V
JESD-30 Code :
R-PSFM-T3
Terminal Form :
THROUGH-HOLE
Drain Current-Max (Abs) (ID) :
160 A
Transistor Type :
1 N-Channel
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Pbfree Code :
yes
Base Product Number :
IXTQ160
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Minimum Operating Temperature :
- 55 C
Manufacturer :
IXYS
JESD-609 Code :
e3
Series :
TrenchMV™
Vgs (Max) :
±30V
Mounting Type :
Through Hole
Mount :
Through Hole
RoHS Status :
ROHS3 Compliant
DS Breakdown Voltage-Min :
100 V
Avalanche Energy Rating (Eas) :
500 mJ
Datasheets
IXTQ160N10T
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTQ160N10T from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Number of Channels:1 Channel, Number of Pins:3, Operating Temperature:-55°C~175°C TJ, Package / Case:TO-3P-3, SC-65-3, Mounting Type:Through Hole, IXTQ160N10T pinout, IXTQ160N10T datasheet PDF, IXTQ160N10T amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTQ160N10T ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTQ160N10T


N-Channel Tube 7m Ω @ 25A, 10V ±30V 6600pF @ 25V 132nC @ 10V 100V TO-3P-3, SC-65-3

IXTQ160N10T Overview


Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 500 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 6600pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 160A.With a drain-source breakdown voltage of 100V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 100V.160 A is the drain current of this device, which is the maximum continuous current transistor can carry.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 49 ns.Peak drain current for this device is 430 A, which is its maximum pulsed drain current.To maintain normal operation, the DS breakdown voltage should be kept above 100 V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 100V.Using drive voltage (10V) reduces this device's overall power consumption.

IXTQ160N10T Features


the avalanche energy rating (Eas) is 500 mJ
a continuous drain current (ID) of 160A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 49 ns
based on its rated peak drain current 430 A.
a 100V drain to source voltage (Vdss)


IXTQ160N10T Applications


There are a lot of IXYS
IXTQ160N10T applications of single MOSFETs transistors.


  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
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