IXTQ160N10T
- Mfr.Part #
- IXTQ160N10T
- Manufacturer
- Littelfuse
- Package / Case
- TO-3P-3, SC-65-3
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 160A TO3P
- Stock
- 28,124
- In Stock :
- 28,124
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Elements :
- 1
- Operating Mode :
- ENHANCEMENT MODE
- Product Status :
- Active
- Current - Continuous Drain (Id) @ 25°C :
- 160A Tc
- Number of Terminations :
- 3
- RoHS :
- Details
- Product Category :
- MOSFET
- Polarity/Channel Type :
- N-Channel
- Element Configuration :
- Single
- Number of Channels :
- 1 Channel
- Length :
- 15.8 mm
- Product Type :
- MOSFET
- Width :
- 4.9 mm
- Number of Pins :
- 3
- Tradename :
- HiPerFET
- Continuous Drain Current (ID) :
- 160A
- Brand :
- IXYS
- Rise Time :
- 61ns
- Qualification Status :
- Not Qualified
- Transistor Application :
- SWITCHING
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Channel Mode :
- Enhancement
- Package :
- Tube
- Reach Compliance Code :
- Unknown
- FET Type :
- N-Channel
- Fall Time (Typ) :
- 42 ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Power Dissipation-Max :
- 430W Tc
- Package Shape :
- RECTANGULAR
- ECCN Code :
- EAR99
- Operating Temperature :
- -55°C~175°C TJ
- Pin Count :
- 3
- Gate Charge (Qg) (Max) @ Vgs :
- 132nC @ 10V
- Power Dissipation :
- 430W
- Surface Mount :
- No
- Drain to Source Breakdown Voltage :
- 100V
- Mounting Style :
- Through Hole
- Terminal Finish :
- PURE TIN
- Pulsed Drain Current-Max (IDM) :
- 430 A
- Power Dissipation-Max (Abs) :
- 430 W
- Case Connection :
- DRAIN
- Package / Case :
- TO-3P-3, SC-65-3
- Rds On (Max) @ Id, Vgs :
- 7m Ω @ 25A, 10V
- Terminal Position :
- Single
- Vgs(th) (Max) @ Id :
- 4.5V @ 250μA
- Maximum Operating Temperature :
- + 175 C
- Number of Terminals :
- 3
- Height :
- 20.3 mm
- Transistor Element Material :
- SILICON
- FET Feature :
- --
- Supplier Device Package :
- TO-3P
- Additional Feature :
- AVALANCHE RATED
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Factory Lead Time :
- 8 Weeks
- Turn-Off Delay Time :
- 49 ns
- Configuration :
- Single
- Drain to Source Voltage (Vdss) :
- 100V
- Published :
- 2006
- Packaging :
- Tube
- Drain-source On Resistance-Max :
- 0.007Ohm
- Power Dissipation (Max) :
- 430W (Tc)
- Transistor Polarity :
- N-Channel
- Input Capacitance (Ciss) (Max) @ Vds :
- 6600pF @ 25V
- JESD-30 Code :
- R-PSFM-T3
- Terminal Form :
- THROUGH-HOLE
- Drain Current-Max (Abs) (ID) :
- 160 A
- Transistor Type :
- 1 N-Channel
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pbfree Code :
- yes
- Base Product Number :
- IXTQ160
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Minimum Operating Temperature :
- - 55 C
- Manufacturer :
- IXYS
- JESD-609 Code :
- e3
- Series :
- TrenchMV™
- Vgs (Max) :
- ±30V
- Mounting Type :
- Through Hole
- Mount :
- Through Hole
- RoHS Status :
- ROHS3 Compliant
- DS Breakdown Voltage-Min :
- 100 V
- Avalanche Energy Rating (Eas) :
- 500 mJ
- Datasheets
- IXTQ160N10T

N-Channel Tube 7m Ω @ 25A, 10V ±30V 6600pF @ 25V 132nC @ 10V 100V TO-3P-3, SC-65-3
IXTQ160N10T Overview
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 500 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 6600pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 160A.With a drain-source breakdown voltage of 100V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 100V.160 A is the drain current of this device, which is the maximum continuous current transistor can carry.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 49 ns.Peak drain current for this device is 430 A, which is its maximum pulsed drain current.To maintain normal operation, the DS breakdown voltage should be kept above 100 V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 100V.Using drive voltage (10V) reduces this device's overall power consumption.
IXTQ160N10T Features
the avalanche energy rating (Eas) is 500 mJ
a continuous drain current (ID) of 160A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 49 ns
based on its rated peak drain current 430 A.
a 100V drain to source voltage (Vdss)
IXTQ160N10T Applications
There are a lot of IXYS
IXTQ160N10T applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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