IXTQ160N075T

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Mfr.Part #
IXTQ160N075T
Manufacturer
Littelfuse
Package / Case
TO-3P-3, SC-65-3
Datasheet
Download
Description
MOSFET N-CH 75V 160A TO3P
Stock
16,628
In Stock :
16,628

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
FET Feature :
--
RoHS :
Compliant
Reach Compliance Code :
Compliant
Transistor Element Material :
SILICON
Drive Voltage (Max Rds On,Min Rds On) :
10V
Package :
Tube
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Packaging :
Tube
Rds On (Max) @ Id, Vgs :
6m Ω @ 25A, 10V
Terminal Form :
THROUGH-HOLE
Pin Count :
3
Package Shape :
RECTANGULAR
Additional Feature :
AVALANCHE RATED
Power Dissipation (Max) :
360W (Tc)
Min Operating Temperature :
-55 °C
Supplier Device Package :
TO-3P
Drain-source On Resistance-Max :
0.006 Ω
Max Operating Temperature :
175 °C
Polarity/Channel Type :
N-Channel
Published :
2006
Number of Elements :
1
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Power Dissipation-Max :
360W Tc
Power Dissipation :
360W
Max Power Dissipation :
360 W
JESD-609 Code :
e3
Vgs (Max) :
±20V
DS Breakdown Voltage-Min :
75 V
Surface Mount :
No
ECCN Code :
EAR99
Terminal Finish :
Matte Tin (Sn)
Product Status :
Obsolete
Mount :
Through Hole
Turn-Off Delay Time :
60 ns
Element Configuration :
Single
Number of Terminations :
3
Lead Free :
Lead Free
Continuous Drain Current (ID) :
160A
Fall Time (Typ) :
60 ns
Mounting Type :
Through Hole
Rise Time :
64ns
Transistor Application :
SWITCHING
Rds On Max :
6 mΩ
Resistance :
6mOhm
Case Connection :
DRAIN
Input Capacitance :
4.95 nF
Operating Temperature :
-55°C~175°C TJ
Pulsed Drain Current-Max (IDM) :
430 A
Operating Mode :
ENHANCEMENT MODE
Drain to Source Voltage (Vdss) :
75 V
Drain to Source Breakdown Voltage :
75V
Pbfree Code :
yes
Manufacturer :
IXYS Corporation
JESD-30 Code :
R-PSFM-T3
Input Capacitance (Ciss) (Max) @ Vds :
4950pF @ 25V
Current - Continuous Drain (Id) @ 25°C :
160A Tc
Drain to Source Resistance :
6 mΩ
Avalanche Energy Rating (Eas) :
750 mJ
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Vgs(th) (Max) @ Id :
4V @ 250µA
Number of Terminals :
3
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Configuration :
SINGLE WITH BUILT-IN DIODE
Series :
TrenchMV™
Qualification Status :
Not Qualified
FET Type :
N-Channel
Package / Case :
TO-3P-3, SC-65-3
RoHS Status :
RoHS Compliant
Terminal Position :
Single
Number of Pins :
3
Gate Charge (Qg) (Max) @ Vgs :
112nC @ 10V
Datasheets
IXTQ160N075T
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTQ160N075T from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Mounting Type:Through Hole, Operating Temperature:-55°C~175°C TJ, Package / Case:TO-3P-3, SC-65-3, Number of Pins:3, IXTQ160N075T pinout, IXTQ160N075T datasheet PDF, IXTQ160N075T amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTQ160N075T ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTQ160N075T


N-Channel Tube 6m Ω @ 25A, 10V ±20V 4950pF @ 25V 112nC @ 10V 75 V TO-3P-3, SC-65-3

IXTQ160N075T Overview


There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 750 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 4950pF @ 25V.This device has a continuous drain current (ID) of [160A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=75V, the drain-source breakdown voltage is 75V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 60 ns.A maximum pulsed drain current of 430 A is the maximum peak drain current rated for this device.MOSFETs have 6 mΩ resistance between the drain and the source when biased into the on state by a gate-to-source voltage (VGS).In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 75 V.In order to operate this transistor, a voltage of 75 V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).

IXTQ160N075T Features


the avalanche energy rating (Eas) is 750 mJ
a continuous drain current (ID) of 160A
a drain-to-source breakdown voltage of 75V voltage
the turn-off delay time is 60 ns
based on its rated peak drain current 430 A.
single MOSFETs transistor is 6 mΩ
a 75 V drain to source voltage (Vdss)


IXTQ160N075T Applications


There are a lot of IXYS
IXTQ160N075T applications of single MOSFETs transistors.


  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
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