IXTQ160N075T
- Mfr.Part #
- IXTQ160N075T
- Manufacturer
- Littelfuse
- Package / Case
- TO-3P-3, SC-65-3
- Datasheet
- Download
- Description
- MOSFET N-CH 75V 160A TO3P
- Stock
- 16,628
- In Stock :
- 16,628
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- FET Feature :
- --
- RoHS :
- Compliant
- Reach Compliance Code :
- Compliant
- Transistor Element Material :
- SILICON
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Package :
- Tube
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Packaging :
- Tube
- Rds On (Max) @ Id, Vgs :
- 6m Ω @ 25A, 10V
- Terminal Form :
- THROUGH-HOLE
- Pin Count :
- 3
- Package Shape :
- RECTANGULAR
- Additional Feature :
- AVALANCHE RATED
- Power Dissipation (Max) :
- 360W (Tc)
- Min Operating Temperature :
- -55 °C
- Supplier Device Package :
- TO-3P
- Drain-source On Resistance-Max :
- 0.006 Ω
- Max Operating Temperature :
- 175 °C
- Polarity/Channel Type :
- N-Channel
- Published :
- 2006
- Number of Elements :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation-Max :
- 360W Tc
- Power Dissipation :
- 360W
- Max Power Dissipation :
- 360 W
- JESD-609 Code :
- e3
- Vgs (Max) :
- ±20V
- DS Breakdown Voltage-Min :
- 75 V
- Surface Mount :
- No
- ECCN Code :
- EAR99
- Terminal Finish :
- Matte Tin (Sn)
- Product Status :
- Obsolete
- Mount :
- Through Hole
- Turn-Off Delay Time :
- 60 ns
- Element Configuration :
- Single
- Number of Terminations :
- 3
- Lead Free :
- Lead Free
- Continuous Drain Current (ID) :
- 160A
- Fall Time (Typ) :
- 60 ns
- Mounting Type :
- Through Hole
- Rise Time :
- 64ns
- Transistor Application :
- SWITCHING
- Rds On Max :
- 6 mΩ
- Resistance :
- 6mOhm
- Case Connection :
- DRAIN
- Input Capacitance :
- 4.95 nF
- Operating Temperature :
- -55°C~175°C TJ
- Pulsed Drain Current-Max (IDM) :
- 430 A
- Operating Mode :
- ENHANCEMENT MODE
- Drain to Source Voltage (Vdss) :
- 75 V
- Drain to Source Breakdown Voltage :
- 75V
- Pbfree Code :
- yes
- Manufacturer :
- IXYS Corporation
- JESD-30 Code :
- R-PSFM-T3
- Input Capacitance (Ciss) (Max) @ Vds :
- 4950pF @ 25V
- Current - Continuous Drain (Id) @ 25°C :
- 160A Tc
- Drain to Source Resistance :
- 6 mΩ
- Avalanche Energy Rating (Eas) :
- 750 mJ
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Number of Terminals :
- 3
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Series :
- TrenchMV™
- Qualification Status :
- Not Qualified
- FET Type :
- N-Channel
- Package / Case :
- TO-3P-3, SC-65-3
- RoHS Status :
- RoHS Compliant
- Terminal Position :
- Single
- Number of Pins :
- 3
- Gate Charge (Qg) (Max) @ Vgs :
- 112nC @ 10V
- Datasheets
- IXTQ160N075T

N-Channel Tube 6m Ω @ 25A, 10V ±20V 4950pF @ 25V 112nC @ 10V 75 V TO-3P-3, SC-65-3
IXTQ160N075T Overview
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 750 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 4950pF @ 25V.This device has a continuous drain current (ID) of [160A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=75V, the drain-source breakdown voltage is 75V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 60 ns.A maximum pulsed drain current of 430 A is the maximum peak drain current rated for this device.MOSFETs have 6 mΩ resistance between the drain and the source when biased into the on state by a gate-to-source voltage (VGS).In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 75 V.In order to operate this transistor, a voltage of 75 V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).
IXTQ160N075T Features
the avalanche energy rating (Eas) is 750 mJ
a continuous drain current (ID) of 160A
a drain-to-source breakdown voltage of 75V voltage
the turn-off delay time is 60 ns
based on its rated peak drain current 430 A.
single MOSFETs transistor is 6 mΩ
a 75 V drain to source voltage (Vdss)
IXTQ160N075T Applications
There are a lot of IXYS
IXTQ160N075T applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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