IXTQ150N15P
- Mfr.Part #
- IXTQ150N15P
- Manufacturer
- Littelfuse
- Package / Case
- TO-3P-3, SC-65-3
- Datasheet
- Download
- Description
- MOSFET N-CH 150V 150A TO3P
- Stock
- 1
- In Stock :
- 1
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- RoHS :
- Details
- Surface Mount :
- No
- Product Status :
- Active
- Qualification Status :
- Not Qualified
- Minimum Operating Temperature :
- - 55 C
- Power Dissipation (Max) :
- 714W (Tc)
- Terminal Position :
- Single
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Transistor Type :
- 1 N-Channel
- Polarity/Channel Type :
- N-Channel
- Additional Feature :
- AVALANCHE RATED
- Subcategory :
- MOSFETs
- Maximum Operating Temperature :
- + 175 C
- Height :
- 20.3 mm
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Product Type :
- MOSFET
- Gate to Source Voltage (Vgs) :
- 20V
- Turn-Off Delay Time :
- 100 ns
- Supplier Device Package :
- TO-3P
- Avalanche Energy Rating (Eas) :
- 2500 mJ
- Number of Elements :
- 1
- Drain to Source Breakdown Voltage :
- 150V
- Brand :
- IXYS
- Packaging :
- Tube
- Rise Time :
- 33ns
- Vgs (Max) :
- ±20V
- Terminal Form :
- THROUGH-HOLE
- Drain to Source Voltage (Vdss) :
- 150V
- Transistor Polarity :
- N-Channel
- Number of Terminations :
- 3
- Power Dissipation-Max :
- 714W Tc
- Pulsed Drain Current-Max (IDM) :
- 340 A
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Operating Mode :
- ENHANCEMENT MODE
- Channel Mode :
- Enhancement
- JESD-30 Code :
- R-PSFM-T3
- Width :
- 4.9 mm
- RoHS Status :
- ROHS3 Compliant
- Case Connection :
- DRAIN
- Operating Temperature :
- -55°C~175°C TJ
- Terminal Finish :
- Matte Tin (Sn)
- Input Capacitance (Ciss) (Max) @ Vds :
- 5800pF @ 25V
- Type :
- PolarHT Power MOSFET
- Manufacturer :
- IXYS
- Transistor Application :
- SWITCHING
- Rds On (Max) @ Id, Vgs :
- 13m Ω @ 500mA, 10V
- Current - Continuous Drain (Id) @ 25°C :
- 150A Tc
- Transistor Element Material :
- SILICON
- Base Product Number :
- IXTQ150
- Drain-source On Resistance-Max :
- 0.013 Ω
- Pbfree Code :
- yes
- Continuous Drain Current (ID) :
- 150A
- Package Shape :
- RECTANGULAR
- Published :
- 2006
- Series :
- PolarHT™
- DS Breakdown Voltage-Min :
- 150 V
- JESD-609 Code :
- e3
- Mount :
- Through Hole
- Product Category :
- MOSFET
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Length :
- 15.8 mm
- Reach Compliance Code :
- Compliant
- Element Configuration :
- Single
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Factory Lead Time :
- 24 Weeks
- Pin Count :
- 3
- Number of Terminals :
- 3
- Package :
- Tube
- Number of Channels :
- 1 Channel
- Number of Pins :
- 3
- REACH SVHC :
- No SVHC
- FET Feature :
- --
- FET Type :
- N-Channel
- Package / Case :
- TO-3P-3, SC-65-3
- Mounting Type :
- Through Hole
- ECCN Code :
- EAR99
- Configuration :
- Single
- Tradename :
- PolarHT
- Fall Time (Typ) :
- 28 ns
- Threshold Voltage :
- 5V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Style :
- Through Hole
- Gate Charge (Qg) (Max) @ Vgs :
- 190nC @ 10V
- Power Dissipation :
- 714W
- Datasheets
- IXTQ150N15P

N-Channel Tube 13m Ω @ 500mA, 10V ±20V 5800pF @ 25V 190nC @ 10V 150V TO-3P-3, SC-65-3
IXTQ150N15P Overview
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 2500 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 5800pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 150A.With a drain-source breakdown voltage of 150V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 150V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 100 ns.Peak drain current for this device is 340 A, which is its maximum pulsed drain current.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.5V is the threshold voltage at which an electrical device activates any of its operations.To maintain normal operation, the DS breakdown voltage should be kept above 150 V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 150V.Using drive voltage (10V) reduces this device's overall power consumption.
IXTQ150N15P Features
the avalanche energy rating (Eas) is 2500 mJ
a continuous drain current (ID) of 150A
a drain-to-source breakdown voltage of 150V voltage
the turn-off delay time is 100 ns
based on its rated peak drain current 340 A.
a threshold voltage of 5V
a 150V drain to source voltage (Vdss)
IXTQ150N15P Applications
There are a lot of IXYS
IXTQ150N15P applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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