IXTK90N25L2

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Terminals :

3

Continuous Drain Current (ID) :

90A

Operating Mode :

ENHANCEMENT MODE

Drain-Source On-Volt :

250(V)

Transistor Application :

SWITCHING

Channel Mode :

Enhancement

Drain-source On Resistance-Max :

0.033 Ω

Product Status :

Active

Product Category :

MOSFET

RoHS Status :

ROHS3 Compliant

Element Configuration :

Single

Rise Time :

175 ns

Continuous Drain Current :

90(A)

Pulsed Drain Current-Max (IDM) :

360 A

Package Type :

TO-264

Minimum Operating Temperature :

- 55 C

Rds On (Max) @ Id, Vgs :

33m Ω @ 45A, 10V

Configuration :

Single

Length :

20.29 mm

Threshold Voltage :

2V

Pbfree Code :

yes

Operating Temperature Classification :

Military

Pin Count :

3

FET Type :

N-Channel

Resistance :

33mOhm

Maximum Operating Temperature :

+ 150 C

Terminal Finish :

TIN SILVER COPPER

Factory Lead Time :

28 Weeks

Vgs(th) (Max) @ Id :

4.5V @ 3mA

FET Feature :

--

Lead Free :

Lead Free

REACH SVHC :

No SVHC

Drain Current-Max (Abs) (ID) :

90 A

Case Connection :

DRAIN

Terminal Form :

THROUGH-HOLE

Tradename :

Linear L2

Power Dissipation :

960W

Gate-Source Voltage (Max) :

20(V)

Number of Elements :

1

Vgs (Max) :

±20V

Type :

Power MOSFET

Brand :

IXYS

Polarity/Channel Type :

N-Channel

Series :

Linear L2™

Rad Hardened :

No

Supplier Device Package :

TO-264 (IXTK)

Mounting Style :

Through Hole

Number of Pins :

3

Mount :

Through Hole

Nominal Vgs :

2 V

Polarity :

N

Manufacturer :

IXYS

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS :

Details

Packaging :

Tube

Drain to Source Voltage (Vdss) :

250V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Terminations :

3

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Operating Temp Range :

-55C to 150C

Package / Case :

TO-264-3, TO-264AA

Number of Channels :

1 Channel

JESD-30 Code :

R-PSFM-T3

Height :

26.59 mm

Input Capacitance (Ciss) (Max) @ Vds :

23000pF @ 25V

Published :

2008

Reach Compliance Code :

Unknown

Transistor Polarity :

N-Channel

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Terminal Position :

Single

DS Breakdown Voltage-Min :

250 V

Transistor Type :

1 N-Channel

JEDEC-95 Code :

TO-264AA

Qualification Status :

Not Qualified

Product Type :

MOSFET

Additional Feature :

AVALANCHE RATED

Width :

5.31 mm

Current - Continuous Drain (Id) @ 25°C :

90A Tc

Power Dissipation-Max (Abs) :

960 W

Package :

Tube

Package Shape :

RECTANGULAR

Base Product Number :

IXTK90

Mounting :

Through Hole

Power Dissipation (Max) :

960W (Tc)

ECCN Code :

EAR99

Gate Charge (Qg) (Max) @ Vgs :

640nC @ 10V

Surface Mount :

No

Avalanche Energy Rating (Eas) :

3000 mJ

Drain to Source Breakdown Voltage :

250V

Power Dissipation-Max :

960W Tc

JESD-609 Code :

e1

Mounting Type :

Through Hole

Gate to Source Voltage (Vgs) :

20V

Operating Temperature :

-55°C~150°C TJ