IXTK90N25L2

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Mounting Type :

Through Hole

FET Type :

N-Channel

Power Dissipation :

960W

Avalanche Energy Rating (Eas) :

3000 mJ

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Channels :

1 Channel

Input Capacitance (Ciss) (Max) @ Vds :

23000pF @ 25V

Minimum Operating Temperature :

- 55 C

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Package / Case :

TO-264-3, TO-264AA

Factory Lead Time :

28 Weeks

Product Category :

MOSFET

Transistor Application :

SWITCHING

Series :

Linear L2™

Terminal Form :

THROUGH-HOLE

Pbfree Code :

yes

Gate to Source Voltage (Vgs) :

20V

Number of Pins :

3

Lead Free :

Lead Free

Rad Hardened :

No

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Resistance :

33mOhm

Terminal Finish :

TIN SILVER COPPER

Current - Continuous Drain (Id) @ 25°C :

90A Tc

Power Dissipation (Max) :

960W (Tc)

Published :

2008

Vgs (Max) :

±20V

Continuous Drain Current :

90(A)

Width :

5.31 mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Voltage (Vdss) :

250V

Transistor Element Material :

SILICON

Gate-Source Voltage (Max) :

20(V)

Surface Mount :

No

RoHS Status :

ROHS3 Compliant

DS Breakdown Voltage-Min :

250 V

Configuration :

Single

Supplier Device Package :

TO-264 (IXTK)

Packaging :

Tube

Polarity/Channel Type :

N-Channel

Additional Feature :

AVALANCHE RATED

Product Type :

MOSFET

Operating Temp Range :

-55C to 150C

Mounting Style :

Through Hole

Maximum Operating Temperature :

+ 150 C

Package Type :

TO-264

Drain to Source Breakdown Voltage :

250V

Mounting :

Through Hole

Tradename :

Linear L2

Vgs(th) (Max) @ Id :

4.5V @ 3mA

Polarity :

N

Rds On (Max) @ Id, Vgs :

33m Ω @ 45A, 10V

Drain-Source On-Volt :

250(V)

ECCN Code :

EAR99

JESD-30 Code :

R-PSFM-T3

Operating Temperature :

-55°C~150°C TJ

JEDEC-95 Code :

TO-264AA

Mount :

Through Hole

Operating Temperature Classification :

Military

Number of Terminals :

3

Threshold Voltage :

2V

Channel Mode :

Enhancement

Brand :

IXYS

FET Feature :

--

Transistor Type :

1 N-Channel

Package Shape :

RECTANGULAR

REACH SVHC :

No SVHC

Rise Time :

175 ns

Case Connection :

DRAIN

Product Status :

Active

JESD-609 Code :

e1

Continuous Drain Current (ID) :

90A

Type :

Power MOSFET

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE

Reach Compliance Code :

Unknown

Manufacturer :

IXYS

Height :

26.59 mm

Terminal Position :

Single

Drain-source On Resistance-Max :

0.033 Ω

Package :

Tube

Number of Terminations :

3

Nominal Vgs :

2 V

Length :

20.29 mm

Qualification Status :

Not Qualified

RoHS :

Details

Base Product Number :

IXTK90

Transistor Polarity :

N-Channel

Element Configuration :

Single

Pulsed Drain Current-Max (IDM) :

360 A

Power Dissipation-Max (Abs) :

960 W

Drain Current-Max (Abs) (ID) :

90 A

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Gate Charge (Qg) (Max) @ Vgs :

640nC @ 10V

Pin Count :

3

Power Dissipation-Max :

960W Tc