IXTK110N20L2

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Mfr.Part #
IXTK110N20L2
Manufacturer
Littelfuse
Package / Case
TO-264-3, TO-264AA
Datasheet
Download
Description
MOSFET N-CH 200V 110A TO264
Stock
30,393
In Stock :
30,393

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Pulsed Drain Current-Max (IDM) :
275A
Operating Temperature :
-55°C~150°C TJ
ECCN Code :
EAR99
Pin Count :
3
Rise Time :
100 ns
Series :
Linear L2™
Mounting Style :
Through Hole
Rds On (Max) @ Id, Vgs :
24m Ω @ 55A, 10V
Tradename :
Linear L2
Width :
5.31 mm
Product Type :
MOSFET
Surface Mount :
No
Package / Case :
TO-264-3, TO-264AA
Number of Terminations :
3
Number of Terminals :
3
Terminal Position :
Single
Package Shape :
RECTANGULAR
Brand :
IXYS
JESD-30 Code :
R-PSFM-T3
FET Feature :
--
Terminal Form :
THROUGH-HOLE
Manufacturer :
IXYS
Packaging :
Tube
Pbfree Code :
yes
Vgs(th) (Max) @ Id :
4.5V @ 3mA
RoHS :
Details
Power Dissipation :
960W
Height :
26.59 mm
JESD-609 Code :
e1
Lead Free :
Lead Free
Current - Continuous Drain (Id) @ 25°C :
110A Tc
Configuration :
SINGLE WITH BUILT-IN DIODE
Transistor Type :
1 N-Channel
Base Product Number :
IXTK110
Additional Feature :
AVALANCHE RATED
Qualification Status :
Not Qualified
Product Category :
MOSFET
Type :
LinearL2 Power MOSFET
Drain to Source Voltage (Vdss) :
200V
DS Breakdown Voltage-Min :
200V
Transistor Element Material :
SILICON
Power Dissipation-Max (Abs) :
960 W
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
FET Type :
N-Channel
Channel Mode :
Enhancement
Transistor Application :
AMPLIFIER
Power Dissipation-Max :
960W Tc
Mount :
Through Hole
Drain Current-Max (Abs) (ID) :
110 A
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Avalanche Energy Rating (Eas) :
5000 mJ
Package :
Tube
RoHS Status :
ROHS3 Compliant
Gate Charge (Qg) (Max) @ Vgs :
500nC @ 10V
Polarity/Channel Type :
N-Channel
Supplier Device Package :
TO-264 (IXTK)
Number of Channels :
1 Channel
Maximum Operating Temperature :
+ 150 C
Transistor Polarity :
N-Channel
Operating Mode :
ENHANCEMENT MODE
Terminal Finish :
TIN SILVER COPPER
Drive Voltage (Max Rds On,Min Rds On) :
10V
Vgs (Max) :
±20V
Continuous Drain Current (ID) :
110A
Published :
2009
Case Connection :
DRAIN
Mounting Type :
Through Hole
Radiation Hardening :
No
Input Capacitance (Ciss) (Max) @ Vds :
23000pF @ 25V
JEDEC-95 Code :
TO-264AA
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Factory Lead Time :
28 Weeks
Reach Compliance Code :
Compliant
Length :
20.29 mm
Minimum Operating Temperature :
- 55 C
Number of Elements :
1
Drain-source On Resistance-Max :
0.024Ohm
Product Status :
Active
Power Dissipation (Max) :
960W (Tc)
Datasheets
IXTK110N20L2
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTK110N20L2 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Package / Case:TO-264-3, TO-264AA, Number of Terminations:3, Type:LinearL2 Power MOSFET, Number of Channels:1 Channel, Mounting Type:Through Hole, IXTK110N20L2 pinout, IXTK110N20L2 datasheet PDF, IXTK110N20L2 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTK110N20L2 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTK110N20L2


N-Channel Tube 24m Ω @ 55A, 10V ±20V 23000pF @ 25V 500nC @ 10V 200V TO-264-3, TO-264AA

IXTK110N20L2 Overview


There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 5000 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 23000pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 110A amps.A device can conduct a maximum continuous current of [110 A] according to its drain current.As far as peak drain current is concerned, its maximum pulsed current is 275A.The DS breakdown voltage should be maintained above 200V to maintain normal operation.To operate this transistor, you will need a 200V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).

IXTK110N20L2 Features


the avalanche energy rating (Eas) is 5000 mJ
a continuous drain current (ID) of 110A
based on its rated peak drain current 275A.
a 200V drain to source voltage (Vdss)


IXTK110N20L2 Applications


There are a lot of IXYS
IXTK110N20L2 applications of single MOSFETs transistors.


  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
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