IXTK110N20L2
- Mfr.Part #
- IXTK110N20L2
- Manufacturer
- Littelfuse
- Package / Case
- TO-264-3, TO-264AA
- Datasheet
- Download
- Description
- MOSFET N-CH 200V 110A TO264
- Stock
- 30,393
- In Stock :
- 30,393
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Pulsed Drain Current-Max (IDM) :
- 275A
- Operating Temperature :
- -55°C~150°C TJ
- ECCN Code :
- EAR99
- Pin Count :
- 3
- Rise Time :
- 100 ns
- Series :
- Linear L2™
- Mounting Style :
- Through Hole
- Rds On (Max) @ Id, Vgs :
- 24m Ω @ 55A, 10V
- Tradename :
- Linear L2
- Width :
- 5.31 mm
- Product Type :
- MOSFET
- Surface Mount :
- No
- Package / Case :
- TO-264-3, TO-264AA
- Number of Terminations :
- 3
- Number of Terminals :
- 3
- Terminal Position :
- Single
- Package Shape :
- RECTANGULAR
- Brand :
- IXYS
- JESD-30 Code :
- R-PSFM-T3
- FET Feature :
- --
- Terminal Form :
- THROUGH-HOLE
- Manufacturer :
- IXYS
- Packaging :
- Tube
- Pbfree Code :
- yes
- Vgs(th) (Max) @ Id :
- 4.5V @ 3mA
- RoHS :
- Details
- Power Dissipation :
- 960W
- Height :
- 26.59 mm
- JESD-609 Code :
- e1
- Lead Free :
- Lead Free
- Current - Continuous Drain (Id) @ 25°C :
- 110A Tc
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Transistor Type :
- 1 N-Channel
- Base Product Number :
- IXTK110
- Additional Feature :
- AVALANCHE RATED
- Qualification Status :
- Not Qualified
- Product Category :
- MOSFET
- Type :
- LinearL2 Power MOSFET
- Drain to Source Voltage (Vdss) :
- 200V
- DS Breakdown Voltage-Min :
- 200V
- Transistor Element Material :
- SILICON
- Power Dissipation-Max (Abs) :
- 960 W
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- FET Type :
- N-Channel
- Channel Mode :
- Enhancement
- Transistor Application :
- AMPLIFIER
- Power Dissipation-Max :
- 960W Tc
- Mount :
- Through Hole
- Drain Current-Max (Abs) (ID) :
- 110 A
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Avalanche Energy Rating (Eas) :
- 5000 mJ
- Package :
- Tube
- RoHS Status :
- ROHS3 Compliant
- Gate Charge (Qg) (Max) @ Vgs :
- 500nC @ 10V
- Polarity/Channel Type :
- N-Channel
- Supplier Device Package :
- TO-264 (IXTK)
- Number of Channels :
- 1 Channel
- Maximum Operating Temperature :
- + 150 C
- Transistor Polarity :
- N-Channel
- Operating Mode :
- ENHANCEMENT MODE
- Terminal Finish :
- TIN SILVER COPPER
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Vgs (Max) :
- ±20V
- Continuous Drain Current (ID) :
- 110A
- Published :
- 2009
- Case Connection :
- DRAIN
- Mounting Type :
- Through Hole
- Radiation Hardening :
- No
- Input Capacitance (Ciss) (Max) @ Vds :
- 23000pF @ 25V
- JEDEC-95 Code :
- TO-264AA
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Factory Lead Time :
- 28 Weeks
- Reach Compliance Code :
- Compliant
- Length :
- 20.29 mm
- Minimum Operating Temperature :
- - 55 C
- Number of Elements :
- 1
- Drain-source On Resistance-Max :
- 0.024Ohm
- Product Status :
- Active
- Power Dissipation (Max) :
- 960W (Tc)
- Datasheets
- IXTK110N20L2

N-Channel Tube 24m Ω @ 55A, 10V ±20V 23000pF @ 25V 500nC @ 10V 200V TO-264-3, TO-264AA
IXTK110N20L2 Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 5000 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 23000pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 110A amps.A device can conduct a maximum continuous current of [110 A] according to its drain current.As far as peak drain current is concerned, its maximum pulsed current is 275A.The DS breakdown voltage should be maintained above 200V to maintain normal operation.To operate this transistor, you will need a 200V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).
IXTK110N20L2 Features
the avalanche energy rating (Eas) is 5000 mJ
a continuous drain current (ID) of 110A
based on its rated peak drain current 275A.
a 200V drain to source voltage (Vdss)
IXTK110N20L2 Applications
There are a lot of IXYS
IXTK110N20L2 applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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