IXTK140N30P
- Mfr.Part #
- IXTK140N30P
- Manufacturer
- Littelfuse
- Package / Case
- TO-264-3, TO-264AA
- Datasheet
- Download
- Description
- MOSFET N-CH 300V 140A TO264
- Stock
- 17
- In Stock :
- 17
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Power Dissipation (Max) :
- --
- Operating Temperature :
- --
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Brand :
- IXYS
- Series :
- Polar™
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Number of Elements :
- 1
- Gate to Source Voltage (Vgs) :
- 20V
- Product Status :
- Active
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Case Connection :
- DRAIN
- Terminal Position :
- Single
- Channel Mode :
- Enhancement
- Base Product Number :
- IXTK140
- Transistor Application :
- SWITCHING
- Pulsed Drain Current-Max (IDM) :
- 300 A
- Width :
- 5.13 mm
- Manufacturer :
- IXYS
- Minimum Operating Temperature :
- - 55 C
- FET Type :
- N-Channel
- Mount :
- Through Hole
- Number of Channels :
- 1 Channel
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Number of Terminations :
- 3
- Product Category :
- MOSFET
- Supplier Device Package :
- TO-264 (IXTK)
- JEDEC-95 Code :
- TO-264AA
- Terminal Form :
- THROUGH-HOLE
- Mounting Style :
- Through Hole
- Package :
- Bulk
- Length :
- 19.96 mm
- Pbfree Code :
- yes
- Drain Current-Max (Abs) (ID) :
- 140 A
- Package / Case :
- TO-264-3, TO-264AA
- Power Dissipation :
- 1.04kW
- Rise Time :
- 30 ns
- Drain-source On Resistance-Max :
- 0.024Ohm
- Continuous Drain Current (ID) :
- 140A
- Transistor Element Material :
- SILICON
- ECCN Code :
- EAR99
- Vgs (Max) :
- ±20V
- Drain to Source Voltage (Vdss) :
- 300V
- Package Shape :
- RECTANGULAR
- Input Capacitance (Ciss) (Max) @ Vds :
- 14800pF @ 25V
- Height :
- 26.16 mm
- Avalanche Energy Rating (Eas) :
- 5000 mJ
- FET Feature :
- --
- Mounting Type :
- Through Hole
- Operating Mode :
- ENHANCEMENT MODE
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Max Operating Temperature :
- 150°C
- JESD-609 Code :
- e1
- Gate Charge (Qg) (Max) @ Vgs :
- 185nC @ 10V
- Rds On (Max) @ Id, Vgs :
- 24m Ω @ 70A, 10V
- Surface Mount :
- No
- Reach Compliance Code :
- Compliant
- Published :
- 2006
- Current - Continuous Drain (Id) @ 25°C :
- 140A Tc
- Number of Terminals :
- 3
- Transistor Type :
- 1 N-Channel
- RoHS Status :
- ROHS3 Compliant
- Pin Count :
- 3
- Qualification Status :
- Not Qualified
- Max Power Dissipation :
- 1.04kW
- Packaging :
- Bulk
- Tradename :
- Polar
- Additional Feature :
- AVALANCHE RATED
- Vgs(th) (Max) @ Id :
- 5V @ 500µA
- Min Operating Temperature :
- -55°C
- Number of Pins :
- 3
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Type :
- Polar Power MOSFET
- Product Type :
- MOSFET
- JESD-30 Code :
- R-PSFM-T3
- Transistor Polarity :
- N-Channel
- Power Dissipation-Max (Abs) :
- 1040 W
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- DS Breakdown Voltage-Min :
- 300 V
- Factory Lead Time :
- 28 Weeks
- Maximum Operating Temperature :
- + 150 C
- RoHS :
- Details
- Polarity/Channel Type :
- N-Channel
- Datasheets
- IXTK140N30P

N-Channel Bulk 24m Ω @ 70A, 10V ±20V 14800pF @ 25V 185nC @ 10V 300V TO-264-3, TO-264AA
IXTK140N30P Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 5000 mJ.A device's maximal input capacitance is 14800pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 140A, which represents the maximum continuous current it can conduct.In this device, the drain current is 140 A, which is the maximum continuous current the device can conduct.In terms of pulsed drain current, it has a maximum of 300 A, which is its maximum rated peak drain current.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.To maintain normal operation, it is recommended that the DS breakdown voltage be above 300 V.This transistor requires a 300V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
IXTK140N30P Features
the avalanche energy rating (Eas) is 5000 mJ
a continuous drain current (ID) of 140A
based on its rated peak drain current 300 A.
a 300V drain to source voltage (Vdss)
IXTK140N30P Applications
There are a lot of IXYS
IXTK140N30P applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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