IXTK140N30P

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Mfr.Part #
IXTK140N30P
Manufacturer
Littelfuse
Package / Case
TO-264-3, TO-264AA
Datasheet
Download
Description
MOSFET N-CH 300V 140A TO264
Stock
17
In Stock :
17

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Pbfree Code :
yes
Mount :
Through Hole
Polarity/Channel Type :
N-Channel
Package / Case :
TO-264-3, TO-264AA
Operating Temperature :
--
Package :
Bulk
Channel Mode :
Enhancement
JESD-30 Code :
R-PSFM-T3
JESD-609 Code :
e1
Brand :
IXYS
Transistor Element Material :
SILICON
Package Shape :
RECTANGULAR
Packaging :
Bulk
Drive Voltage (Max Rds On,Min Rds On) :
10V
Rise Time :
30 ns
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Current - Continuous Drain (Id) @ 25°C :
140A Tc
Avalanche Energy Rating (Eas) :
5000 mJ
DS Breakdown Voltage-Min :
300 V
FET Type :
N-Channel
Minimum Operating Temperature :
- 55 C
Product Type :
MOSFET
Gate Charge (Qg) (Max) @ Vgs :
185nC @ 10V
Number of Pins :
3
Number of Terminations :
3
Length :
19.96 mm
Number of Channels :
1 Channel
Terminal Position :
Single
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Product Status :
Active
Type :
Polar Power MOSFET
JEDEC-95 Code :
TO-264AA
Drain to Source Voltage (Vdss) :
300V
Qualification Status :
Not Qualified
Drain Current-Max (Abs) (ID) :
140 A
RoHS :
Details
Tradename :
Polar
Operating Mode :
ENHANCEMENT MODE
Mounting Type :
Through Hole
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
ECCN Code :
EAR99
Transistor Application :
SWITCHING
Configuration :
SINGLE WITH BUILT-IN DIODE
Factory Lead Time :
28 Weeks
Maximum Operating Temperature :
+ 150 C
Surface Mount :
No
Manufacturer :
IXYS
Max Operating Temperature :
150°C
Transistor Polarity :
N-Channel
Series :
Polar™
RoHS Status :
ROHS3 Compliant
Pin Count :
3
Drain-source On Resistance-Max :
0.024Ohm
Vgs(th) (Max) @ Id :
5V @ 500µA
Rds On (Max) @ Id, Vgs :
24m Ω @ 70A, 10V
Supplier Device Package :
TO-264 (IXTK)
Power Dissipation (Max) :
--
Power Dissipation-Max (Abs) :
1040 W
Width :
5.13 mm
Input Capacitance (Ciss) (Max) @ Vds :
14800pF @ 25V
Reach Compliance Code :
Compliant
Max Power Dissipation :
1.04kW
Height :
26.16 mm
Mounting Style :
Through Hole
Product Category :
MOSFET
Case Connection :
DRAIN
Gate to Source Voltage (Vgs) :
20V
Transistor Type :
1 N-Channel
Number of Terminals :
3
Min Operating Temperature :
-55°C
Base Product Number :
IXTK140
Vgs (Max) :
±20V
Power Dissipation :
1.04kW
Published :
2006
Pulsed Drain Current-Max (IDM) :
300 A
Continuous Drain Current (ID) :
140A
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Number of Elements :
1
Additional Feature :
AVALANCHE RATED
FET Feature :
--
Terminal Form :
THROUGH-HOLE
Datasheets
IXTK140N30P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTK140N30P from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-264-3, TO-264AA, Operating Temperature:--, Number of Pins:3, Number of Terminations:3, Number of Channels:1 Channel, Type:Polar Power MOSFET, Mounting Type:Through Hole, IXTK140N30P pinout, IXTK140N30P datasheet PDF, IXTK140N30P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTK140N30P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTK140N30P


N-Channel Bulk 24m Ω @ 70A, 10V ±20V 14800pF @ 25V 185nC @ 10V 300V TO-264-3, TO-264AA

IXTK140N30P Overview


Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 5000 mJ.A device's maximal input capacitance is 14800pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 140A, which represents the maximum continuous current it can conduct.In this device, the drain current is 140 A, which is the maximum continuous current the device can conduct.In terms of pulsed drain current, it has a maximum of 300 A, which is its maximum rated peak drain current.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.To maintain normal operation, it is recommended that the DS breakdown voltage be above 300 V.This transistor requires a 300V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).

IXTK140N30P Features


the avalanche energy rating (Eas) is 5000 mJ
a continuous drain current (ID) of 140A
based on its rated peak drain current 300 A.
a 300V drain to source voltage (Vdss)


IXTK140N30P Applications


There are a lot of IXYS
IXTK140N30P applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
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