IXTK140N30P
- Mfr.Part #
- IXTK140N30P
- Manufacturer
- Littelfuse
- Package / Case
- TO-264-3, TO-264AA
- Datasheet
- Download
- Description
- MOSFET N-CH 300V 140A TO264
- Stock
- 17
- In Stock :
- 17
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- JESD-609 Code :
- e1
- Drain to Source Voltage (Vdss) :
- 300V
- JEDEC-95 Code :
- TO-264AA
- Minimum Operating Temperature :
- - 55 C
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Maximum Operating Temperature :
- + 150 C
- Pulsed Drain Current-Max (IDM) :
- 300 A
- Channel Mode :
- Enhancement
- Reach Compliance Code :
- Compliant
- Pin Count :
- 3
- Vgs(th) (Max) @ Id :
- 5V @ 500µA
- Power Dissipation :
- 1.04kW
- Qualification Status :
- Not Qualified
- Supplier Device Package :
- TO-264 (IXTK)
- Drain-source On Resistance-Max :
- 0.024Ohm
- Factory Lead Time :
- 28 Weeks
- Mount :
- Through Hole
- Rise Time :
- 30 ns
- Base Product Number :
- IXTK140
- Transistor Type :
- 1 N-Channel
- Transistor Application :
- SWITCHING
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- FET Feature :
- --
- Number of Terminals :
- 3
- Drain Current-Max (Abs) (ID) :
- 140 A
- Current - Continuous Drain (Id) @ 25°C :
- 140A Tc
- Manufacturer :
- IXYS
- Tradename :
- Polar
- Operating Temperature :
- --
- JESD-30 Code :
- R-PSFM-T3
- Series :
- Polar™
- Product Category :
- MOSFET
- Avalanche Energy Rating (Eas) :
- 5000 mJ
- Continuous Drain Current (ID) :
- 140A
- Pbfree Code :
- yes
- Product Type :
- MOSFET
- Polarity/Channel Type :
- N-Channel
- Case Connection :
- DRAIN
- ECCN Code :
- EAR99
- Width :
- 5.13 mm
- Product Status :
- Active
- Published :
- 2006
- Terminal Position :
- Single
- RoHS :
- Details
- Packaging :
- Bulk
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Number of Channels :
- 1 Channel
- Mounting Type :
- Through Hole
- Height :
- 26.16 mm
- Terminal Form :
- THROUGH-HOLE
- Transistor Polarity :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 185nC @ 10V
- Number of Pins :
- 3
- Gate to Source Voltage (Vgs) :
- 20V
- Mounting Style :
- Through Hole
- Max Operating Temperature :
- 150°C
- Number of Terminations :
- 3
- Vgs (Max) :
- ±20V
- DS Breakdown Voltage-Min :
- 300 V
- Operating Mode :
- ENHANCEMENT MODE
- Package Shape :
- RECTANGULAR
- Length :
- 19.96 mm
- FET Type :
- N-Channel
- Surface Mount :
- No
- Package / Case :
- TO-264-3, TO-264AA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation (Max) :
- --
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Power Dissipation-Max (Abs) :
- 1040 W
- Transistor Element Material :
- SILICON
- Additional Feature :
- AVALANCHE RATED
- RoHS Status :
- ROHS3 Compliant
- Number of Elements :
- 1
- Max Power Dissipation :
- 1.04kW
- Package :
- Bulk
- Brand :
- IXYS
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Rds On (Max) @ Id, Vgs :
- 24m Ω @ 70A, 10V
- Type :
- Polar Power MOSFET
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Input Capacitance (Ciss) (Max) @ Vds :
- 14800pF @ 25V
- Min Operating Temperature :
- -55°C
- Datasheets
- IXTK140N30P

N-Channel Bulk 24m Ω @ 70A, 10V ±20V 14800pF @ 25V 185nC @ 10V 300V TO-264-3, TO-264AA
IXTK140N30P Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 5000 mJ.A device's maximal input capacitance is 14800pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 140A, which represents the maximum continuous current it can conduct.In this device, the drain current is 140 A, which is the maximum continuous current the device can conduct.In terms of pulsed drain current, it has a maximum of 300 A, which is its maximum rated peak drain current.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.To maintain normal operation, it is recommended that the DS breakdown voltage be above 300 V.This transistor requires a 300V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
IXTK140N30P Features
the avalanche energy rating (Eas) is 5000 mJ
a continuous drain current (ID) of 140A
based on its rated peak drain current 300 A.
a 300V drain to source voltage (Vdss)
IXTK140N30P Applications
There are a lot of IXYS
IXTK140N30P applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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