IXTK140N30P

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Mfr.Part #
IXTK140N30P
Manufacturer
Littelfuse
Package / Case
TO-264-3, TO-264AA
Datasheet
Download
Description
MOSFET N-CH 300V 140A TO264
Stock
17
In Stock :
17

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Maximum Operating Temperature :
+ 150 C
Package / Case :
TO-264-3, TO-264AA
Manufacturer :
IXYS
Max Power Dissipation :
1.04kW
Case Connection :
DRAIN
Transistor Type :
1 N-Channel
Mounting Style :
Through Hole
Drive Voltage (Max Rds On,Min Rds On) :
10V
JESD-30 Code :
R-PSFM-T3
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Gate to Source Voltage (Vgs) :
20V
Avalanche Energy Rating (Eas) :
5000 mJ
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Number of Terminals :
3
Transistor Polarity :
N-Channel
RoHS Status :
ROHS3 Compliant
Reach Compliance Code :
Compliant
Vgs (Max) :
±20V
Power Dissipation (Max) :
--
Polarity/Channel Type :
N-Channel
Rds On (Max) @ Id, Vgs :
24m Ω @ 70A, 10V
Brand :
IXYS
Transistor Application :
SWITCHING
FET Feature :
--
Configuration :
SINGLE WITH BUILT-IN DIODE
Input Capacitance (Ciss) (Max) @ Vds :
14800pF @ 25V
Number of Channels :
1 Channel
Minimum Operating Temperature :
- 55 C
Tradename :
Polar
Package :
Bulk
Number of Terminations :
3
Product Status :
Active
DS Breakdown Voltage-Min :
300 V
FET Type :
N-Channel
Terminal Position :
Single
Packaging :
Bulk
JEDEC-95 Code :
TO-264AA
Channel Mode :
Enhancement
Power Dissipation :
1.04kW
Rise Time :
30 ns
Min Operating Temperature :
-55°C
Height :
26.16 mm
Additional Feature :
AVALANCHE RATED
Max Operating Temperature :
150°C
Terminal Form :
THROUGH-HOLE
Pin Count :
3
Continuous Drain Current (ID) :
140A
Gate Charge (Qg) (Max) @ Vgs :
185nC @ 10V
Product Type :
MOSFET
Series :
Polar™
Factory Lead Time :
28 Weeks
Product Category :
MOSFET
Pbfree Code :
yes
RoHS :
Details
Surface Mount :
No
Operating Mode :
ENHANCEMENT MODE
Vgs(th) (Max) @ Id :
5V @ 500µA
ECCN Code :
EAR99
Package Shape :
RECTANGULAR
Qualification Status :
Not Qualified
Mount :
Through Hole
Drain to Source Voltage (Vdss) :
300V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Power Dissipation-Max (Abs) :
1040 W
Published :
2006
Type :
Polar Power MOSFET
Drain-source On Resistance-Max :
0.024Ohm
Supplier Device Package :
TO-264 (IXTK)
JESD-609 Code :
e1
Pulsed Drain Current-Max (IDM) :
300 A
Transistor Element Material :
SILICON
Drain Current-Max (Abs) (ID) :
140 A
Number of Pins :
3
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Width :
5.13 mm
Operating Temperature :
--
Base Product Number :
IXTK140
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Current - Continuous Drain (Id) @ 25°C :
140A Tc
Number of Elements :
1
Length :
19.96 mm
Mounting Type :
Through Hole
Datasheets
IXTK140N30P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTK140N30P from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-264-3, TO-264AA, Number of Channels:1 Channel, Number of Terminations:3, Type:Polar Power MOSFET, Number of Pins:3, Operating Temperature:--, Mounting Type:Through Hole, IXTK140N30P pinout, IXTK140N30P datasheet PDF, IXTK140N30P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTK140N30P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTK140N30P


N-Channel Bulk 24m Ω @ 70A, 10V ±20V 14800pF @ 25V 185nC @ 10V 300V TO-264-3, TO-264AA

IXTK140N30P Overview


Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 5000 mJ.A device's maximal input capacitance is 14800pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 140A, which represents the maximum continuous current it can conduct.In this device, the drain current is 140 A, which is the maximum continuous current the device can conduct.In terms of pulsed drain current, it has a maximum of 300 A, which is its maximum rated peak drain current.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.To maintain normal operation, it is recommended that the DS breakdown voltage be above 300 V.This transistor requires a 300V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).

IXTK140N30P Features


the avalanche energy rating (Eas) is 5000 mJ
a continuous drain current (ID) of 140A
based on its rated peak drain current 300 A.
a 300V drain to source voltage (Vdss)


IXTK140N30P Applications


There are a lot of IXYS
IXTK140N30P applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
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