IXTK140N30P

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Mfr.Part #
IXTK140N30P
Manufacturer
Littelfuse
Package / Case
TO-264-3, TO-264AA
Datasheet
Download
Description
MOSFET N-CH 300V 140A TO264
Stock
17
In Stock :
17

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
JESD-609 Code :
e1
Drain to Source Voltage (Vdss) :
300V
JEDEC-95 Code :
TO-264AA
Minimum Operating Temperature :
- 55 C
Drive Voltage (Max Rds On,Min Rds On) :
10V
Maximum Operating Temperature :
+ 150 C
Pulsed Drain Current-Max (IDM) :
300 A
Channel Mode :
Enhancement
Reach Compliance Code :
Compliant
Pin Count :
3
Vgs(th) (Max) @ Id :
5V @ 500µA
Power Dissipation :
1.04kW
Qualification Status :
Not Qualified
Supplier Device Package :
TO-264 (IXTK)
Drain-source On Resistance-Max :
0.024Ohm
Factory Lead Time :
28 Weeks
Mount :
Through Hole
Rise Time :
30 ns
Base Product Number :
IXTK140
Transistor Type :
1 N-Channel
Transistor Application :
SWITCHING
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
FET Feature :
--
Number of Terminals :
3
Drain Current-Max (Abs) (ID) :
140 A
Current - Continuous Drain (Id) @ 25°C :
140A Tc
Manufacturer :
IXYS
Tradename :
Polar
Operating Temperature :
--
JESD-30 Code :
R-PSFM-T3
Series :
Polar™
Product Category :
MOSFET
Avalanche Energy Rating (Eas) :
5000 mJ
Continuous Drain Current (ID) :
140A
Pbfree Code :
yes
Product Type :
MOSFET
Polarity/Channel Type :
N-Channel
Case Connection :
DRAIN
ECCN Code :
EAR99
Width :
5.13 mm
Product Status :
Active
Published :
2006
Terminal Position :
Single
RoHS :
Details
Packaging :
Bulk
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Number of Channels :
1 Channel
Mounting Type :
Through Hole
Height :
26.16 mm
Terminal Form :
THROUGH-HOLE
Transistor Polarity :
N-Channel
Gate Charge (Qg) (Max) @ Vgs :
185nC @ 10V
Number of Pins :
3
Gate to Source Voltage (Vgs) :
20V
Mounting Style :
Through Hole
Max Operating Temperature :
150°C
Number of Terminations :
3
Vgs (Max) :
±20V
DS Breakdown Voltage-Min :
300 V
Operating Mode :
ENHANCEMENT MODE
Package Shape :
RECTANGULAR
Length :
19.96 mm
FET Type :
N-Channel
Surface Mount :
No
Package / Case :
TO-264-3, TO-264AA
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Power Dissipation (Max) :
--
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Power Dissipation-Max (Abs) :
1040 W
Transistor Element Material :
SILICON
Additional Feature :
AVALANCHE RATED
RoHS Status :
ROHS3 Compliant
Number of Elements :
1
Max Power Dissipation :
1.04kW
Package :
Bulk
Brand :
IXYS
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Rds On (Max) @ Id, Vgs :
24m Ω @ 70A, 10V
Type :
Polar Power MOSFET
Configuration :
SINGLE WITH BUILT-IN DIODE
Input Capacitance (Ciss) (Max) @ Vds :
14800pF @ 25V
Min Operating Temperature :
-55°C
Datasheets
IXTK140N30P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTK140N30P from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:--, Number of Channels:1 Channel, Mounting Type:Through Hole, Number of Pins:3, Number of Terminations:3, Package / Case:TO-264-3, TO-264AA, Type:Polar Power MOSFET, IXTK140N30P pinout, IXTK140N30P datasheet PDF, IXTK140N30P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTK140N30P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTK140N30P


N-Channel Bulk 24m Ω @ 70A, 10V ±20V 14800pF @ 25V 185nC @ 10V 300V TO-264-3, TO-264AA

IXTK140N30P Overview


Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 5000 mJ.A device's maximal input capacitance is 14800pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 140A, which represents the maximum continuous current it can conduct.In this device, the drain current is 140 A, which is the maximum continuous current the device can conduct.In terms of pulsed drain current, it has a maximum of 300 A, which is its maximum rated peak drain current.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.To maintain normal operation, it is recommended that the DS breakdown voltage be above 300 V.This transistor requires a 300V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).

IXTK140N30P Features


the avalanche energy rating (Eas) is 5000 mJ
a continuous drain current (ID) of 140A
based on its rated peak drain current 300 A.
a 300V drain to source voltage (Vdss)


IXTK140N30P Applications


There are a lot of IXYS
IXTK140N30P applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
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