IXTK120N20P

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Mfr.Part #
IXTK120N20P
Manufacturer
Littelfuse
Package / Case
TO-264-3, TO-264AA
Datasheet
Download
Description
MOSFET N-CH 200V 120A TO264
Stock
34,128
In Stock :
34,128

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Transistor Type :
1 N-Channel
Fall Time (Typ) :
31 ns
JESD-609 Code :
e1
ECCN Code :
EAR99
Package / Case :
TO-264-3, TO-264AA
Turn-Off Delay Time :
100 ns
Series :
PolarHT™
RoHS Status :
ROHS3 Compliant
Qualification Status :
Not Qualified
Configuration :
Single
Packaging :
Tube
Subcategory :
MOSFETs
Manufacturer :
IXYS
Minimum Operating Temperature :
- 55 C
Power Dissipation (Max) :
714W (Tc)
Lead Free :
Lead Free
Tradename :
PolarHT
Surface Mount :
No
Terminal Form :
THROUGH-HOLE
Terminal Position :
Single
FET Type :
N-Channel
JEDEC-95 Code :
TO-264AA
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Package :
Tube
Length :
19.96 mm
Element Configuration :
Single
Published :
2006
Mounting Style :
Through Hole
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Operating Temperature :
-55°C~175°C TJ
Drain-source On Resistance-Max :
0.022Ohm
Case Connection :
DRAIN
Drain to Source Voltage (Vdss) :
200V
Transistor Element Material :
SILICON
Reach Compliance Code :
Compliant
Number of Elements :
1
Number of Channels :
1 Channel
Package Shape :
RECTANGULAR
Operating Mode :
ENHANCEMENT MODE
Channel Mode :
Enhancement
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Width :
5.13 mm
Rds On (Max) @ Id, Vgs :
22m Ω @ 500mA, 10V
Mount :
Through Hole
Input Capacitance (Ciss) (Max) @ Vds :
6000pF @ 25V
Product Status :
Active
Power Dissipation-Max :
714W Tc
Avalanche Energy Rating (Eas) :
2000 mJ
Gate to Source Voltage (Vgs) :
20V
Pbfree Code :
yes
Current - Continuous Drain (Id) @ 25°C :
120A Tc
Transistor Application :
SWITCHING
Polarity/Channel Type :
N-Channel
Gate Charge (Qg) (Max) @ Vgs :
152nC @ 10V
Pulsed Drain Current-Max (IDM) :
300A
Continuous Drain Current (ID) :
120A
Maximum Operating Temperature :
+ 175 C
Mounting Type :
Through Hole
DS Breakdown Voltage-Min :
200 V
Transistor Polarity :
N-Channel
FET Feature :
--
Drive Voltage (Max Rds On,Min Rds On) :
10V
Pin Count :
3
Product Type :
MOSFET
Vgs(th) (Max) @ Id :
5V @ 250μA
Drain to Source Breakdown Voltage :
200V
Type :
PolarHT Power MOSFET
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
JESD-30 Code :
R-PSFM-T3
Base Product Number :
IXTK120
Power Dissipation :
714W
Brand :
IXYS
Rise Time :
35ns
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Height :
26.16 mm
Number of Terminals :
3
Product Category :
MOSFET
Number of Terminations :
3
Supplier Device Package :
TO-264 (IXTK)
Additional Feature :
AVALANCHE RATED
Vgs (Max) :
±20V
RoHS :
Details
Factory Lead Time :
28 Weeks
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTK120N20P from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-264-3, TO-264AA, Operating Temperature:-55°C~175°C TJ, Number of Channels:1 Channel, Mounting Type:Through Hole, Type:PolarHT Power MOSFET, Number of Terminations:3, IXTK120N20P pinout, IXTK120N20P datasheet PDF, IXTK120N20P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTK120N20P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTK120N20P


N-Channel Tube 22m Ω @ 500mA, 10V ±20V 6000pF @ 25V 152nC @ 10V 200V TO-264-3, TO-264AA

IXTK120N20P Overview


There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 2000 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 6000pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 120A amps.In this device, the drain-source breakdown voltage is 200V and VGS=200V, so the drain-source breakdown voltage is 200V in this case.It is [100 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 300A.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.The DS breakdown voltage should be maintained above 200 V to maintain normal operation.To operate this transistor, you will need a 200V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).

IXTK120N20P Features


the avalanche energy rating (Eas) is 2000 mJ
a continuous drain current (ID) of 120A
a drain-to-source breakdown voltage of 200V voltage
the turn-off delay time is 100 ns
based on its rated peak drain current 300A.
a 200V drain to source voltage (Vdss)


IXTK120N20P Applications


There are a lot of IXYS
IXTK120N20P applications of single MOSFETs transistors.


  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
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