IXTK120N20P
- Mfr.Part #
- IXTK120N20P
- Manufacturer
- Littelfuse
- Package / Case
- TO-264-3, TO-264AA
- Datasheet
- Download
- Description
- MOSFET N-CH 200V 120A TO264
- Stock
- 34,128
- In Stock :
- 34,128
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Channels :
- 1 Channel
- Lead Free :
- Lead Free
- Number of Elements :
- 1
- Manufacturer :
- IXYS
- Configuration :
- Single
- JEDEC-95 Code :
- TO-264AA
- Product Category :
- MOSFET
- Package / Case :
- TO-264-3, TO-264AA
- Supplier Device Package :
- TO-264 (IXTK)
- Type :
- PolarHT Power MOSFET
- Number of Terminations :
- 3
- Mount :
- Through Hole
- ECCN Code :
- EAR99
- Mounting Style :
- Through Hole
- Drain to Source Breakdown Voltage :
- 200V
- Length :
- 19.96 mm
- Base Product Number :
- IXTK120
- Surface Mount :
- No
- Power Dissipation-Max :
- 714W Tc
- Vgs (Max) :
- ±20V
- Fall Time (Typ) :
- 31 ns
- Transistor Polarity :
- N-Channel
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Tradename :
- PolarHT
- Published :
- 2006
- Additional Feature :
- AVALANCHE RATED
- Number of Terminals :
- 3
- Drain-source On Resistance-Max :
- 0.022Ohm
- JESD-609 Code :
- e1
- Terminal Position :
- Single
- Package :
- Tube
- Turn-Off Delay Time :
- 100 ns
- Power Dissipation :
- 714W
- Power Dissipation (Max) :
- 714W (Tc)
- Reach Compliance Code :
- Compliant
- DS Breakdown Voltage-Min :
- 200 V
- Polarity/Channel Type :
- N-Channel
- Transistor Type :
- 1 N-Channel
- Drain to Source Voltage (Vdss) :
- 200V
- Maximum Operating Temperature :
- + 175 C
- Transistor Element Material :
- SILICON
- Product Status :
- Active
- Rds On (Max) @ Id, Vgs :
- 22m Ω @ 500mA, 10V
- JESD-30 Code :
- R-PSFM-T3
- Mounting Type :
- Through Hole
- Element Configuration :
- Single
- Factory Lead Time :
- 28 Weeks
- Packaging :
- Tube
- Height :
- 26.16 mm
- Width :
- 5.13 mm
- Qualification Status :
- Not Qualified
- Pulsed Drain Current-Max (IDM) :
- 300A
- Pbfree Code :
- yes
- Package Shape :
- RECTANGULAR
- Gate to Source Voltage (Vgs) :
- 20V
- Channel Mode :
- Enhancement
- Case Connection :
- DRAIN
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Application :
- SWITCHING
- Brand :
- IXYS
- Gate Charge (Qg) (Max) @ Vgs :
- 152nC @ 10V
- Avalanche Energy Rating (Eas) :
- 2000 mJ
- Continuous Drain Current (ID) :
- 120A
- RoHS Status :
- ROHS3 Compliant
- RoHS :
- Details
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Terminal Form :
- THROUGH-HOLE
- Operating Mode :
- ENHANCEMENT MODE
- Current - Continuous Drain (Id) @ 25°C :
- 120A Tc
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Minimum Operating Temperature :
- - 55 C
- Input Capacitance (Ciss) (Max) @ Vds :
- 6000pF @ 25V
- Product Type :
- MOSFET
- FET Feature :
- --
- Rise Time :
- 35ns
- Subcategory :
- MOSFETs
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Pin Count :
- 3
- Series :
- PolarHT™
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Operating Temperature :
- -55°C~175°C TJ
- FET Type :
- N-Channel
- Datasheets
- IXTK120N20P
IXTK120N20P Documents

N-Channel Tube 22m Ω @ 500mA, 10V ±20V 6000pF @ 25V 152nC @ 10V 200V TO-264-3, TO-264AA
IXTK120N20P Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 2000 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 6000pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 120A amps.In this device, the drain-source breakdown voltage is 200V and VGS=200V, so the drain-source breakdown voltage is 200V in this case.It is [100 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 300A.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.The DS breakdown voltage should be maintained above 200 V to maintain normal operation.To operate this transistor, you will need a 200V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).
IXTK120N20P Features
the avalanche energy rating (Eas) is 2000 mJ
a continuous drain current (ID) of 120A
a drain-to-source breakdown voltage of 200V voltage
the turn-off delay time is 100 ns
based on its rated peak drain current 300A.
a 200V drain to source voltage (Vdss)
IXTK120N20P Applications
There are a lot of IXYS
IXTK120N20P applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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