IXTK120N20P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

-55°C~175°C TJ

Operating Mode :

ENHANCEMENT MODE

Type :

PolarHT Power MOSFET

FET Type :

N-Channel

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Manufacturer :

IXYS

Case Connection :

DRAIN

Product Type :

MOSFET

Terminal Form :

THROUGH-HOLE

Drain to Source Voltage (Vdss) :

200V

Transistor Polarity :

N-Channel

RoHS Status :

ROHS3 Compliant

Packaging :

Tube

Rise Time :

35ns

Polarity/Channel Type :

N-Channel

Number of Terminations :

3

Supplier Device Package :

TO-264 (IXTK)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

10V

ECCN Code :

EAR99

FET Feature :

--

Input Capacitance (Ciss) (Max) @ Vds :

6000pF @ 25V

Minimum Operating Temperature :

- 55 C

Lead Free :

Lead Free

Current - Continuous Drain (Id) @ 25°C :

120A Tc

Published :

2006

Pbfree Code :

yes

Number of Channels :

1 Channel

Continuous Drain Current (ID) :

120A

JEDEC-95 Code :

TO-264AA

Subcategory :

MOSFETs

Pin Count :

3

Gate Charge (Qg) (Max) @ Vgs :

152nC @ 10V

Mounting Type :

Through Hole

Height :

26.16 mm

Surface Mount :

No

Terminal Position :

Single

JESD-30 Code :

R-PSFM-T3

Length :

19.96 mm

Transistor Application :

SWITCHING

Fall Time (Typ) :

31 ns

Drain to Source Breakdown Voltage :

200V

RoHS :

Details

Factory Lead Time :

28 Weeks

Configuration :

Single

Mount :

Through Hole

Tradename :

PolarHT

Package Shape :

RECTANGULAR

Reach Compliance Code :

Compliant

Drain-source On Resistance-Max :

0.022Ohm

Number of Terminals :

3

Maximum Operating Temperature :

+ 175 C

Base Product Number :

IXTK120

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Product Status :

Active

Gate to Source Voltage (Vgs) :

20V

Package / Case :

TO-264-3, TO-264AA

Avalanche Energy Rating (Eas) :

2000 mJ

Qualification Status :

Not Qualified

Power Dissipation-Max :

714W Tc

Turn-Off Delay Time :

100 ns

Rds On (Max) @ Id, Vgs :

22m Ω @ 500mA, 10V

Package :

Tube

Vgs(th) (Max) @ Id :

5V @ 250μA

Additional Feature :

AVALANCHE RATED

Series :

PolarHT™

Power Dissipation (Max) :

714W (Tc)

Power Dissipation :

714W

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Number of Elements :

1

Transistor Element Material :

SILICON

Brand :

IXYS

Channel Mode :

Enhancement

Transistor Type :

1 N-Channel

Pulsed Drain Current-Max (IDM) :

300A

Vgs (Max) :

±20V

Mounting Style :

Through Hole

JESD-609 Code :

e1

DS Breakdown Voltage-Min :

200 V

Product Category :

MOSFET

Width :

5.13 mm

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Element Configuration :

Single