IXTK120N20P
- Mfr.Part #
- IXTK120N20P
- Manufacturer
- Littelfuse
- Package / Case
- TO-264-3, TO-264AA
- Datasheet
- Download
- Description
- MOSFET N-CH 200V 120A TO264
- Stock
- 34,128
- In Stock :
- 34,128
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Rise Time :
- 35ns
- Transistor Element Material :
- SILICON
- Package Shape :
- RECTANGULAR
- Supplier Device Package :
- TO-264 (IXTK)
- FET Type :
- N-Channel
- Case Connection :
- DRAIN
- Manufacturer :
- IXYS
- Channel Mode :
- Enhancement
- Element Configuration :
- Single
- Product Status :
- Active
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Package / Case :
- TO-264-3, TO-264AA
- Gate to Source Voltage (Vgs) :
- 20V
- Input Capacitance (Ciss) (Max) @ Vds :
- 6000pF @ 25V
- JESD-30 Code :
- R-PSFM-T3
- Subcategory :
- MOSFETs
- Number of Channels :
- 1 Channel
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- RoHS :
- Details
- JESD-609 Code :
- e1
- Power Dissipation (Max) :
- 714W (Tc)
- Operating Mode :
- ENHANCEMENT MODE
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Polarity/Channel Type :
- N-Channel
- Configuration :
- Single
- Terminal Position :
- Single
- Published :
- 2006
- Pulsed Drain Current-Max (IDM) :
- 300A
- JEDEC-95 Code :
- TO-264AA
- RoHS Status :
- ROHS3 Compliant
- Avalanche Energy Rating (Eas) :
- 2000 mJ
- Gate Charge (Qg) (Max) @ Vgs :
- 152nC @ 10V
- Drain to Source Voltage (Vdss) :
- 200V
- Tradename :
- PolarHT
- Series :
- PolarHT™
- Additional Feature :
- AVALANCHE RATED
- Qualification Status :
- Not Qualified
- Vgs (Max) :
- ±20V
- Transistor Type :
- 1 N-Channel
- Lead Free :
- Lead Free
- Pin Count :
- 3
- Mounting Style :
- Through Hole
- Packaging :
- Tube
- Reach Compliance Code :
- Compliant
- Pbfree Code :
- yes
- Drain to Source Breakdown Voltage :
- 200V
- Maximum Operating Temperature :
- + 175 C
- Power Dissipation :
- 714W
- Surface Mount :
- No
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Product Category :
- MOSFET
- Product Type :
- MOSFET
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Factory Lead Time :
- 28 Weeks
- Height :
- 26.16 mm
- Continuous Drain Current (ID) :
- 120A
- Length :
- 19.96 mm
- ECCN Code :
- EAR99
- Brand :
- IXYS
- Transistor Polarity :
- N-Channel
- Rds On (Max) @ Id, Vgs :
- 22m Ω @ 500mA, 10V
- Mounting Type :
- Through Hole
- Package :
- Tube
- FET Feature :
- --
- Current - Continuous Drain (Id) @ 25°C :
- 120A Tc
- Mount :
- Through Hole
- Number of Terminals :
- 3
- Operating Temperature :
- -55°C~175°C TJ
- Drain-source On Resistance-Max :
- 0.022Ohm
- Number of Terminations :
- 3
- Terminal Form :
- THROUGH-HOLE
- Minimum Operating Temperature :
- - 55 C
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Number of Elements :
- 1
- Turn-Off Delay Time :
- 100 ns
- Base Product Number :
- IXTK120
- Transistor Application :
- SWITCHING
- Type :
- PolarHT Power MOSFET
- Width :
- 5.13 mm
- Power Dissipation-Max :
- 714W Tc
- Fall Time (Typ) :
- 31 ns
- DS Breakdown Voltage-Min :
- 200 V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Datasheets
- IXTK120N20P
IXTK120N20P Documents

N-Channel Tube 22m Ω @ 500mA, 10V ±20V 6000pF @ 25V 152nC @ 10V 200V TO-264-3, TO-264AA
IXTK120N20P Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 2000 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 6000pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 120A amps.In this device, the drain-source breakdown voltage is 200V and VGS=200V, so the drain-source breakdown voltage is 200V in this case.It is [100 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 300A.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.The DS breakdown voltage should be maintained above 200 V to maintain normal operation.To operate this transistor, you will need a 200V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).
IXTK120N20P Features
the avalanche energy rating (Eas) is 2000 mJ
a continuous drain current (ID) of 120A
a drain-to-source breakdown voltage of 200V voltage
the turn-off delay time is 100 ns
based on its rated peak drain current 300A.
a 200V drain to source voltage (Vdss)
IXTK120N20P Applications
There are a lot of IXYS
IXTK120N20P applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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