IXTK170N10P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

JESD-30 Code :

R-PSFM-T3

Pulsed Drain Current-Max (IDM) :

350A

Power Dissipation (Max) :

715W (Tc)

JEDEC-95 Code :

TO-264AA

Mount :

Through Hole

RoHS Status :

ROHS3 Compliant

Power Dissipation-Max (Abs) :

715 W

Package :

Tube

Maximum Operating Temperature :

+ 175 C

Drive Voltage (Max Rds On,Min Rds On) :

10V

Fall Time (Typ) :

33 ns

Rds On Max :

9 mΩ

Power Dissipation :

714W

Drain-source On Resistance-Max :

0.009Ohm

Channel Mode :

Enhancement

Transistor Type :

1 N-Channel

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Supplier Device Package :

TO-264 (IXTK)

Qualification Status :

Not Qualified

Brand :

IXYS

Min Operating Temperature :

-55 °C

Manufacturer :

IXYS

DS Breakdown Voltage-Min :

100 V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Height :

26.59 mm

Turn-Off Delay Time :

90 ns

Surface Mount :

No

Operating Mode :

ENHANCEMENT MODE

Package / Case :

TO-264-3, TO-264AA

Lead Free :

Lead Free

Transistor Element Material :

SILICON

Pin Count :

3

RoHS :

Details

Drain Current-Max (Abs) (ID) :

170 A

Rds On (Max) @ Id, Vgs :

9m Ω @ 500mA, 10V

Number of Terminations :

3

Packaging :

Tube

FET Type :

N-Channel

Reach Compliance Code :

Unknown

FET Feature :

-

Number of Elements :

1

Polarity/Channel Type :

N-Channel

Width :

5.31 mm

Product Status :

Active

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Max Operating Temperature :

175 °C

Continuous Drain Current (ID) :

170A

Product Type :

MOSFET

Factory Lead Time :

28 Weeks

Element Configuration :

Single

Transistor Polarity :

N-Channel

Mounting Style :

Through Hole

Drain to Source Breakdown Voltage :

100V

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

5V @ 250μA

Mounting Type :

Through Hole

ECCN Code :

EAR99

Avalanche Energy Rating (Eas) :

2000 mJ

Package Shape :

RECTANGULAR

Input Capacitance :

6 nF

Terminal Form :

THROUGH-HOLE

Configuration :

Single

Rise Time :

50ns

Base Product Number :

IXTK170

Current - Continuous Drain (Id) @ 25°C :

170A Tc

Transistor Application :

SWITCHING

Drain to Source Resistance :

9 mΩ

Number of Terminals :

3

JESD-609 Code :

e1

Pbfree Code :

yes

Length :

20.29 mm

Additional Feature :

AVALANCHE RATED

Max Power Dissipation :

714 W

Gate to Source Voltage (Vgs) :

20V

Series :

Polar™

Gate Charge (Qg) (Max) @ Vgs :

198nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

6000pF @ 25V

Published :

2010

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Operating Temperature :

-55°C~175°C TJ

Drain to Source Voltage (Vdss) :

100V

Product Category :

MOSFET

Power Dissipation-Max :

715W Tc

Minimum Operating Temperature :

- 55 C

Number of Channels :

1 Channel

Case Connection :

DRAIN

Terminal Position :

Single