IXTK110N30

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-30 Code :

R-PSFM-T3

Drain to Source Resistance :

26 mΩ

ECCN Code :

EAR99

Transistor Type :

1 N-Channel

Drain to Source Voltage (Vdss) :

300V

Number of Channels :

1 Channel

Package / Case :

TO-264-3, TO-264AA

Brand :

IXYS

Product Type :

MOSFET

Maximum Operating Temperature :

+ 150 C

DS Breakdown Voltage-Min :

300 V

Number of Pins :

3

Fall Time (Typ) :

30 ns

Mounting Type :

Through Hole

Mount :

Through Hole

Surface Mount :

No

Case Connection :

DRAIN

Rds On Max :

26 mΩ

JEDEC-95 Code :

TO-264AA

Gate to Source Voltage (Vgs) :

20V

Max Operating Temperature :

150 °C

Product Category :

MOSFET

Published :

2003

RoHS :

Compliant

Pbfree Code :

yes

Pin Count :

3

Packaging :

Tube

Pulsed Drain Current-Max (IDM) :

440A

Operating Mode :

ENHANCEMENT MODE

Power Dissipation (Max) :

730W (Tc)

Series :

MegaMOS™

Transistor Element Material :

SILICON

Input Capacitance :

7.8 nF

Reach Compliance Code :

Unknown

Element Configuration :

Single

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Power Dissipation :

730W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Terminal Position :

Single

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Terminal Form :

THROUGH-HOLE

Subcategory :

MOSFETs

Vgs (Max) :

±20V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

RoHS Status :

ROHS3 Compliant

Number of Terminations :

3

Power Dissipation-Max :

730W Tc

FET Feature :

--

Length :

19.96 mm

Operating Temperature :

-55°C~150°C TJ

Supplier Device Package :

TO-264 (IXTK)

Continuous Drain Current (ID) :

110A

Qualification Status :

Not Qualified

Current - Continuous Drain (Id) @ 25°C :

110A Tc

Configuration :

Single

Base Product Number :

IXTK110

Input Capacitance (Ciss) (Max) @ Vds :

7800pF @ 25V

Package Shape :

RECTANGULAR

Number of Elements :

1

Min Operating Temperature :

-55 °C

Number of Terminals :

3

FET Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain-source On Resistance-Max :

0.026ohm

Mounting Style :

Through Hole

Rds On (Max) @ Id, Vgs :

26m Ω @ 500mA, 10V

Channel Mode :

Enhancement

Avalanche Energy Rating (Eas) :

4000 mJ

Max Power Dissipation :

730 W

Transistor Polarity :

N-Channel

Vgs(th) (Max) @ Id :

4V @ 250µA

Polarity/Channel Type :

N-Channel

Package :

Tube

Turn-Off Delay Time :

110 ns

Height :

26.16 mm

Product Status :

Active

Manufacturer :

IXYS

Gate Charge (Qg) (Max) @ Vgs :

390nC @ 10V

Rise Time :

40ns

Width :

5.13 mm

Drain to Source Breakdown Voltage :

300V

Minimum Operating Temperature :

- 55 C